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    SURFACE-ENHANCED RAMAN SCATTERING BASED ON NANOMATERIALS AS SUBSTRATE
    1.
    发明申请
    SURFACE-ENHANCED RAMAN SCATTERING BASED ON NANOMATERIALS AS SUBSTRATE 审中-公开
    基于纳米材料的表面增强拉曼散射作为基底

    公开(公告)号：US20090201496A1

    公开(公告)日：2009-08-13

    申请号：US12106751

    申请日：2008-04-21

    申请人： Shuit-Tong Lee ,  Ning Bew Wong ,  Mingwang Shao ,  Mingliang Zhang

    发明人： Shuit-Tong Lee ,  Ning Bew Wong ,  Mingwang Shao ,  Mingliang Zhang

    IPC分类号： G01J3/44

    CPC分类号： G01N21/658 ,  Y10T428/2991

    摘要： The present invention relates to an arrangement of nanomaterials which act as a substrate for a surface-enhanced Raman scattering. A method of Raman scattering and a method of manufacturing the substrate are also disclosed. The substrate comprises a plurality of nanostructures, for example nanowires, and metal nanoparticles are arranged on the surface of the nanostructures. The metal nanoparticles are of a material selected from the group comprising Au, Ag, Cu, Fe, Co, Ni, Ru, Rh, Pd, Pt or an alloy. This nano-on-nano arrangement increase the surface area and provides a significant increase in detection sensitivity. A substrate comprising a nanomaterial substrate form of a plurality of nanostructure of a noble metal and noble metal nanoparticles of a different material on the surface of said nanostructure is also disclosed.

    摘要翻译： 本发明涉及用作表面增强拉曼散射的衬底的纳米材料的布置。 还公开了拉曼散射的方法和制造衬底的方法。 衬底包括多个纳米结构，例如纳米线，并且金属纳米颗粒被布置在纳米结构的表面上。 金属纳米粒子是选自Au，Ag，Cu，Fe，Co，Ni，Ru，Rh，Pd，Pt或合金的材料。 这种纳米纳米布置增加了表面积并提供了显着增加的检测灵敏度。 还公开了包含贵金属的多个纳米结构的纳米材料基板形式和在所述纳米结构的表面上的不同材料的贵金属纳米颗粒的基板。

    SURFACE ACOUSTIC WAVE (SAW) DEVICES BASED ON CUBIC BORON NITRIDE/DIAMOND COMPOSITE STRUCTURES
    3.
    发明申请
    SURFACE ACOUSTIC WAVE (SAW) DEVICES BASED ON CUBIC BORON NITRIDE/DIAMOND COMPOSITE STRUCTURES 有权
    基于CUBIC BORON NITRIDE / DIAMOND复合结构的表面声波（SAW）器件

    公开(公告)号：US20080303378A1

    公开(公告)日：2008-12-11

    申请号：US11760996

    申请日：2007-06-11

    申请人： Shuit-Tong LEE ,  Wen-Jun ZHANG ,  You-Sheng ZOU ,  Igor BELLO ,  Kwok Leung MA ,  Kar Man LEUNG ,  Yat Ming CHONG

    发明人： Shuit-Tong LEE ,  Wen-Jun ZHANG ,  You-Sheng ZOU ,  Igor BELLO ,  Kwok Leung MA ,  Kar Man LEUNG ,  Yat Ming CHONG

    IPC分类号： H03H9/145 ,  H01L41/08 ,  H01L41/187 ,  H01L41/24

    CPC分类号： H03H9/02582 ,  H03H9/02574

    摘要： A surface acoustic wave (SAW) device which is made of cBN/diamond composite structures and the fabrication method are disclosed. In the SAW device based on cubic boron nitride and diamond composite structures, the diamond hard layer includes randomly-oriented polycrystalline diamond (poly-D), oriented (heteroepitaxial) diamond, single-crystal diamond wafers and nanocrystalline diamond (nano-D) films. The cBN film with a sound velocity close to that of diamond serves as the piezoelectric layer, which was directly deposited on diamond hard layer without any soft sp2-BN incubation layer by ion assisted physical vapor deposition (PVD) and plasma-enhanced (or ion assisted) chemical vapor deposition (PECVD). Due to the high sound velocity and the low velocity dispersion between the cBN and diamond layered materials, the present SAW device based on cubic boron nitride and diamond composite structures can improve the device performance and operate at ultra-high frequency range.

