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公开(公告)号：US20250130277A1
公开(公告)日：2025-04-24
申请号：US19001675
申请日：2024-12-26
Inventor： SHINICHI MACHIDA , SANSHIRO SHISHIDO
Abstract: An inspection method includes: preparing a device that includes a plurality of pixel electrodes, a counter electrode disposed to face the plurality of pixel electrodes, a photoelectric conversion layer disposed between the plurality of pixel electrodes and the counter electrode, a test electrode disposed to face the counter electrode with the photoelectric conversion layer interposed between the counter electrode and the test electrode, a first electrode pad electrically connected to the counter electrode and exposed to an outside of the device, and a second electrode pad electrically connected to the test electrode and exposed to the outside of the device, the test electrode being disposed between two adjacent pixel electrodes of the plurality of pixel electrodes; and measuring a current that flows between the first electrode pad and the second electrode pad by applying a voltage between the first electrode pad and the second electrode pad.
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公开(公告)号：US20240137669A1
公开(公告)日：2024-04-25
申请号：US18403554
申请日：2024-01-03
Inventor： SANSHIRO SHISHIDO
IPC: H04N25/76 , H01L27/146 , H04N25/79
CPC classification number: H04N25/76 , H01L27/14612 , H04N25/79
Abstract: An imaging device including first and second substrate; first and second connection portion electrically connecting the first and second substrate; a first and second pixel; and a common signal line for the first and second pixel. Each of the first and second pixels includes: a photoelectric converter that converts incident light into a signal charge, and a first transistor that outputs a signal corresponding to the signal charge to the common signal line. The first substrate includes the photoelectric converter and first transistor of the first and second pixels. The second substrate includes: a first line transmitting a voltage to the first transistor of the first and second pixel, and a voltage source coupled to the first transistor of the first pixel, via the first line and the first connection portion, and coupled to the first transistor of the second pixel, via the first line and the second connection portion.
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公开(公告)号：US20220217294A1
公开(公告)日：2022-07-07
申请号：US17705224
申请日：2022-03-25
Inventor： SANSHIRO SHISHIDO , YUUKO TOMEKAWA , SHINICHI MACHIDA , TAKANORI DOI
Abstract: An imaging device includes: a first pixel array including a first photoelectric converter and first pixel electrodes connected to the first photoelectric converter; and a second pixel array including a second photoelectric converter and second pixel electrodes connected to the second photoelectric converter. The first pixel array and the second pixel array are stacked one on another. In a plan view, an area of an overlapping region defined by overlapping between the first pixel electrodes and a corresponding second pixel electrode of the second pixel electrodes is smaller than an area of a remaining region obtained by excluding the overlapping region from the corresponding second pixel electrode.
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公开(公告)号：US20210313399A1
公开(公告)日：2021-10-07
申请号：US17347460
申请日：2021-06-14
Inventor： SANSHIRO SHISHIDO , TAKAHIRO KOYANAGI , YUUKO TOMEKAWA , SHINICHI MACHIDA
Abstract: An imaging device includes a first pixel and a second pixel adjacent to the first pixel. Each of the first pixel and the second pixel includes a first electrode, a second electrode positioned on or above the first electrode and facing the first electrode, a photoelectric conversion layer positioned between the first electrode and the second electrode, and a first charge-blocking layer positioned between the first electrode and the photoelectric conversion layer. The first charge-blocking layer of the first pixel is separated from the first charge-blocking layer of the second pixel. The photoelectric conversion layer is disposed continuously to the first pixel and the second pixel. An area of the first charge-blocking layer of the first pixel is larger than an area of the first electrode of the first pixel in plan view.
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公开(公告)号：US20210202582A1
公开(公告)日：2021-07-01
申请号：US17205061
申请日：2021-03-18
Inventor： KATSUYA NOZAWA , TAKEYOSHI TOKUHARA , NOZOMU MATSUKAWA , SANSHIRO SHISHIDO
Abstract: An imaging device includes: a semiconductor substrate; pixel electrodes located above the semiconductor substrate and each electrically connected to the semiconductor substrate; a counter electrode located above the pixel electrodes; a first photoelectric conversion layer located between the counter electrode and the pixel electrodes; and at least one first light-shielding body located in or above the first photoelectric conversion layer. The first photoelectric conversion layer contains a semiconducting carbon nanotube that absorbs light in a first wavelength range and an organic molecule that covers the semiconducting carbon nanotube, absorbs light in a second wavelength range, and emits fluorescence in a third wavelength range. The at least one first light-shielding body absorbs or reflects light with a wavelength in at least part of the second wavelength range.
