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1.发明申请Array of Fet Transistors Having a Nanotube or Nanowire Semiconductor Element and Corresponding Electronic Device, For the Detection of Analytes 有权具有纳米管或纳米线半导体元件和对应电子器件的晶体管阵列，用于检测分析物公开(公告)号：US20080210987A1
公开(公告)日：2008-09-04
申请号：US11916161
申请日：2006-05-24
CPC分类号： G01N27/4146 , B82Y15/00 , Y10S977/92 , Y10S977/957
摘要： In an array R of field-effect transistors for detecting analytes, each transistor of the array comprises a gate G, a semiconductor nanotube or nanowire element NT connected at one end to a source electrode S and at another end to a drain electrode D, in order to form, at each end, a junction J1, J2 with the channel. At least transistors FET1,1, FET1,2 of the array are differentiated by a different conducting material (m1, m2) of the source electrode S and/or drain electrode D.
摘要翻译： 在用于检测分析物的场效应晶体管的阵列R中，阵列的每个晶体管包括栅极G，半导体纳米管或纳米线元件NT，其一端连接到源电极S，另一端连接到漏电极D， 为了在每一端形成与通道的连接点J 1，J 2 2。 阵列的至少晶体管FET1 / 2N，FET1,2 由不同的导电材料（m 1，m， > 2 源极电极S和/或漏电极D.
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2.发明授权Array of differentiated FETS having a nanotube or nanowire channel and corresponding electronic device, for the detection of analytes 有权具有纳米管或纳米线通道的差分FET的阵列和相应的电子器件，用于检测分析物公开(公告)号：US08115198B2
公开(公告)日：2012-02-14
申请号：US11916161
申请日：2006-05-24
CPC分类号： G01N27/4146 , B82Y15/00 , Y10S977/92 , Y10S977/957
摘要： In an array R of field-effect transistors for detecting analytes, each transistor of the array comprises a gate G, a semiconductor nanotube or nanowire element NT connected at one end to a source electrode S and at another end to a drain electrode D, in order to form, at each end, a junction J1, J2 with the channel. At least transistors FET1,1, FET1,2 of the array are differentiated by a different conducting material (m1, m2) of the source electrode S and/or drain electrode D.
摘要翻译： 在用于检测分析物的场效应晶体管的阵列R中，阵列的每个晶体管包括栅极G，半导体纳米管或纳米线元件NT，其一端连接到源电极S，另一端连接到漏电极D， 在每一端形成与通道的连接点J1，J2。 阵列的至少晶体管FET1,1，FET1,2由源电极S和/或漏电极D的不同导电材料（m1，m2）区分开。
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3.发明申请Method for catalytic growth of nanotubes or nanofibers comprising a nisi alloy diffusion barrier 有权包含nisi合金扩散阻挡层的纳米管或纳米纤维的催化生长方法公开(公告)号：US20050235906A1
公开(公告)日：2005-10-27
申请号：US10497079
申请日：2002-12-03
申请人： Pierre Legagneux , Didier Pribat , Yannig Nedellec , Pierre Legasneux , Didier Pribat , Yannig Nedellec
发明人： Pierre Legagneux , Didier Pribat , Yannig Nedellec , Pierre Legasneux , Didier Pribat , Yannig Nedellec
IPC分类号： C01B31/02 , C30B11/00 , C30B11/12 , D01F9/127 , C30B23/00 , C30B25/00 , C30B28/12 , C30B29/58
CPC分类号： B82Y30/00 , B82Y40/00 , C01B32/162 , C30B11/00 , C30B11/12 , C30B29/36 , C30B29/52 , C30B29/605 , D01F9/127
摘要： The invention relates to a process for the growth of nanotubes or nanofibers on a substrate comprising at least an upper layer made of a first material, wherein: the formation, on the surface of the upper layer, of a barrier layer made of an alloy of the first material and of a second material, said alloy being stable at a first temperature; the formation of spots of catalyst that are made of the second material, on the surface of the alloy layer; and the growth of nanotubes or nanofibers at a second temperature below said first temperature. The alloy layer allows effective growth of nanotubes/nanofibers from catalyst spots on the surface of said alloy layer. This is because the alloy layer constitutes a diffusion barrier preventing the catalyst from diffusing into the growth substrate, which barrier is stable at the catalytic nanotube/nanofiber growth temperature.
