Multilayer varistor
    1.
    发明授权

    公开(公告)号:US12224090B2

    公开(公告)日:2025-02-11

    申请号:US17796143

    申请日:2021-12-17

    Abstract: A multilayer varistor has a stack structure including a plurality of layers stacked in a third direction. The multilayer varistor includes a first internal electrode electrically connected to a first external electrode, a second internal electrode electrically connected to the second external electrode, and a third internal electrode electrically connected to the third external electrode. The first internal electrode is disposed between the second internal electrode and the third internal electrode in the third direction.

    Stacked varistor
    2.
    发明授权

    公开(公告)号:US12183491B2

    公开(公告)日:2024-12-31

    申请号:US17907267

    申请日:2021-03-18

    Abstract: A stacked varistor having a small variation in electrostatic capacitance is obtained. The stacked varistor includes first internal electrode projection extending from third internal electrode toward first end surface between first side surface and first varistor region, and second internal electrode projection extending from third internal electrode toward second end surface between first side surface and second varistor region. First internal electrode projection extends closer to first end surface than a line connecting point closest to first end surface of first varistor region and point closest to first end surface of third external electrode is. Second internal electrode projection extends closer to second end surface than a line connecting point closest to second end surface of second varistor region and point closest to second end surface of third external electrode is.

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