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Patent Agency Ranking
6.发明申请公开(公告)号：US20180227524A1
公开(公告)日：2018-08-09
申请号：US15872016
申请日：2018-01-16
Inventor： SHINICHI MACHIDA , TAKEYOSHI TOKUHARA , MANABU NAKATA , SANSHIRO SHISHIDO , MASAAKI YANAGIDA , MASUMI IZUCHI
CPC classification number: H04N5/378 , H01L27/307 , H01L51/0046 , H01L51/4246 , H04N5/374 , Y02E10/549
Abstract: An imaging apparatus includes a unit pixel including a pixel electrode, a charge accumulation region electrically connected to the pixel electrode, and a signal detection circuit electrically connected to the charge accumulation region; a counter electrode facing the pixel electrode; a photoelectric conversion layer disposed between the electrodes; and a voltage supply circuit configured to selectively apply any one of first, second, and third voltages between the electrodes. The photoelectric conversion layer exhibits first and second wavelength sensitivity characteristics in a wavelength range when the voltage supply circuit applies the first and second voltages between the electrodes, respectively, and becomes insensitive to light in the wavelength range when the voltage supply circuit applies the third voltage between the electrodes.
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公开(公告)号：US20180205896A1
公开(公告)日：2018-07-19
申请号：US15867986
申请日：2018-01-11
Inventor： KAZUKO NISHIMURA , SANSHIRO SHISHIDO , HIDENARI KANEHARA , TAKAYOSHI YAMADA , MASASHI MURAKAMI , YASUNORI INOUE
CPC classification number: H04N5/35518 , H01L27/14643 , H01L27/14665 , H01L29/42372 , H04N5/355 , H04N5/35563 , H04N5/363 , H04N5/378
Abstract: An imaging device includes: a first imaging cell including a first photoelectric converter that generates a first signal by photoelectric conversion, and a first signal processing circuit that is electrically connected to the first photoelectric converter and detects the first signal; and a second imaging cell including a second photoelectric converter that generates a second signal by photoelectric conversion, and a second signal processing circuit that is electrically connected to the second photoelectric converter and detects the second signal. Sensitivity of the first imaging cell is higher than sensitivity of the second imaging cell. The first signal processing circuit has a circuit configuration different from the second signal processing circuit. An operation frequency of the first signal processing circuit is different from an operation frequency of the second signal processing circuit.
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公开(公告)号：US20240381677A1
公开(公告)日：2024-11-14
申请号：US18782984
申请日：2024-07-24
Inventor： SHINICHI MACHIDA , SANSHIRO SHISHIDO , NOZOMU MATSUKAWA
Abstract: A photoelectric conversion element includes a photoelectric conversion layer, a first electrode that collects holes produced in the photoelectric conversion layer as signal charges, and a second electrode that collects electrons produced in the photoelectric conversion layer. The photoelectric conversion layer includes three or more layered quantum dot layers, each containing quantum dots and surface-modifying ligands. The band gap energy of the quantum dot layer closer to the first electrode is lower than the band gap energy of the quantum dot layer closer to the second electrode in at least one combination of two adjacent quantum dot layers. At the interface between each of the three or more quantum dot layers and an adjacent quantum dot layer, at least one selected from the group consisting of Expression (1) and Expression (2) below is satisfied: E i + 1 CBM - E i CBM ≥ 0 ( 1 ) E i + 1 VBM - E i VBM ≥ 0. ( 2 )
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公开(公告)号：US20220303482A1
公开(公告)日：2022-09-22
申请号：US17832301
申请日：2022-06-03
Inventor： SANSHIRO SHISHIDO
IPC: H04N5/374 , H04N5/369 , H01L27/146
Abstract: An imaging device includes a first substrate, and a second substrate stacked on the first substrate. A first connection portion and a second connection portion are between the first substrate and the second substrate. A first pixel and a second pixel each include a photoelectric converter that converts incident light into a signal charge, and a detection circuit that detects the signal charge. The first substrate includes the photoelectric converter and the detection circuit. The second substrate includes a first line, and a voltage source that is coupled to the detection circuit of the first pixel, via the first line and the first connection portion, and that is coupled to the detection circuit of the second pixel, via the first line and the second connection portion.
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公开(公告)号：US20210043689A1
公开(公告)日：2021-02-11
申请号：US17083376
申请日：2020-10-29
Inventor： TAKEYOSHI TOKUHARA , SANSHIRO SHISHIDO , YASUO MIYAKE , SHINICHI MACHIDA
IPC: H01L27/30
Abstract: An imaging device includes a semiconductor substrate including a first surface receiving light from outside, and a second surface opposite to the first surface, a first transistor on the second surface, and a photoelectric converter facing the second surface and receiving light through the semiconductor substrate. The semiconductor substrate is a silicon or silicon compound substrate. The photoelectric converter includes a first electrode electrically connected to the first transistor, a second electrode, and a photoelectric conversion layer located between the first and second electrodes and containing a material absorbing light having a wavelength 1.1 μm or longer. The first electrode is located between the second surface and the photoelectric conversion layer. A spectral sensitivity of the material in a region of 1.0 μm or longer and shorter than 1.1 μm is 0% to 5% of the maximum value of a spectral sensitivity of the material in 1.1 μm or longer.
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