-
公开(公告)号：US20210202582A1
公开(公告)日：2021-07-01
申请号：US17205061
申请日：2021-03-18
Inventor： KATSUYA NOZAWA , TAKEYOSHI TOKUHARA , NOZOMU MATSUKAWA , SANSHIRO SHISHIDO
Abstract: An imaging device includes: a semiconductor substrate; pixel electrodes located above the semiconductor substrate and each electrically connected to the semiconductor substrate; a counter electrode located above the pixel electrodes; a first photoelectric conversion layer located between the counter electrode and the pixel electrodes; and at least one first light-shielding body located in or above the first photoelectric conversion layer. The first photoelectric conversion layer contains a semiconducting carbon nanotube that absorbs light in a first wavelength range and an organic molecule that covers the semiconducting carbon nanotube, absorbs light in a second wavelength range, and emits fluorescence in a third wavelength range. The at least one first light-shielding body absorbs or reflects light with a wavelength in at least part of the second wavelength range.
-
公开(公告)号：US20240381677A1
公开(公告)日：2024-11-14
申请号：US18782984
申请日：2024-07-24
Inventor： SHINICHI MACHIDA , SANSHIRO SHISHIDO , NOZOMU MATSUKAWA
Abstract: A photoelectric conversion element includes a photoelectric conversion layer, a first electrode that collects holes produced in the photoelectric conversion layer as signal charges, and a second electrode that collects electrons produced in the photoelectric conversion layer. The photoelectric conversion layer includes three or more layered quantum dot layers, each containing quantum dots and surface-modifying ligands. The band gap energy of the quantum dot layer closer to the first electrode is lower than the band gap energy of the quantum dot layer closer to the second electrode in at least one combination of two adjacent quantum dot layers. At the interface between each of the three or more quantum dot layers and an adjacent quantum dot layer, at least one selected from the group consisting of Expression (1) and Expression (2) below is satisfied: E i + 1 CBM - E i CBM ≥ 0 ( 1 ) E i + 1 VBM - E i VBM ≥ 0. ( 2 )
-
3.发明公开公开(公告)号：US20240065013A1
公开(公告)日：2024-02-22
申请号：US18500534
申请日：2023-11-02
Inventor： NOZOMU MATSUKAWA , SHINICHI MACHIDA
CPC classification number: H10K39/32 , H10K30/35 , H10K30/353 , H10K30/87 , H10K85/221 , B82Y20/00
Abstract: A photoelectric conversion element includes a first electrode, a second electrode facing the first electrode, and a photosensitive layer between the first electrode and the second electrode. At least one selected from the group consisting of the first electrode and the second electrode transmits light. The photosensitive layer contains a quantum dot and a semiconducting carbon nanotube that absorbs the light. The quantum dot has a higher absolute value of electron affinity than the semiconducting carbon nanotube.
-
Patent Agency Ranking
公开(公告)号：US20210225939A1
公开(公告)日：2021-07-22
申请号：US17219954
申请日：2021-04-01
Inventor： KATSUYA NOZAWA , TAKEYOSHI TOKUHARA , NOZOMU MATSUKAWA , SANSHIRO SHISHIDO
Abstract: An imaging device includes a pixel electrode, a counter electrode that faces the pixel electrode, a first photoelectric conversion layer that is located between the pixel electrode and the counter electrode and that generates first signal charge, a second photoelectric conversion layer that is located between the first photoelectric conversion layer and the pixel electrode and that generates second signal charge, a first barrier layer that is located between the first photoelectric conversion layer and the second photoelectric conversion layer and that forms a first heterojunction barrier against the first signal charge in the first photoelectric conversion layer, and a charge accumulator that is electrically connected to the pixel electrode and that accumulates the first signal charge and the second signal charge.
-
公开(公告)号：US20180331293A1
公开(公告)日：2018-11-15
申请号：US15961975
申请日：2018-04-25
Inventor： KAZUNORI HAYASHIDA , NOZOMU MATSUKAWA , KATSUYA NOZAWA
IPC: H01L51/00
CPC classification number: H01L51/0025 , H01L51/0007 , H01L51/0046 , H01L51/0048 , H01L51/424
Abstract: A method for producing the photoelectric conversion element includes, in carbon nanotubes including semiconducting carbon nanotubes having different chiralities from each other and metallic carbon nanotubes, changing a chirality distribution in the semiconducting carbon nanotubes, separating the carbon nanotubes into the semiconducting carbon nanotubes and the metallic carbon nanotubes after changing the chirality distribution, covering the semiconducting carbon nanotubes with a polymer after performing separating, and forming a photoelectric conversion film including the semiconducting carbon nanotubes between a pair of electrodes after performing covering with the polymer.
-
公开(公告)号：US20240049490A1
公开(公告)日：2024-02-08
申请号：US18490823
申请日：2023-10-20
Inventor： SHINICHI MACHIDA , NOZOMU MATSUKAWA , FUMIYA SANO
CPC classification number: H10K39/32 , C09K11/664 , C09K11/025 , B82Y20/00
Abstract: A photoelectric conversion element includes a photoelectric conversion layer, a first electrode that collects holes generated in the photoelectric conversion layer, and a second electrode that is positioned opposite to the first electrode with the photoelectric conversion layer being disposed therebetween and that collects electrons generated in the photoelectric conversion layer. The photoelectric conversion layer includes a first quantum dot layer including first quantum dots each having a surface modified with a first ligand and includes a second quantum dot layer including second quantum dots each having a surface modified with a second ligand different from the first ligand. The second quantum dot layer has an ionization potential greater than an ionization potential of the first quantum dot layer. A second value that represents a particle diameter distribution of the second quantum dots is less than a first value that represents a particle diameter distribution of the first quantum dots.
-
公开(公告)号：US20220336745A1
公开(公告)日：2022-10-20
申请号：US17809026
申请日：2022-06-27
Inventor： NOZOMU MATSUKAWA , KATSUYA NOZAWA , SHINICHI MACHIDA , SANSHIRO SHISHIDO
Abstract: An organic device includes at least one electrode, an insulating layer adjacent to the at least one electrode in a plan view, and an organic layer that is continuously in contact with an upper surface of the at least one electrode and an upper surface of the insulating layer. The organic layer contains a polymer of an organic material. The organic material contains a basic molecular skeleton and a polymerizable functional group. In the polymer, the organic material is polymerized through the polymerizable functional group.
-
公开(公告)号：US20210202551A1
公开(公告)日：2021-07-01
申请号：US17204851
申请日：2021-03-17
Inventor： KATSUYA NOZAWA , TAKEYOSHI TOKUHARA , NOZOMU MATSUKAWA , SANSHIRO SHISHIDO
IPC: H01L27/146
Abstract: An imaging device includes a pixel electrode, a counter electrode, a first quantum dot that includes a first core which generates first signal charge and a first shell, a second quantum dot that includes a second core which generates second signal charge and a second shell. In a case where the potential difference between the pixel electrode and the counter electrode is a first potential difference, the first signal charge does not pass through the first shell and is held in the first core and the second signal charge passes through the second shell and is collected by the pixel electrode. In a case where the potential difference between the pixel electrode and the counter electrode is a second potential difference which is larger than the first potential difference, the first signal charge passes through the first shell and is collected by the pixel electrode.
-
-
-
-
-
-
-
Search Results
8
records
(took 0.019 seconds)