摘要翻译： 本发明涉及一种用于在基材上生长纳米管或纳米纤维的方法，该方法至少包括由第一材料制成的上层，其中：在上层的表面上形成由合金形成的阻挡层 所述第一材料和第二材料，所述合金在第一温度下是稳定的; 在合金层的表面上形成由第二材料制成的催化剂斑点; 以及在低于所述第一温度的第二温度下纳米管或纳米纤维的生长。 合金层允许纳米管/纳米纤维从所述合金层表面上的催化剂点有效生长。 这是因为合金层构成阻止催化剂扩散到生长衬底中的扩散阻挡层，该阻挡层在催化纳米管/纳米纤维生长温度下是稳定的。
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4.发明授权Method for catalytic growth of nanotubes or nanofibers comprising a NiSi alloy diffusion barrier 有权包含NiSi合金扩散阻挡层的纳米管或纳米纤维的催化生长方法公开(公告)号：US07491269B2
公开(公告)日：2009-02-17
申请号：US10497079
申请日：2002-12-03
申请人： Pierre Legagneux , Didier Pribat , Yannig Nedellec
发明人： Pierre Legagneux , Didier Pribat , Yannig Nedellec
IPC分类号： C30B29/62
CPC分类号： B82Y30/00 , B82Y40/00 , C01B32/162 , C30B11/00 , C30B11/12 , C30B29/36 , C30B29/52 , C30B29/605 , D01F9/127
摘要： The invention relates to a process for the growth of nanotubes or nanofibers on a substrate comprising at least an upper layer made of a first material, wherein: the formation, on the surface of the upper layer, of a barrier layer made of an alloy of the first material and of a second material, said alloy being stable at a first temperature; the formation of spots of catalyst that are made of the second material, on the surface of the alloy layer; and the growth of nanotubes or nanofibers at a second temperature below said first temperature. The alloy layer allows effective growth of nanotubes/nanofibers from catalyst spots on the surface of said alloy layer. This is because the alloy layer constitutes a diffusion barrier preventing the catalyst from diffusing into the growth substrate, which barrier is stable at the catalytic nanotube/nanofiber growth temperature.
摘要翻译： 本发明涉及一种用于在基材上生长纳米管或纳米纤维的方法，该方法至少包括由第一材料制成的上层，其中：在上层的表面上形成由合金形成的阻挡层 所述第一材料和第二材料，所述合金在第一温度下是稳定的; 在合金层的表面上形成由第二材料制成的催化剂斑点; 以及在低于所述第一温度的第二温度下纳米管或纳米纤维的生长。 合金层允许纳米管/纳米纤维从所述合金层表面上的催化剂点有效生长。 这是因为合金层构成阻止催化剂扩散到生长衬底中的扩散阻挡层，该阻挡层在催化纳米管/纳米纤维生长温度下是稳定的。
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5.发明授权Process for the localized growth of nanotubes and process for fabricating a self-aligned cathode using the nanotube growth process 有权纳米管局部生长工艺及使用纳米管生长工艺制造自对准阴极的工艺公开(公告)号：US07214553B2
公开(公告)日：2007-05-08
申请号：US10490300
申请日：2002-09-20
IPC分类号： H01L21/00
CPC分类号： B82Y30/00 , B82Y40/00 , C01B32/162 , H01J9/025
摘要： The invention relates to a process for the controlled growth of nanotubes or nanofibers on a substrate, characterized in that it furthermore comprises the production, on the substrate (11), of a bi-layer structure composed of a layer of catalyst material (71), for catalyzing the growth of nanotubes or nanofibers, and a layer of associated material, said associated material being such that it forms a noncatalytic alloy with the catalyst material at high temperature.The invention also relates to a process for fabricating a field-emission cathode using the above nanotube or nanofiber fabrication process.These processes allow very precise positioning of the catalyst spots from which the nanotubes and nanofibers can be grown and allow the fabrication of cathodes for which the nanotubes or nanofibers are self-aligned with the aperture in the extraction grid.Applications: electron tubes, nanolithography.
摘要翻译： 本发明涉及一种在衬底上控制纳米管或纳米纤维生长的方法，其特征在于，还包括在基底（11）上生产由催化剂材料层（71）构成的双层结构， ，用于催化纳米管或纳米纤维的生长以及相关材料层，所述相关材料使得其在高温下与催化剂材料形成非催化合金。 本发明还涉及使用上述纳米管或纳米纤维制造工艺制造场致发射阴极的方法。 这些方法允许催化剂斑点的非常精确的定位，从该纳米管和纳米纤维可以生长催化剂斑点，并允许制造其中纳米管或纳米纤维与提取网格中的孔自对准的阴极。 应用：电子管，纳米光刻。
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6.发明授权
公开(公告)号：US5262348A
公开(公告)日：1993-11-16
申请号：US769243
申请日：1991-10-01
IPC分类号： H01L21/205 , C30B25/18 , H01L21/20
CPC分类号： H01L21/02546 , C30B25/18 , H01L21/02381 , H01L21/0262 , H01L21/02645 , Y10S148/026 , Y10S438/933
摘要： Disclosed is a method for the growing of heteroepitaxial layers of monocrystalline semiconductor materials. To this end, on a substrate made of a material of a first type, there is made a seed of a second type of material. This seed is between a face of the substrate and a confinement layer which defines a confinement space with the face of the substrate. A vapor phase epitaxy of a material of the second type is then effected in the confinement space. This material of the second type grows from the seed in the confinement space. The method can be applied to the manufacture of heterogeneous semiconductor structures and to the three-dimensional integration of semiconductor components.