    摘要翻译： 公开了一种由cBN /金刚石复合结构制成的表面声波（SAW）器件及其制造方法。 在基于立方氮化硼和金刚石复合结构的SAW器件中，金刚石硬质层包括随机取向的多晶金刚石（poly-D），定向（异质外延）金刚石，单晶金刚石晶片和纳米晶金刚石（nano-D）膜 。 具有接近金刚石声速的cBN胶片作为压电层，直接沉积在金刚石硬质层上，没有任何软sp2-BN孵育层，通过离子辅助物理气相沉积（PVD）和等离子体增强（或离子） 化学气相沉积（PECVD）。 由于cBN和金刚石层状材料之间的高音速和低速分散，基于立方氮化硼和金刚石复合结构的本SAW器件可以提高器件性能并在超高频范围内工作。

    Cubic boron nitride/diamond composite layers
    5.
    发明申请
    Cubic boron nitride/diamond composite layers 失效
    立方氮化硼/金刚石复合层

    公开(公告)号：US20060147282A1

    公开(公告)日：2006-07-06

    申请号：US11207535

    申请日：2005-08-19

    申请人： Igor Bello ,  Wenjun Zhang ,  Shuit-Tong Lee

    发明人： Igor Bello ,  Wenjun Zhang ,  Shuit-Tong Lee

    IPC分类号： B23P15/28 ,  B32B19/00

    CPC分类号： C23C14/0647 ,  C23C16/02 ,  C23C16/27 ,  C23C16/342 ,  Y10T407/27 ,  Y10T428/24975 ,  Y10T428/265 ,  Y10T428/30

    摘要： Cubic boron nitride/diamond (cBND) composite films with excellent adherence to various substrates and their fabrication method are disclosed. The cBND composite confining cBN can be prepared without any amorphous/turbostratic BN (aBN/tBN) incubation layers. The cBND composite is established on the compatibility of structural and physical properties of two superior materials: cBN on top and diamond beneath. The underlying diamond is adapted to the substrate of choice using a variety of methods which may include prescratching the substrates, bias enhanced nucleation, etching for depleting undesirable chemical elements, construction of buffer layers and gradient buffer layers for the isolation of undesirable chemical elements or/and adaptation of physical properties. The diamond nuclei are preferably formed either by bias-enhanced nucleation or by pre-scratching the substrate prior to nucleation. The cBN films in cBND composites of the present invention can grow directly on the underlaying diamond films in heteroepitaxial relationships.

    摘要翻译： 公开了对各种基材具有优异粘附性的立方氮化硼/金刚石（cBND）复合膜及其制造方法。 cBND复合材料限制cBN可以在没有任何无定形/涡流BN（aBN / tBN）孵育层的情况下制备。 cBND复合材料建立在两种优质材料的结构和物理性能的兼容性上：顶部的cBN和下面的金刚石。 底层金刚石使用各种方法适应于所选择的基底，其可以包括预先对基底进行预处理，偏置增强的成核，用于消耗不期望的化学元素的蚀刻，用于隔离不期望的化学元素的缓冲层和梯度缓冲层的构造或/ 和物理性质的适应。 金刚石核优选通过偏置增强成核或通过在成核之前预先刮擦基底来形成。 本发明的cBND复合材料中的cBN膜可以以异质外延关系直接在底层金刚石膜上生长。

