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公开(公告)号：US20250130277A1
公开(公告)日：2025-04-24
申请号：US19001675
申请日：2024-12-26
Inventor： SHINICHI MACHIDA , SANSHIRO SHISHIDO
Abstract: An inspection method includes: preparing a device that includes a plurality of pixel electrodes, a counter electrode disposed to face the plurality of pixel electrodes, a photoelectric conversion layer disposed between the plurality of pixel electrodes and the counter electrode, a test electrode disposed to face the counter electrode with the photoelectric conversion layer interposed between the counter electrode and the test electrode, a first electrode pad electrically connected to the counter electrode and exposed to an outside of the device, and a second electrode pad electrically connected to the test electrode and exposed to the outside of the device, the test electrode being disposed between two adjacent pixel electrodes of the plurality of pixel electrodes; and measuring a current that flows between the first electrode pad and the second electrode pad by applying a voltage between the first electrode pad and the second electrode pad.
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公开(公告)号：US20220217294A1
公开(公告)日：2022-07-07
申请号：US17705224
申请日：2022-03-25
Inventor： SANSHIRO SHISHIDO , YUUKO TOMEKAWA , SHINICHI MACHIDA , TAKANORI DOI
Abstract: An imaging device includes: a first pixel array including a first photoelectric converter and first pixel electrodes connected to the first photoelectric converter; and a second pixel array including a second photoelectric converter and second pixel electrodes connected to the second photoelectric converter. The first pixel array and the second pixel array are stacked one on another. In a plan view, an area of an overlapping region defined by overlapping between the first pixel electrodes and a corresponding second pixel electrode of the second pixel electrodes is smaller than an area of a remaining region obtained by excluding the overlapping region from the corresponding second pixel electrode.
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公开(公告)号：US20210313399A1
公开(公告)日：2021-10-07
申请号：US17347460
申请日：2021-06-14
Inventor： SANSHIRO SHISHIDO , TAKAHIRO KOYANAGI , YUUKO TOMEKAWA , SHINICHI MACHIDA
Abstract: An imaging device includes a first pixel and a second pixel adjacent to the first pixel. Each of the first pixel and the second pixel includes a first electrode, a second electrode positioned on or above the first electrode and facing the first electrode, a photoelectric conversion layer positioned between the first electrode and the second electrode, and a first charge-blocking layer positioned between the first electrode and the photoelectric conversion layer. The first charge-blocking layer of the first pixel is separated from the first charge-blocking layer of the second pixel. The photoelectric conversion layer is disposed continuously to the first pixel and the second pixel. An area of the first charge-blocking layer of the first pixel is larger than an area of the first electrode of the first pixel in plan view.
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4.发明申请公开(公告)号：US20180227524A1
公开(公告)日：2018-08-09
申请号：US15872016
申请日：2018-01-16
Inventor： SHINICHI MACHIDA , TAKEYOSHI TOKUHARA , MANABU NAKATA , SANSHIRO SHISHIDO , MASAAKI YANAGIDA , MASUMI IZUCHI
CPC classification number: H04N5/378 , H01L27/307 , H01L51/0046 , H01L51/4246 , H04N5/374 , Y02E10/549
Abstract: An imaging apparatus includes a unit pixel including a pixel electrode, a charge accumulation region electrically connected to the pixel electrode, and a signal detection circuit electrically connected to the charge accumulation region; a counter electrode facing the pixel electrode; a photoelectric conversion layer disposed between the electrodes; and a voltage supply circuit configured to selectively apply any one of first, second, and third voltages between the electrodes. The photoelectric conversion layer exhibits first and second wavelength sensitivity characteristics in a wavelength range when the voltage supply circuit applies the first and second voltages between the electrodes, respectively, and becomes insensitive to light in the wavelength range when the voltage supply circuit applies the third voltage between the electrodes.
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公开(公告)号：US20240389444A1
公开(公告)日：2024-11-21
申请号：US18784978
申请日：2024-07-26
Inventor： YOSHIKAZU YAMAOKA , SHINICHI MACHIDA , SANSHIRO SHISHIDO
Abstract: A method for manufacturing a functional element includes: preparing a substrate at an upper surface of which a first electrode and a second electrode are exposed; forming a first film above the substrate, the first film being provided with a gap where at least part of an upper surface of the first electrode is exposed; forming a second film on the first electrode, the second electrode, and the first film using a coating method; exposing the at least part of the upper surface of the first electrode by removing a portion of the second film that is on the first electrode; and forming an electric contact on the first electrode.
