公开(公告)号：US07150789B2

公开(公告)日：2006-12-19

申请号：US10208314

申请日：2002-07-29

申请人： Paul J. Castovillo ,  Cem Basceri ,  Garo J. Derderian ,  Gurtej S. Sandhu

发明人： Paul J. Castovillo ,  Cem Basceri ,  Garo J. Derderian ,  Gurtej S. Sandhu

IPC分类号： C30B23/00

CPC分类号： C30B25/14 ,  C23C14/0641 ,  C23C14/081 ,  C23C16/34 ,  C23C16/403 ,  C23C16/45527 ,  C23C16/45531

摘要： An atomic layer deposition method includes positioning a semiconductor substrate within an atomic layer deposition chamber. A first precursor gas is flowed to the substrate within the atomic layer deposition chamber effective to form a first monolayer on the substrate. After forming the first monolayer, a reactive intermediate gas is flowed to the substrate within the deposition chamber. The reactive intermediate gas is capable of reaction with an intermediate reaction by-product from the first precursor flowing under conditions of the reactive intermediate gas flowing. After flowing the reactive intermediate gas, a second precursor gas is flowed to the substrate within the deposition chamber effective to form a second monolayer on the first monolayer. Other aspects and implementations are contemplated.

摘要翻译： 原子层沉积方法包括将半导体衬底定位在原子层沉积室内。 第一前体气体流到原子层沉积室内的衬底，有效地在衬底上形成第一单层。 在形成第一单层之后，反应性中间气体流到沉积室内的衬底。 反应性中间体气体能够与在反应性中间体气体流动的条件下流动的第一前体的中间反应副产物反应。 在流动反应性中间气体之后，第二前体气体流到沉积室内的衬底，有效地在第一单层上形成第二单层。 考虑了其他方面和实现。

公开(公告)号：US07128787B2

公开(公告)日：2006-10-31

申请号：US10956925

申请日：2004-09-30

申请人： Paul J. Castovillo ,  Cem Basceri ,  Garo J. Derderian ,  Gurtej S. Sandhu

发明人： Paul J. Castovillo ,  Cem Basceri ,  Garo J. Derderian ,  Gurtej S. Sandhu

IPC分类号： C30B25/14 ,  C30B25/16

CPC分类号： C30B25/14 ,  C23C14/0641 ,  C23C14/081 ,  C23C16/34 ,  C23C16/403 ,  C23C16/45527 ,  C23C16/45531

摘要： An atomic layer deposition method includes positioning a semiconductor substrate within an atomic layer deposition chamber. A first precursor gas is flowed to the substrate within the atomic layer deposition chamber effective to form a first monolayer on the substrate. After forming the first monolayer, a reactive intermediate gas is flowed to the substrate within the deposition chamber. The reactive intermediate gas is capable of reaction with an intermediate reaction by-product from the first precursor flowing under conditions of the reactive intermediate gas flowing. After flowing the reactive intermediate gas, a second precursor gas is flowed to the substrate within the deposition chamber effective to form a second monolayer on the first monolayer. Other aspects and implementations are contemplated.

摘要翻译： 原子层沉积方法包括将半导体衬底定位在原子层沉积室内。 第一前体气体流到原子层沉积室内的衬底，有效地在衬底上形成第一单层。 在形成第一单层之后，反应性中间气体流到沉积室内的衬底。 反应性中间体气体能够与在反应性中间体气体流动的条件下流动的第一前体的中间反应副产物反应。 在流动反应性中间气体之后，第二前体气体流到沉积室内的衬底，有效地在第一单层上形成第二单层。 考虑了其他方面和实现。