摘要:
Disclosed herein are several organic compounds having electron-transporting and/or hole-blocking performance and their preparation method and use and the OLEDs comprising the organic compound. The organic compounds exhibit high ionization potential (IP), electron affinity (Ea), glass transition temperature (Tg) and high electron mobility, and are a kind of good electron-transporting material with good hole-blocking ability. The devices comprising these compounds as one of the emitting layer, electron-transporting layer (ETL) and hole-blocking layer (HBL) show improved efficiency and better color purity.
摘要:
A simple and efficient method of increasing conductivity of the fluorocarbon film is disclosed. By illuminating the fluorocarbon film under ultraviolet light (UV-CFx), the film conductivity can be increased by five orders of magnitude. Devices using such a UV-treated, conductive fluorocarbon film as a buffer layer give much better performance in terms of lower operational voltage and enhanced operational stability. The improved smoothness and lowered hole injection barrier height with UV-CFx are responsible for the enhanced performance of electroluminescent devices.
摘要:
A surface acoustic wave (SAW) device which is made of cBN/diamond composite structures and the fabrication method are disclosed. In the SAW device based on cubic boron nitride and diamond composite structures, the diamond hard layer includes randomly-oriented polycrystalline diamond (poly-D), oriented (heteroepitaxial) diamond, single-crystal diamond wafers and nanocrystalline diamond (nano-D) films. The cBN film with a sound velocity close to that of diamond serves as the piezoelectric layer, which was directly deposited on diamond hard layer without any soft sp2-BN incubation layer by ion assisted physical vapor deposition (PVD) and plasma-enhanced (or ion assisted) chemical vapor deposition (PECVD). Due to the high sound velocity and the low velocity dispersion between the cBN and diamond layered materials, the present SAW device based on cubic boron nitride and diamond composite structures can improve the device performance and operate at ultra-high frequency range.