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1.发明申请Array of Fet Transistors Having a Nanotube or Nanowire Semiconductor Element and Corresponding Electronic Device, For the Detection of Analytes 有权具有纳米管或纳米线半导体元件和对应电子器件的晶体管阵列，用于检测分析物公开(公告)号：US20080210987A1
公开(公告)日：2008-09-04
申请号：US11916161
申请日：2006-05-24
CPC分类号： G01N27/4146 , B82Y15/00 , Y10S977/92 , Y10S977/957
摘要： In an array R of field-effect transistors for detecting analytes, each transistor of the array comprises a gate G, a semiconductor nanotube or nanowire element NT connected at one end to a source electrode S and at another end to a drain electrode D, in order to form, at each end, a junction J1, J2 with the channel. At least transistors FET1,1, FET1,2 of the array are differentiated by a different conducting material (m1, m2) of the source electrode S and/or drain electrode D.
摘要翻译： 在用于检测分析物的场效应晶体管的阵列R中，阵列的每个晶体管包括栅极G，半导体纳米管或纳米线元件NT，其一端连接到源电极S，另一端连接到漏电极D， 为了在每一端形成与通道的连接点J 1，J 2 2。 阵列的至少晶体管FET1 / 2N，FET1,2 由不同的导电材料（m 1，m， > 2 源极电极S和/或漏电极D.
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2.发明授权Array of differentiated FETS having a nanotube or nanowire channel and corresponding electronic device, for the detection of analytes 有权具有纳米管或纳米线通道的差分FET的阵列和相应的电子器件，用于检测分析物公开(公告)号：US08115198B2
公开(公告)日：2012-02-14
申请号：US11916161
申请日：2006-05-24
CPC分类号： G01N27/4146 , B82Y15/00 , Y10S977/92 , Y10S977/957
摘要： In an array R of field-effect transistors for detecting analytes, each transistor of the array comprises a gate G, a semiconductor nanotube or nanowire element NT connected at one end to a source electrode S and at another end to a drain electrode D, in order to form, at each end, a junction J1, J2 with the channel. At least transistors FET1,1, FET1,2 of the array are differentiated by a different conducting material (m1, m2) of the source electrode S and/or drain electrode D.
摘要翻译： 在用于检测分析物的场效应晶体管的阵列R中，阵列的每个晶体管包括栅极G，半导体纳米管或纳米线元件NT，其一端连接到源电极S，另一端连接到漏电极D， 在每一端形成与通道的连接点J1，J2。 阵列的至少晶体管FET1,1，FET1,2由源电极S和/或漏电极D的不同导电材料（m1，m2）区分开。
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