公开(公告)号：US08723138B2

公开(公告)日：2014-05-13

申请号：US13369340

申请日：2012-02-09

申请人： Volker Drexel ,  Ulrich Mantz ,  Bernd Irmer ,  Christian Penzkofer

发明人： Volker Drexel ,  Ulrich Mantz ,  Bernd Irmer ,  Christian Penzkofer

IPC分类号： H01J37/065

CPC分类号： H01J37/065 ,  H01J1/3044 ,  H01J37/06 ,  H01J2201/30415 ,  H01J2201/30446 ,  H01J2201/30476 ,  H01J2237/06316 ,  H01J2237/06375 ,  H01J2237/065 ,  Y10T29/49888

摘要： A tip of an electron beam source includes a core carrying a coating. The coating is formed from a material having a greater electrical conductivity than a material forming the surface of the core.

摘要翻译： 电子束源的尖端包括承载涂层的芯。 该涂层由具有比形成芯的表面的材料更大的导电性的材料形成。

公开(公告)号：US20120131785A1

公开(公告)日：2012-05-31

申请号：US13369340

申请日：2012-02-09

申请人： Volker Drexel ,  Ulrich Mantz ,  Bernd Irmer ,  Christian Penzkofer

发明人： Volker Drexel ,  Ulrich Mantz ,  Bernd Irmer ,  Christian Penzkofer

IPC分类号： B23P19/04

CPC分类号： H01J37/065 ,  H01J1/3044 ,  H01J37/06 ,  H01J2201/30415 ,  H01J2201/30446 ,  H01J2201/30476 ,  H01J2237/06316 ,  H01J2237/06375 ,  H01J2237/065 ,  Y10T29/49888

摘要： A tip of an electron beam source includes a core carrying a coating. The coating is formed from a material having a greater electrical conductivity than a material forming the surface of the core.

摘要翻译： 电子束源的尖端包括承载涂层的芯。 该涂层由具有比形成芯的表面的材料更大的导电性的材料形成。

公开(公告)号：US20120032576A1

公开(公告)日：2012-02-09

申请号：US13204008

申请日：2011-08-05

申请人： Roger Philips Shurter ,  David James Devlin ,  Nathan Andrew Moody ,  Jose Martin Taccetti ,  Steven John Russell

发明人： Roger Philips Shurter ,  David James Devlin ,  Nathan Andrew Moody ,  Jose Martin Taccetti ,  Steven John Russell

IPC分类号： H01J9/02

CPC分类号： H01J1/304 ,  H01J2201/30446 ,  H01J2201/30457 ,  H01J2201/30469

摘要： An electron source includes a back contact surface having a means for attaching a power source to the back contact surface. The electron source also includes a layer comprising platinum in direct contact with the back contact surface, a composite layer of single-walled carbon nanotubes embedded in platinum in direct contact with the layer comprising platinum. The electron source also includes a nanocrystalline diamond layer in direct contact with the composite layer. The nanocrystalline diamond layer is doped with boron. A portion of the back contact surface is removed to reveal the underlying platinum. The electron source is contained in an evacuable container.

摘要翻译： 电子源包括具有用于将电源附接到后接触表面的装置的后接触表面。 电子源还包括包含与背接触表面直接接触的铂的层，嵌入铂中的与包含铂的层直接接触的单壁碳纳米管的复合层。 电子源还包括与复合层直接接触的纳米晶体金刚石层。 纳米晶金刚石层掺杂硼。 背部接触表面的一部分被去除以露出下面的铂。 电子源包含在可抽真空的容器中。

公开(公告)号：US07965024B2

公开(公告)日：2011-06-21

申请号：US11790196

申请日：2007-04-24

申请人： Kwang-Seok Jeong

发明人： Kwang-Seok Jeong

IPC分类号： H01J1/62

CPC分类号： H01J1/304 ,  H01J9/025 ,  H01J31/127 ,  H01J2201/30446

摘要： An electron emission device includes a substrate, a first electrode on the substrate, a second electrode electrically insulated from the first electrode, a first insulating layer between the first electrode and the second electrode, an electron emission source hole in the first insulating layer and the second electrode to expose the first electrode, and an electron emission source having a first electron emission material layer on the first electrode in the electron emission source hole and a second electron emission material layer on the first electron emission material layer.