    Luminescent system
    6.
    发明授权
    Luminescent system 有权
    发光系统

    公开(公告)号：US08217371B2

    公开(公告)日：2012-07-10

    申请号：US12192010

    申请日：2008-08-14

    申请人： Shuit Tong Lee ,  Dorothy Duoduo Ma

    发明人： Shuit Tong Lee ,  Dorothy Duoduo Ma

    IPC分类号： F21K2/00

    CPC分类号： C09K11/7701 ,  C09K11/565 ,  C09K11/572 ,  C09K11/59 ,  C09K11/7729

    摘要： A luminescent system includes a layer of donor material, an acceptor material and a barrier layer therebetween. The energy transfer between the donor and acceptor is biased to the acceptor layer, by an asymmetric energy transfer efficiency created by the barrier layer. Energy from the donor material is converted into photo-luminescence in the acceptor layer by discouraging photo-luminescence quenching caused by energy backflow.

    摘要翻译： 发光系统包括施主材料层，受主材料和它们之间的阻挡层。 施主和受体之间的能量转移通过由阻挡层产生的不对称能量转移效率而偏向受主层。 通过抑制由能量回流引起的光致发光猝灭，来自供体材料的能量在受体层中转化为光致发光。

    Cubic boron nitride/diamond composite layers
    8.
    发明授权
    Cubic boron nitride/diamond composite layers 失效
    立方氮化硼/金刚石复合层

    公开(公告)号：US07645513B2

    公开(公告)日：2010-01-12

    申请号：US11207535

    申请日：2005-08-19

    申请人： Igor Bello ,  Wenjun Zhang ,  Shuit-Tong Lee

    发明人： Igor Bello ,  Wenjun Zhang ,  Shuit-Tong Lee

    IPC分类号： B32B9/00

    CPC分类号： C23C14/0647 ,  C23C16/02 ,  C23C16/27 ,  C23C16/342 ,  Y10T407/27 ,  Y10T428/24975 ,  Y10T428/265 ,  Y10T428/30

    摘要： Cubic boron nitride/diamond (cBND) composite films with excellent adherence to various substrates and their fabrication method are disclosed. The cBND composite confining cBN can be prepared without any amorphous/turbostratic BN (aBN/tBN) incubation layers. The cBND composite is established on the compatibility of structural and physical properties of two superior materials: cBN on top and diamond beneath. The underlying diamond is adapted to the substrate of choice using a variety of methods which may include prescratching the substrates, bias enhanced nucleation, etching for depleting undesirable chemical elements, construction of buffer layers and gradient buffer layers for the isolation of undesirable chemical elements or/and adaptation of physical properties. The diamond nuclei are preferably formed either by bias-enhanced nucleation or by pre-scratching the substrate prior to nucleation. The cBN films in cBND composites of the present invention can grow directly on the underlaying diamond films in heteroepitaxial relationships.

    摘要翻译： 公开了对各种基材具有优异粘附性的立方氮化硼/金刚石（cBND）复合膜及其制造方法。 cBND复合材料限制cBN可以在没有任何无定形/涡流BN（aBN / tBN）孵育层的情况下制备。 cBND复合材料建立在两种优质材料的结构和物理性能的兼容性上：顶部的cBN和下面的金刚石。 底层金刚石使用各种方法适应于所选择的基底，其可以包括预先对基底进行预处理，偏置增强的成核，用于消耗不期望的化学元素的蚀刻，用于隔离不期望的化学元素的缓冲层和梯度缓冲层的构造或/ 和物理性质的适应。 金刚石核优选通过偏置增强成核或通过在成核之前预先刮擦基底来形成。 本发明的cBND复合材料中的cBN膜可以以异质外延关系直接在底层金刚石膜上生长。

    Surface acoustic wave (SAW) devices based on cubic boron nitride/diamond composite structures
    9.
    发明授权
    Surface acoustic wave (SAW) devices based on cubic boron nitride/diamond composite structures 有权
    基于立方氮化硼/金刚石复合结构的表面声波（SAW）器件

