摘要:
A method for etching a line pattern in an etch layer disposed below an antireflective coating (ARC) layer below a patterned mask is provided. The method includes opening the ARC layer, in which an ARC opening gas comprising CF3I, a fluorocarbon (including hydrofluorocarbon) containing gas, and an oxygen containing gas are provided, a plasma is formed from the ARC opening gas to open the ARC layer, and providing the ARC opening gas is stopped. Line pattern features are etched into the etch layer through the opened ARC layer.
摘要:
Disclosed is a location-based community service provision system for setting a plurality of main arenas by dividing a geographical area in a regional unit, setting and storing one or more virtual spatial locations, the one or more virtual spatial locations being a projection of real spatial public locations, as spots in one of the main arenas, receiving information on posts registered in spots transmitted through a mobile terminal by providing one or more pieces of information on the spots belonging to the main arena from information on a location of the mobile terminal to the mobile terminal, and storing the received information on posts with a link with the spots. An apparatus for recommending a spot or an azit in a moblog-based regional community system using a mobile terminal, includes a recommendation system for executing a recommendation algorithm to recommend azits, spots, friends or neighbors for each user; a level system for setting and managing a level for each azit and spot according to a preset rule; and a link evaluator for performing an evaluation on each link and managing a result of the evaluation.
摘要:
A method for etching a line pattern in an etch layer disposed below an antireflective coating (ARC) layer below a patterned mask is provided. The method includes opening the ARC layer, in which an ARC opening gas comprising CF3I, a fluorocarbon (including hydrofluorocarbon) containing gas, and an oxygen containing gas are provided, a plasma is formed from the ARC opening gas to open the ARC layer, and providing the ARC opening gas is stopped. Line pattern features are etched into the etch layer through the opened ARC layer.