公开(公告)号：US06554673B2

公开(公告)日：2003-04-29

申请号：US09917663

申请日：2001-07-31

申请人： Pehr Pehrsson ,  James Butler

发明人： Pehr Pehrsson ,  James Butler

IPC分类号： H01J904

CPC分类号： B82Y10/00 ,  H01J1/3044 ,  H01J1/312 ,  H01J9/022 ,  H01J9/025 ,  H01J2201/30446 ,  H01J2201/30457

摘要： A method for fabricating an electron emitter. This emitter structure may be used to form individual emitters or arrays of emitters. The method is comprised of implanting energetic ions into a diamond lattice to form cones or other continuous regions of damaged diamond. These regions are more electrically conducting than the surrounding diamond lattice, and have locally sharp tips at or near the point of entry of the ion into the diamond. The tips may then also be additionally coated with a layer of a wide band-gap semiconductor. An electrically conducting material may also be placed in proximity to the tips to generate an electric field sufficient to extract electrons from the conducting tips into either the region above the surface, or into the wide band-gap semiconductor layer in contact with the tips. Electrical contact is made to the electrically conducting damage tracks and the electrical circuit may be completed with an electrically conducting material on the surface of the wide band-gap semiconductor or diamond, or in the ambient above the surface of the emitter. The surface of the wideband gap semiconductor or diamond may be chemically modified to enhance the emission of electrons from the surface.

摘要翻译： 一种制造电子发射器的方法。 该发射器结构可以用于形成发射器的单独发射器或阵列。 该方法包括将能量离子注入到金刚石晶格中以形成损坏金刚石的锥体或其它连续区域。 这些区域比周围的金刚石晶格更具导电性，并且在离子进入金刚石的位置处或附近具有局部尖锐的尖端。 然后可以另外涂覆一层宽带隙半导体的尖端。 还可以将导电材料放置在靠近尖端处以产生足以将电子从导电尖端引入到表面上方的区域中的电场，或者与尖端接触的宽带隙半导体层中。 对导电损伤轨道进行电接触，并且电路可以在宽带隙半导体或金刚石的表面上或在发射器表面上的环境中的导电材料完成。 宽带隙半导体或金刚石的表面可以被化学修饰以增强从表面发射电子。

公开(公告)号：US06737793B2

公开(公告)日：2004-05-18

申请号：US10378650

申请日：2003-03-05

申请人： Pehr Pehrsson ,  James Butler

发明人： Pehr Pehrsson ,  James Butler

IPC分类号： H01J102

CPC分类号： B82Y10/00 ,  H01J1/3044 ,  H01J1/312 ,  H01J9/022 ,  H01J9/025 ,  H01J2201/30446 ,  H01J2201/30457

摘要： An apparatus for emitting electrons is provided. The apparatus includes a subsurface emitter having a sharp tip, a substrate including a base, and electrical continuity between the tip, the base, and an external circuit. This emitter structure may be used to form individual emitters or arrays of emitters. Also provided is a method of making electron emitters which is comprised of implanting energetic ions into a diamond lattice to form cones or other continuous regions of damaged diamond. These regions are more electrically conducting than the surrounding diamond lattice, and have locally sharp tips at or near the point of entry of the ion into the diamond. The tips may then also be additionally coated with a layer of a wide band-gap semiconductor. An electrically conducting material may also be placed in proximity to the tips to generate an electric field sufficient to extract electrons from the conducting tips into either the region above the surface, or into the wide band-gap semiconductor layer in contact with the tips. Electrical contact is made to the electrically conducting damage tracks and the electrical circuit may be completed with an electrically conducting material on the surface of the wide band-gap semiconductor or diamond, or in the ambient above the surface of the emitter. The surface of the wideband gap semiconductor or diamond may be chemically modified to enhance the emission of electrons from the surface.

摘要翻译： 提供一种用于发射电子的装置。 该装置包括具有尖锐尖端的地下发射器，包括基座的基板以及尖端，基座和外部电路之间的电连续性。 该发射器结构可以用于形成发射器的单独发射器或阵列。 还提供了一种制造电子发射体的方法，其包括将能量离子注入到金刚石晶格中以形成损坏的金刚石的锥体或其它连续区域。 这些区域比周围的金刚石晶格更具导电性，并且在离子进入金刚石的位置处或附近具有局部尖锐的尖端。 然后可以另外涂覆一层宽带隙半导体的尖端。 还可以将导电材料放置在靠近尖端处以产生足以将电子从导电尖端引入到表面上方的区域中的电场，或者与尖端接触的宽带隙半导体层中。 对导电损伤轨道进行电接触，并且电路可以在宽带隙半导体或金刚石的表面上或在发射器表面上的环境中的导电材料完成。 宽带隙半导体或金刚石的表面可以被化学修饰以增强从表面发射电子。