摘要翻译： 电子发射器件包括衬底，衬底上的第一电极，与第一电极电绝缘的第二电极，第一电极和第二电极之间的第一绝缘层，第一绝缘层中的电子发射源孔和 第二电极，用于暴露第一电极;以及电子发射源，其在电子发射源孔中的第一电极上具有第一电子发射材料层，在第一电子发射材料层上具有第二电子发射材料层。

公开(公告)号：US07935297B2

公开(公告)日：2011-05-03

申请号：US11370396

申请日：2006-03-06

申请人： Diane E. Pugel

发明人： Diane E. Pugel

IPC分类号： H01F1/04

CPC分类号： H01F1/44 ,  G01Q60/56 ,  H01F1/009 ,  H01J9/025 ,  H01J2201/30446 ,  H01J2201/306

摘要： A method of forming an array of pointed structures comprises depositing a ferrofluid on a substrate, applying a magnetic field to the ferrofluid to generate an array of surface protrusions, and solidifying the surface protrusions to form the array of pointed structures. The pointed structures may have a tip radius ranging from approximately 10 nm to approximately 25 μm. Solidifying the surface protrusions may be carried out at a temperature ranging from approximately 10 degrees C. to approximately 30 degrees C.

摘要翻译： 形成尖锐结构阵列的方法包括将铁磁流体沉积在基底上，向铁磁流体施加磁场以产生阵列的表面突起，并固化表面突起以形成尖锐结构的阵列。 尖的结构可以具有从大约10nm到大约25μm的尖端半径。 表面突起的固化可以在约10摄氏度至约30摄氏度的温度下进行。

公开(公告)号：US07795794B2

公开(公告)日：2010-09-14

申请号：US11589790

申请日：2006-10-31

申请人： Hee-Sung Moon ,  Jae-Myung Kim ,  So-Ra Lee

发明人： Hee-Sung Moon ,  Jae-Myung Kim ,  So-Ra Lee

IPC分类号： H01J1/62

CPC分类号： H01J1/304 ,  H01J2201/30446 ,  H01J2201/306 ,  H01J2329/00

摘要： An electron emission device includes a first plate and a second plate spaced apart and facing each other, a first electrode having an electron emission source electrically coupled thereto, the electron emission source including a carbon-based material and a ferroelectric material, a second electrode disposed adjacent to the first electrode, and a phosphor layer disposed so as to receive electrons emitted by the electron emission source.

摘要翻译： 电子发射装置包括第一板和间隔开并彼此面对的第二板，具有与其电耦合的电子发射源的第一电极，电子发射源包括碳基材料和铁电材料，第二电极设置 邻近第一电极，以及荧光体层，其设置成接收由电子发射源发射的电子。

公开(公告)号：US20100134313A1

公开(公告)日：2010-06-03

申请号：US12627893

申请日：2009-11-30

申请人： Naofumi Aoki ,  Shoji Nishida

发明人： Naofumi Aoki ,  Shoji Nishida

IPC分类号： G08B5/00 ,  H01J1/00 ,  H01J61/94

CPC分类号： H01J1/3044 ,  H01J1/304 ,  H01J1/3046 ,  H01J9/025 ,  H01J31/127 ,  H01J2201/30446 ,  H01J2201/30492 ,  H01J2201/30496 ,  H01J2329/0439 ,  H01J2329/0471 ,  H01J2329/0473

摘要： An electron-emitting device includes an electroconductive member and a lanthanum boride layer on the electroconductive member and further includes an oxide layer between the electroconductive member and the lanthanum boride layer. The oxide layer can contain a lanthanum element. The lanthanum boride layer can be overlaid with a lanthanum oxide layer.

摘要翻译： 电子发射器件包括在导电元件上的导电元件和硼化镧层，并且还包括在导电元件和硼化镧层之间的氧化物层。 氧化物层可以含有镧元素。 硼化镧层可以覆盖有氧化镧层。

公开(公告)号：US20070290601A1

公开(公告)日：2007-12-20

申请号：US11651478

申请日：2007-01-10

申请人： Jason Lo ,  Jian-Min Jeng

发明人： Jason Lo ,  Jian-Min Jeng

IPC分类号： H01J63/04 ,  H01J1/62

CPC分类号： H01J1/304 ,  H01J31/127 ,  H01J2201/30446

摘要： An electron emission source and a field emission device using the same. The diamond-like carbon (DLC) film used as the electron emission source is featured by its film structures formed on the substrate surface arranged in a petal pattern. The height of the DLC flake is in micro scale and the thickness of the flake is in nano scale. The disclosed DLC flake film has a high aspect ratio. Hence, the DLC film has a good enhancing factor favorable for field emission, acting as a good electron-emitting source. In addition, the electron-emitting source material disclosed can be applied in a field emission display to act as a stable electron-emitting source.