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Patent Agency Ranking
公开(公告)号：US20210202558A1
公开(公告)日：2021-07-01
申请号：US17185129
申请日：2021-02-25
Inventor： SANSHIRO SHISHIDO , SHINICHI MACHIDA , TAKEYOSHI TOKUHARA , KATSUYA NOZAWA
IPC: H01L27/146 , H01L31/0352 , H01L31/0384 , G02B5/20
Abstract: A light sensor includes a photoelectric conversion layer and a long-pass filter that is disposed above the photoelectric conversion layer. The photoelectric conversion layer has a spectral sensitivity characteristic having a first peak at a first wavelength that is longer than a cut-on wavelength of the long-pass filter, and a spectral sensitivity of the photoelectric conversion layer at the cut-on wavelength is greater than or equal to 0% and less than or equal to 50% of a spectral sensitivity of the photoelectric conversion layer at the first wavelength.
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公开(公告)号：US20200006436A1
公开(公告)日：2020-01-02
申请号：US16570012
申请日：2019-09-13
Inventor： TAKEYOSHI TOKUHARA , SHINICHI MACHIDA
Abstract: An imaging device includes a photoelectric converter including first and second electrodes, a photoelectric conversion layer therebetween, and a hole-blocking layer between the first electrode and the photoelectric conversion layer; and a signal detection circuit electrically connected to the first electrode. The hole-blocking material has an electron affinity lower than both a work function of the first conducting material and an electron affinity of the first photoelectric conversion material. The photoelectric conversion unit is applied with a voltage between the first and second electrodes, and responsive to the voltage within a range from a first voltage to a second voltage, shows that a density of current passing between the first and second electrodes when light is incident on the photoelectric conversion layer becomes substantially equal to that when no light is incident thereon. A difference between the first voltage and the second voltage is 0.5 V or more.
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公开(公告)号：US20180227490A1
公开(公告)日：2018-08-09
申请号：US15871978
申请日：2018-01-15
Inventor： MANABU NAKATA , SHINICHI MACHIDA , TAKEYOSHI TOKUHARA , SANSHIRO SHISHIDO , MASAAKI YANAGIDA , MASUMI IZUCHI
CPC classification number: H04N5/23245 , H01L27/307 , H04N5/2351 , H04N5/332 , H04N9/04553 , H04N9/07
Abstract: A method is for controlling an imaging device that allows switching of an operation mode between a first mode to perform imaging in a first imaging wavelength band and a second mode to perform imaging in a second imaging wavelength band different from the first imaging wavelength band. The method includes: determining whether ambient light includes near-infrared light based on information obtained in the first mode and information obtained in the second mode; and maintaining or changing the operation mode.
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公开(公告)号：US20240305881A1
公开(公告)日：2024-09-12
申请号：US18664343
申请日：2024-05-15
Inventor： SANSHIRO SHISHIDO , SHINICHI MACHIDA
IPC: H04N23/65 , H04N25/709 , H04N25/79
CPC classification number: H04N23/651 , H04N25/709 , H04N25/79
Abstract: A control method for an imaging element is a control method for an imaging element including a photoelectric converter and a peripheral circuit connected to the photoelectric converter. The control method for the imaging element includes receiving a predetermined input signal, and controlling the imaging element by switching between a normal imaging mode and a low power consumption mode based on the predetermined input signal. In the normal imaging mode, the imaging element is controlled to apply first voltage between the first electrode and the second electrode. In the low power consumption mode, the imaging element is controlled to apply second voltage between the first electrode and the second electrode and to stop part of operation of the peripheral circuit, the second voltage being larger than 0 V and smaller than the first voltage.
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公开(公告)号：US20240049490A1
公开(公告)日：2024-02-08
申请号：US18490823
申请日：2023-10-20
Inventor： SHINICHI MACHIDA , NOZOMU MATSUKAWA , FUMIYA SANO
CPC classification number: H10K39/32 , C09K11/664 , C09K11/025 , B82Y20/00
Abstract: A photoelectric conversion element includes a photoelectric conversion layer, a first electrode that collects holes generated in the photoelectric conversion layer, and a second electrode that is positioned opposite to the first electrode with the photoelectric conversion layer being disposed therebetween and that collects electrons generated in the photoelectric conversion layer. The photoelectric conversion layer includes a first quantum dot layer including first quantum dots each having a surface modified with a first ligand and includes a second quantum dot layer including second quantum dots each having a surface modified with a second ligand different from the first ligand. The second quantum dot layer has an ionization potential greater than an ionization potential of the first quantum dot layer. A second value that represents a particle diameter distribution of the second quantum dots is less than a first value that represents a particle diameter distribution of the first quantum dots.
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