公开(公告)号：US06603181B2

公开(公告)日：2003-08-05

申请号：US09760621

申请日：2001-01-16

申请人： Paul M. Solomon ,  Douglas A. Buchanan ,  Eduard A. Cartier ,  Kathryn W. Guarini ,  Fenton R. McFeely ,  Huiling Shang ,  John J. Yourkas

发明人： Paul M. Solomon ,  Douglas A. Buchanan ,  Eduard A. Cartier ,  Kathryn W. Guarini ,  Fenton R. McFeely ,  Huiling Shang ,  John J. Yourkas

IPC分类号： H01L2976

CPC分类号： H01L29/517 ,  H01L21/263 ,  H01L21/28079 ,  H01L29/495 ,  Y10S438/91

摘要： A MOS structure processed to have a semiconductor-dielectric interface that is passivated to reduce the interface state density. An example is a MOSFET having a gate dielectric on which an electrode is present that is substantially impervious to molecular hydrogen, but sufficiently thin to be pervious to atomic hydrogen, enabling atomic hydrogen to be diffused therethrough into an underlying semiconductor-dielectric interface. Atomic hydrogen diffusion can be achieved by subjecting such an electrode to hydrogen plasma, forming the electrode of an aluminum-tungsten alloy in the presence of hydrogen, and implanting atomic hydrogen into the electrode. The latter two techniques are each followed by an anneal to cause the atomic hydrogen to diffuse through the electrode and into the semiconductor-dielectric interface.

摘要翻译： 被处理成具有钝化的半导体 - 电介质界面以降低界面态密度的MOS结构。 一个例子是具有栅电介质的MOSFET，其上存在基本上不透分子氢的电极，但是足够薄以能够透过原子氢，使原子氢能够通过其扩散到下面的半导体介电界面中。 原子氢扩散可以通过使这样的电极经受氢等离子体，在氢的存在下形成铝 - 钨合金的电极，并将原子氢注入到电极中来实现。 后两种技术之后各自进行退火以使原子氢扩散通过电极并进入半导体 - 电介质界面。

公开(公告)号：US06803266B2

公开(公告)日：2004-10-12

申请号：US10249184

申请日：2003-03-20

申请人： Paul M. Solomon ,  Douglas A. Buchanan ,  Eduard A. Cartier ,  Kathryn W. Guarini ,  Fenton R. McFeely ,  Huiling Shang ,  John J. Yourkas

发明人： Paul M. Solomon ,  Douglas A. Buchanan ,  Eduard A. Cartier ,  Kathryn W. Guarini ,  Fenton R. McFeely ,  Huiling Shang ,  John J. Yourkas

IPC分类号： H01L21336

CPC分类号： H01L29/517 ,  H01L21/263 ,  H01L21/28079 ,  H01L29/495 ,  Y10S438/91

摘要： A process for passivating the semiconductor-dielectric interface of a MOS structure to reduce the interface state density to a very low level. A particular example is a MOSFET having a tungsten electrode that in the past has prevented passivation of the underlying semiconductor-dielectric interface to an extent sufficient to reduce the interface state density to less than 5×1010/cm2−eV. Though substantially impervious to molecular hydrogen, thin tungsten layers are shown to be pervious to atomic hydrogen, enabling atomic hydrogen to be diffused through a tungsten electrode into an underlying semiconductor-dielectric interface. Three general approaches are encompassed: forming an aluminum-tungsten electrode stack in the presence of hydrogen so as to store atomic hydrogen between the tungsten and aluminum layers, followed by an anneal to cause the atomic hydrogen to diffuse through the tungsten layer and into the interface; subjecting a tungsten electrode to hydrogen plasma, during which atomic hydrogen diffuses through the electrode and into the semiconductor-dielectric interface; and implanting atomic hydrogen into tungsten electrode, followed by an anneal to cause the atomic hydrogen to diffuse through the electrode and into the semiconductor-dielectric interface.

摘要翻译： 一种用于钝化MOS结构的半导体 - 电介质界面以将界面态密度降低到非常低的水平的方法。 具体的示例是具有钨电极的MOSFET，其过去已经阻止下面的半导体 - 电介质界面的钝化达到足以将界面态密度降低到小于5×10 10 / cm 2 -eV的程度。 虽然基本上不透分子氢，但是显示出薄钨层可以透过原子氢，使原子氢能够通过钨电极扩散到下面的半导体 - 电介质界面。 包括三种一般方法：在氢的存在下形成铝 - 钨电极堆叠，以便在钨和铝层之间存储原子氢，随后进行退火，使原子氢扩散通过钨层并进入界面 ; 使钨电极经受氢等离子体，其中原子氢通过电极扩散并进入半导体 - 电介质界面; 并将原子氢注入钨电极中，随后进行退火，使原子氢扩散通过电极并进入半导体 - 电介质界面。