摘要翻译： 电子发射源和使用其的场发射装置。 用作电子发射源的类金刚石碳（DLC）膜的特征在于其形成在以花瓣图案布置的基板表面上的膜结构。 DLC薄片的高度为微尺度，薄片的厚度为纳米级。 所公开的DLC薄膜具有高的纵横比。 因此，DLC膜具有良好的增强因子，有利于场致发射，作为良好的电子发射源。 此外，所公开的电子发射源材料可以应用于场致发射显示器中以用作稳定的电子发射源。

公开(公告)号：US20070284573A1

公开(公告)日：2007-12-13

申请号：US11642271

申请日：2006-12-20

申请人： Tseung-Yuen Tseng ,  Chia-Ying Lee ,  Seu-Yi Li ,  Pang Lin

发明人： Tseung-Yuen Tseng ,  Chia-Ying Lee ,  Seu-Yi Li ,  Pang Lin

IPC分类号： H01L29/12 ,  H01L21/00

CPC分类号： H01J9/025 ,  H01J1/304 ,  H01J2201/30446

摘要： This invention relates to a process for fabricating ZnO nanowires with high aspect ratio at low temperature, which is associated with semiconductor manufacturing process and a gate controlled field emission triode is obtained. The process comprises providing a semiconductor substrate, depositing a dielectric layer and a conducting layer, respectively, on the semiconductor substrate, defining the positions of emitter arrays on the dielectric layer and conducting layer, depositing an ultra thin ZnO film as a seeding layer on the substrate, growing the ZnO nanowires as the emitter arrays by using hydrothermal process, and etching the areas excluding the emitter arrays, then obtaining the gate controlled field emission triode.

摘要翻译： 本发明涉及一种用于制造低温下具有高纵横比的ZnO纳米线的方法，其与半导体制造工艺相关，并且获得了栅极控制的场致发射三极管。 该方法包括提供半导体衬底，分别在半导体衬底上沉积电介质层和导电层，限定电介质层和导电层上的发射极阵列的位置，将沉积超薄ZnO膜作为接种层 衬底，通过使用水热法生长ZnO纳米线作为发射极阵列，并蚀刻除发射极阵列之外的区域，然后获得栅极控制的场致发射三极管。

公开(公告)号：US07304423B2

公开(公告)日：2007-12-04

申请号：US10365944

申请日：2003-02-13

申请人： Susumu Sasaki ,  Yoshiyuki Kaneko ,  Shigemi Hirasawa ,  Yuuichi Kijima ,  Kenji Miyata

发明人： Susumu Sasaki ,  Yoshiyuki Kaneko ,  Shigemi Hirasawa ,  Yuuichi Kijima ,  Kenji Miyata

IPC分类号： H01J1/14 ,  G09G3/10

CPC分类号： B82Y10/00 ,  H01J1/304 ,  H01J9/025 ,  H01J2201/30446 ,  H01J2201/30469

摘要： To obtain a paste for electron sources which can enhance heat resistance of carbon nanotubes, which can suppress burn-out of the carbon nanotubes even during heating at a high temperature, and can exhibit a high electron emission performance, boron (B) is added to the paste formed of the carbon nanotubes and metal. Due to the addition of boron, the oxidation of the carbon nanotubes can be suppressed, and the degradation of the electron emission characteristics and the degradation of the uniformity of the emission of electrons during the heating process such as baking can be prevented.

摘要翻译： 为了获得能够提高碳纳米管的耐热性的电子源用糊料，即使在高温加热时也能够抑制碳纳米管的烧尽，并且能够发挥高的电子发射性能，可以向硼（B）中添加硼 该糊状物由碳纳米管和金属形成。 由于添加硼，可以抑制碳纳米管的氧化，并且可以防止在诸如烘烤的加热过程中电子发射特性的劣化和电子发射均匀性的劣化。