摘要翻译： 公开了用于生长单晶半导体材料的异质外延层的方法。 为此，在由第一种材料制成的基片上，制成第二类材料的种子。 该种子位于衬底的面和限定层之间，该限制层限定了与衬底的表面的限制空间。 然后在约束空间中实现第二类材料的气相外延。 第二种类型的材料从限制空间中的种子生长。 该方法可以应用于非均匀半导体结构的制造和半导体部件的三维集成。
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公开(公告)号：US5581146A
公开(公告)日：1996-12-03
申请号：US458821
申请日：1995-06-02
申请人： Didier Pribat , Binh V. Thien , Pierre Legagneux
发明人： Didier Pribat , Binh V. Thien , Pierre Legagneux
摘要： Electron source made notably in the form of a micropoint cathode electrode in which a microcathode is located in a cavity (CA) of a dielectric (3). A first gate electrode (VG1) surrounds the cavity (CA) and a second gate electrode (VG2) surrounds the first gate electrode (VG1). The different electrodes are carried to potentials such that the first gate electrode (VG1) acts as an extraction electrode and the second gate electrode acts as a focusing electrode.
摘要翻译： 特别是以微点阴极电极的形式形成的电子源，其中微电极位于电介质（3）的空腔（CA）中。 第一栅电极（VG1）包围空腔（CA），第二栅电极（VG2）围绕第一栅电极（VG1）。 不同的电极被携带到电位，使得第一栅电极（VG1）用作引出电极，第二栅电极用作聚焦电极。
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公开(公告)号：US06476408B1
公开(公告)日：2002-11-05
申请号：US09486693
申请日：2000-03-02
申请人： Pierre Legagneux , Didier Pribat
发明人： Pierre Legagneux , Didier Pribat
IPC分类号： H01L2912
CPC分类号： H01J1/3042
摘要： A field-emission device includes at least one plane cathode made of conductive material with a low electron affinity located on a face of a substrate carrying a layer of a dielectric material, which layer has at least one cavity in which the cathode is located. A gate made of conductive material is located on the dielectric layer and has an aperture centered with respect to the cavity. The conductive material with a low electron affinity is a material deposited in amorphous form. Such a device may find particular application to electron guns or display devices.
摘要翻译： 场致发射器件包括至少一个由具有低电子亲和力的导电材料构成的平面阴极，该平面阴极位于承载电介质材料层的衬底的表面上，该层具有至少一个阴极所在的空腔。 由导电材料制成的栅极位于电介质层上，并且具有相对于空腔中心的孔。 具有低电子亲和力的导电材料是以非晶形式沉积的材料。 这样的装置可以发现特别适用于电子枪或显示装置。
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公开(公告)号：US06356028B1
公开(公告)日：2002-03-12
申请号：US09485719
申请日：2000-03-02
申请人： Pierre Legagneux , Didier Pribat
发明人： Pierre Legagneux , Didier Pribat
IPC分类号： G09G322
CPC分类号： G09G3/22 , G09G2300/0842
摘要： A drive system which makes it possible to drive a matrix of picture elements, each including a cathode made of a material with low electron affinity. Each of crossover-point circuits include a switching device associated with a cathode of a picture element and makes it possible, with the aid of memory circuits, to connect the cathode to a current source during a time necessary for the driving of all the rows of the matrix and to regulate the current conduction of the corresponding picture element. Such a drive system may find particular application to electron guns and display screens.
摘要翻译： 驱动系统，其可以驱动像素矩阵，每个图像元素包括由具有低电子亲和力的材料制成的阴极。 交叉点电路中的每一个包括与图像元件的阴极相关联的开关器件，并且借助于存储器电路使得可以在驱动所有行的所需时间期间将阴极连接到电流源 矩阵并调节相应图像元素的电流传导。 这样的驱动系统可以发现电子枪和显示屏的特定应用。
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10.发明授权Method for the controlled growth of crystal whiskers and application thereof to the making of tip microcathodes 失效晶须的受控生长方法及其在尖端微电极的制备中的应用
公开(公告)号：US5314569A
公开(公告)日：1994-05-24
申请号：US995533
申请日：1992-12-22
CPC分类号： H01J9/025 , C30B11/12 , C30B23/007 , C30B25/005 , C30B29/06
摘要： A method of growth according to which a layer of a material having apertures is made on the surface of a substrate. A material is deposited in each aperture. When this material is liquid, it can absorb the material to be grown. Then, the growth is done in vapor phase. The material of the layer is chosen in such a way that there is neither growth nor nucleation on its surface during the growth in vapor phase. The disclosed method can be applied to the making of crystal whiskers positioned with precision, and to the making of tip type microcathodes.
摘要翻译： 一种生长方法，根据该方法在衬底的表面上形成具有孔的材料层。 材料沉积在每个孔中。 当这种材料是液体时，它可以吸收待生长的材料。 然后，生长在气相中进行。 选择层的材料是这样一种方式，即在气相生长过程中其表面上既没有生长也没有成核。 所公开的方法可以应用于准确定位的晶须的制备，以及尖端型微电极的制造。
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