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    MOS device having a passivated semiconductor-dielectric interface
    1.
    发明授权
    MOS device having a passivated semiconductor-dielectric interface 失效
    MOS器件具有钝化的半导体 - 电介质界面

    公开(公告)号：US06603181B2

    公开(公告)日：2003-08-05

    申请号：US09760621

    申请日：2001-01-16

    申请人： Paul M. Solomon ,  Douglas A. Buchanan ,  Eduard A. Cartier ,  Kathryn W. Guarini ,  Fenton R. McFeely ,  Huiling Shang ,  John J. Yourkas

    发明人： Paul M. Solomon ,  Douglas A. Buchanan ,  Eduard A. Cartier ,  Kathryn W. Guarini ,  Fenton R. McFeely ,  Huiling Shang ,  John J. Yourkas

    IPC分类号： H01L2976

    CPC分类号： H01L29/517 ,  H01L21/263 ,  H01L21/28079 ,  H01L29/495 ,  Y10S438/91

    摘要： A MOS structure processed to have a semiconductor-dielectric interface that is passivated to reduce the interface state density. An example is a MOSFET having a gate dielectric on which an electrode is present that is substantially impervious to molecular hydrogen, but sufficiently thin to be pervious to atomic hydrogen, enabling atomic hydrogen to be diffused therethrough into an underlying semiconductor-dielectric interface. Atomic hydrogen diffusion can be achieved by subjecting such an electrode to hydrogen plasma, forming the electrode of an aluminum-tungsten alloy in the presence of hydrogen, and implanting atomic hydrogen into the electrode. The latter two techniques are each followed by an anneal to cause the atomic hydrogen to diffuse through the electrode and into the semiconductor-dielectric interface.

    摘要翻译： 被处理成具有钝化的半导体 - 电介质界面以降低界面态密度的MOS结构。 一个例子是具有栅电介质的MOSFET，其上存在基本上不透分子氢的电极，但是足够薄以能够透过原子氢，使原子氢能够通过其扩散到下面的半导体介电界面中。 原子氢扩散可以通过使这样的电极经受氢等离子体，在氢的存在下形成铝 - 钨合金的电极，并将原子氢注入到电极中来实现。 后两种技术之后各自进行退火以使原子氢扩散通过电极并进入半导体 - 电介质界面。

    Process for passivating the semiconductor-dielectric interface of a MOS device and MOS device formed thereby
    2.
    发明授权
    Process for passivating the semiconductor-dielectric interface of a MOS device and MOS device formed thereby 失效
    钝化MOS器件的半导体介质接口和由此形成的MOS器件的工艺

    公开(公告)号：US06803266B2

    公开(公告)日：2004-10-12

    申请号：US10249184

    申请日：2003-03-20

    申请人： Paul M. Solomon ,  Douglas A. Buchanan ,  Eduard A. Cartier ,  Kathryn W. Guarini ,  Fenton R. McFeely ,  Huiling Shang ,  John J. Yourkas

    发明人： Paul M. Solomon ,  Douglas A. Buchanan ,  Eduard A. Cartier ,  Kathryn W. Guarini ,  Fenton R. McFeely ,  Huiling Shang ,  John J. Yourkas

    IPC分类号： H01L21336

    CPC分类号： H01L29/517 ,  H01L21/263 ,  H01L21/28079 ,  H01L29/495 ,  Y10S438/91

    摘要： A process for passivating the semiconductor-dielectric interface of a MOS structure to reduce the interface state density to a very low level. A particular example is a MOSFET having a tungsten electrode that in the past has prevented passivation of the underlying semiconductor-dielectric interface to an extent sufficient to reduce the interface state density to less than 5×1010/cm2−eV. Though substantially impervious to molecular hydrogen, thin tungsten layers are shown to be pervious to atomic hydrogen, enabling atomic hydrogen to be diffused through a tungsten electrode into an underlying semiconductor-dielectric interface. Three general approaches are encompassed: forming an aluminum-tungsten electrode stack in the presence of hydrogen so as to store atomic hydrogen between the tungsten and aluminum layers, followed by an anneal to cause the atomic hydrogen to diffuse through the tungsten layer and into the interface; subjecting a tungsten electrode to hydrogen plasma, during which atomic hydrogen diffuses through the electrode and into the semiconductor-dielectric interface; and implanting atomic hydrogen into tungsten electrode, followed by an anneal to cause the atomic hydrogen to diffuse through the electrode and into the semiconductor-dielectric interface.

    摘要翻译： 一种用于钝化MOS结构的半导体 - 电介质界面以将界面态密度降低到非常低的水平的方法。 具体的示例是具有钨电极的MOSFET，其过去已经阻止下面的半导体 - 电介质界面的钝化达到足以将界面态密度降低到小于5×10 10 / cm 2 -eV的程度。 虽然基本上不透分子氢，但是显示出薄钨层可以透过原子氢，使原子氢能够通过钨电极扩散到下面的半导体 - 电介质界面。 包括三种一般方法：在氢的存在下形成铝 - 钨电极堆叠，以便在钨和铝层之间存储原子氢，随后进行退火，使原子氢扩散通过钨层并进入界面 ; 使钨电极经受氢等离子体，其中原子氢通过电极扩散并进入半导体 - 电介质界面; 并将原子氢注入钨电极中，随后进行退火，使原子氢扩散通过电极并进入半导体 - 电介质界面。