    公开(公告)号：US07579759B2

    公开(公告)日：2009-08-25

    申请号：US11760996

    申请日：2007-06-11

    申请人： Shuit-Tong Lee ,  Wen-Jun Zhang ,  You-Sheng Zou ,  Igor Bello ,  Kwok Leung Ma ,  Kar Man Leung ,  Yat Ming Chong

    发明人： Shuit-Tong Lee ,  Wen-Jun Zhang ,  You-Sheng Zou ,  Igor Bello ,  Kwok Leung Ma ,  Kar Man Leung ,  Yat Ming Chong

    IPC分类号： H01L41/09

    CPC分类号： H03H9/02582 ,  H03H9/02574

    摘要： A surface acoustic wave (SAW) device which is made of cBN/diamond composite structures and the fabrication method are disclosed. In the SAW device based on cubic boron nitride and diamond composite structures, the diamond hard layer includes randomly-oriented polycrystalline diamond (poly-D), oriented (heteroepitaxial) diamond, single-crystal diamond wafers and nanocrystalline diamond (nano-D) films. The cBN film with a sound velocity close to that of diamond serves as the piezoelectric layer, which was directly deposited on diamond hard layer without any soft sp2-BN incubation layer by ion assisted physical vapor deposition (PVD) and plasma-enhanced (or ion assisted) chemical vapor deposition (PECVD). Due to the high sound velocity and the low velocity dispersion between the cBN and diamond layered materials, the present SAW device based on cubic boron nitride and diamond composite structures can improve the device performance and operate at ultra-high frequency range.

    摘要翻译： 公开了一种由cBN /金刚石复合结构制成的表面声波（SAW）器件及其制造方法。 在基于立方氮化硼和金刚石复合结构的SAW器件中，金刚石硬质层包括随机取向的多晶金刚石（poly-D），定向（异质外延）金刚石，单晶金刚石晶片和纳米晶金刚石（nano-D）膜 。 具有接近金刚石声速的cBN胶片作为压电层，直接沉积在金刚石硬质层上，没有任何软sp2-BN孵育层，通过离子辅助物理气相沉积（PVD）和等离子体增强（或离子） 化学气相沉积（PECVD）。 由于cBN和金刚石层状材料之间的高音速和低速分散，基于立方氮化硼和金刚石复合结构的本SAW器件可以提高器件性能并在超高频范围内工作。

    Organic electroluminescent device with improved hole injecting structure
    10.
    发明授权
    Organic electroluminescent device with improved hole injecting structure 有权
    具有改进的空穴注入结构的有机电致发光器件

    公开(公告)号：US06351067B2

    公开(公告)日：2002-02-26

    申请号：US09234457

    申请日：1999-01-21

    申请人： Shuit-Tong Lee ,  Zhen-Bo Deng ,  William Alexander Gambling

    发明人： Shuit-Tong Lee ,  Zhen-Bo Deng ,  William Alexander Gambling

    IPC分类号： H05B3326

    CPC分类号： H01L51/5092 ,  H01L51/5088 ,  Y10S428/917

    摘要： An organic electroluminescent device (OELD) with improved luminescent efficiency has been fabricated upon inclusion of an inorganic buffer layer in the hole injecting or electron injecting regions. The structure of the device can be as follows (from bottom to top): ITO\buffer layer\NPB\Alq\Mg:Ag. In comparison with devices without the buffer layer, the present OELD may be more efficient in a proper bias condition.

    摘要翻译： 已经在空穴注入区域或电子注入区域中包含无机缓冲层，制造了具有改善的发光效率的有机电致发光器件（OELD）。 器件的结构可以如下（从下到上）：ITO \缓冲层\ NPB \ Alq \ Mg：Ag。 与没有缓冲层的器件相比，本发明的OELD可以在适当的偏置条件下更有效。