    Structure having refractory metal film on a substrate
    3.
    发明授权
    Structure having refractory metal film on a substrate 有权
    在基板上具有难熔金属膜的结构

    公开(公告)号：US06579614B2

    公开(公告)日：2003-06-17

    申请号：US09814766

    申请日：2001-03-23

    申请人： Kevin K. Chan ,  Erin C. Jones ,  Fenton R. McFeely ,  Paul M. Solomon ,  John J. Yurkas

    发明人： Kevin K. Chan ,  Erin C. Jones ,  Fenton R. McFeely ,  Paul M. Solomon ,  John J. Yurkas

    IPC分类号： B32B900

    CPC分类号： C23C16/56 ,  H01L21/28008 ,  H01L21/32053 ,  H01L21/3211 ,  H01L29/4908 ,  Y10T428/12576 ,  Y10T428/12583 ,  Y10T428/12674 ,  Y10T428/1284 ,  Y10T428/265

    摘要： A method of treating structures (and the structure formed thereby), so as to prevent or retard the oxidation of a metal film, and/or prevent its delamination a substrate, includes providing a structure including a refractory metal film formed on a substrate, placing the structure into a vessel having a base pressure below approximately 10−7 torr, exposing the structure to a silane gas at a sufficiently high predetermined temperature and predetermined pressure to cause formation of a metal silicide layer on the refractory metal film, and exposing the structure to a second gas at a sufficiently high temperature and pressure to nitride the metal silicide layer into a nitrided layer.

    摘要翻译： 一种处理结构（及其形成的结构）的方法，以防止或延缓金属膜的氧化和/或防止其基板的分层，包括提供包括在基板上形成的难熔金属膜的结构，放置 将结构转换成基本压力低于约10 -7乇的容器，将结构暴露于足够高的预定温度和预定压力下的硅烷气体，以在难熔金属膜上形成金属硅化物层，并使结构暴露 以足够高的温度和压力将第二气体氮化成氮化层。

    Use of band edge gate metals as source drain contacts
    7.
    发明授权
    Use of band edge gate metals as source drain contacts 有权
    使用带边栅极金属作为源极漏极触点

    公开(公告)号：US08741753B2

    公开(公告)日：2014-06-03

    申请号：US13611736

    申请日：2012-09-12

    申请人： Kisik Choi ,  Christian Lavoie ,  Paul M. Solomon ,  Bin Yang ,  Zhen Zhang

    发明人： Kisik Choi ,  Christian Lavoie ,  Paul M. Solomon ,  Bin Yang ,  Zhen Zhang

    IPC分类号： H01L21/20 ,  H01L21/3205 ,  H01L21/00

    CPC分类号： H01L29/7833 ,  H01L21/28512 ,  H01L29/4958 ,  H01L29/4966 ,  H01L29/66545

    摘要： A device includes a gate stack formed over a channel in a semiconductor substrate. The gate stack includes a layer of gate insulator material, a layer of gate metal overlying the layer of gate insulator material, and a layer of contact metal overlying the layer band edge gate metal. The device further includes source and drain contacts adjacent to the channel. The source and drain contacts each include a layer of the gate metal that overlies and is in direct electrical contact with a doped region of the semiconductor substrate, and a layer of contact metal that overlies the layer of gate metal.

    摘要翻译： 一种器件包括形成在半导体衬底中的沟道上方的栅叠层。 栅极堆叠包括栅极绝缘体材料层，覆盖栅极绝缘体材料层的栅极金属层和覆盖层带边缘栅极金属的接触金属层。 该装置还包括邻近通道的源极和漏极接触。 源极和漏极触点各自包括覆盖并与半导体衬底的掺杂区域直接电接触的栅极金属层以及覆盖在栅极金属层上的接触金属层。

    Solid state Klystron
    9.
    发明授权
    Solid state Klystron 有权
    固态速调管

    公开(公告)号：US08283703B2

    公开(公告)日：2012-10-09

    申请号：US11870875

    申请日：2007-10-11

    申请人： Paul M. Solomon

    发明人： Paul M. Solomon

    IPC分类号： H01L27/148

    CPC分类号： H01J25/10 ,  B82Y10/00

    摘要： A solid state Klystron structure is fabricated by forming a source contact and a drain contact to both ends of a conducting wire and by forming a bias gate and a signal gate on the conducting wire. The conducting wire may be at least one carbon nanotube or at least one semiconductor wire with long ballistic mean free paths. By applying a signal at a frequency that corresponds to an integer multiple of the transit time of the ballistic carriers between adjacent fingers of the signal gate, the carriers are bunched within the conducting wire, thus amplifying the current through the solid state Klystron at a frequency of the signal to the signal gate, thus achieving a power gain.

    摘要翻译： 通过在导线的两端形成源极接触和漏极接触并且在导线上形成偏置栅极和信号栅极来制造固态速调管结构。 导线可以是至少一个碳纳米管或具有长的弹道平均自由路径的至少一个半导体线。 通过以对应于信号栅极的相邻指状物之间的弹道载体的渡越时间的整数倍的频率施加信号，载流子在导线内聚束，从而以一定频率放大通过固态速调管的电流 信号到信号门，从而实现功率增益。