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    Apparatus and Method for Recommending the Spot or the Azit in the Regional Community System Based on Mobile Blog Through the Mobile Terminal
    1.
    发明申请
    Apparatus and Method for Recommending the Spot or the Azit in the Regional Community System Based on Mobile Blog Through the Mobile Terminal 审中-公开
    通过移动终端基于移动博客推荐区域社区系统中的现货或叠加的装置和方法

    公开(公告)号：US20070287441A1

    公开(公告)日：2007-12-13

    申请号：US11572375

    申请日：2005-07-19

    申请人： Hyuck Jin Im ,  Ji Kim ,  Kun Park ,  Jung Seo ,  Chester An ,  Yong Lee ,  Chol Im ,  Jonathan Kim ,  Ui Chung ,  Youn Go ,  Hyun Kwon ,  Soo Kim ,  Jae Ahn ,  Don Won ,  Sung Shim

    发明人： Hyuck Jin Im ,  Ji Kim ,  Kun Park ,  Jung Seo ,  Chester An ,  Yong Lee ,  Chol Im ,  Jonathan Kim ,  Ui Chung ,  Youn Go ,  Hyun Kwon ,  Soo Kim ,  Jae Ahn ,  Don Won ,  Sung Shim

    IPC分类号： H04Q7/20

    CPC分类号： G06Q30/02 ,  H04L47/10 ,  H04L63/08 ,  H04L67/04 ,  H04L67/18 ,  H04L67/24 ,  H04L67/26 ,  H04W4/029

    摘要： Disclosed is a location-based community service provision system for setting a plurality of main arenas by dividing a geographical area in a regional unit, setting and storing one or more virtual spatial locations, the one or more virtual spatial locations being a projection of real spatial public locations, as spots in one of the main arenas, receiving information on posts registered in spots transmitted through a mobile terminal by providing one or more pieces of information on the spots belonging to the main arena from information on a location of the mobile terminal to the mobile terminal, and storing the received information on posts with a link with the spots. An apparatus for recommending a spot or an azit in a moblog-based regional community system using a mobile terminal, includes a recommendation system for executing a recommendation algorithm to recommend azits, spots, friends or neighbors for each user; a level system for setting and managing a level for each azit and spot according to a preset rule; and a link evaluator for performing an evaluation on each link and managing a result of the evaluation.

    摘要翻译： 公开了一种基于位置的社区服务提供系统，用于通过划分区域单元中的地理区域来设置多个主要场所，设置和存储一个或多个虚拟空间位置，所述一个或多个虚拟空间位置是真实空间的投影 公共场所，作为主要场所之一的场所，通过从移动终端的位置的信息提供关于属于主要场所的点的一个或多个信息，接收通过移动终端发送的点登记的信息的信息， 移动终端，并且将接收到的信息存储在具有点的链接的帖子上。 一种用于使用移动终端在基于移动电话的区域社区系统中推荐斑点或叠加的装置，包括：推荐系统，用于执行推荐算法以推荐每个用户的az its，斑点，朋友或邻居; 用于根据预设规则为每个叠加和点设置和管理级别的级别系统; 以及用于对每个链路执行评估并管理评估结果的链接评估器。

    CD BIAS LOADING CONTROL WITH ARC LAYER OPEN
    6.
    发明申请
    CD BIAS LOADING CONTROL WITH ARC LAYER OPEN 有权
    光盘加载控制与ARC层开放

    公开(公告)号：US20100323525A1

    公开(公告)日：2010-12-23

    申请号：US12809021

    申请日：2008-12-09

    申请人： Kyeong-Koo Chi ,  Jonathan Kim

    发明人： Kyeong-Koo Chi ,  Jonathan Kim

    IPC分类号： H01L21/3065

    CPC分类号： H01L21/31144 ,  H01L21/0276

    摘要： A method for etching a line pattern in an etch layer disposed below an antireflective coating (ARC) layer below a patterned mask is provided. The method includes opening the ARC layer, in which an ARC opening gas comprising CF3I, a fluorocarbon (including hydrofluorocarbon) containing gas, and an oxygen containing gas are provided, a plasma is formed from the ARC opening gas to open the ARC layer, and providing the ARC opening gas is stopped. Line pattern features are etched into the etch layer through the opened ARC layer.

    摘要翻译： 提供了一种用于蚀刻设置在图案化掩模下面的抗反射涂层（ARC）层下方的蚀刻层中的线图案的方法。 该方法包括：在其中设置包括CF 3I的ARC开口气体，含有气体的碳氟化合物（包括氢氟烃）和含氧气体的ARC层，从ARC开口气体形成等离子体以打开ARC层，并且 提供ARC打开气体停止。 线图案特征通过打开的ARC层蚀刻到蚀刻层中。

    CD bias loading control with ARC layer open
    7.
    发明授权
    CD bias loading control with ARC layer open 有权
    CD偏压加载控制与ARC层打开

    公开(公告)号：US08470715B2

    公开(公告)日：2013-06-25

    申请号：US12809021

    申请日：2008-12-09

    申请人： Kyeong-Koo Chi ,  Jonathan Kim

    发明人： Kyeong-Koo Chi ,  Jonathan Kim

    IPC分类号： H01L21/302 ,  H01L21/461

    CPC分类号： H01L21/31144 ,  H01L21/0276

    摘要： A method for etching a line pattern in an etch layer disposed below an antireflective coating (ARC) layer below a patterned mask is provided. The method includes opening the ARC layer, in which an ARC opening gas comprising CF3I, a fluorocarbon (including hydrofluorocarbon) containing gas, and an oxygen containing gas are provided, a plasma is formed from the ARC opening gas to open the ARC layer, and providing the ARC opening gas is stopped. Line pattern features are etched into the etch layer through the opened ARC layer.

    摘要翻译： 提供了一种用于蚀刻设置在图案化掩模下面的抗反射涂层（ARC）层下方的蚀刻层中的线图案的方法。 该方法包括：在其中设置包括CF 3I的ARC开口气体，含有气体的碳氟化合物（包括氢氟烃）和含氧气体的ARC层，从ARC开口气体形成等离子体以打开ARC层，并且 提供ARC打开气体停止。 线图案特征通过打开的ARC层蚀刻到蚀刻层中。

    Umbrella for automobile
    8.
    发明授权
    Umbrella for automobile 失效
    汽车雨伞

    公开(公告)号：US08276607B2

    公开(公告)日：2012-10-02

    申请号：US12751878

    申请日：2010-03-31

    申请人： Jonathan Kim

    发明人： Jonathan Kim

    IPC分类号： E04H15/06

    CPC分类号： A45B11/00 ,  A45B19/00 ,  A45B23/00 ,  A45B2023/0025 ,  A45B2023/0093

    摘要： A retractable umbrella includes a retractable tube, a pulling rod, a rainshade screen, and a drip water collector. The retractable tube comprises retractable reels, and it is attached on a door frame of a car. Each of the retractable reels is disposed in the retractable tube. The pulling rod is attached to a rim portion of the door accepting frame of the car. The rainshade screen comprises an outer edge, an inner edge, a front edge, and a rear edge. The outer edge is attached to the retractable reels of the retractable tube. The inner edge is attached to the pulling rod. The front edge connects front portions of the inner and outer edges. The rear edge connects rear portions of the inner and outer edges. The drip water collector collects water dripped from the rainshade screen, and is disposed at an inner portion of door of the car.

    摘要翻译： 可伸缩伞包括可伸缩管，拉杆，雨伞筛和滴水收集器。 可伸缩管包括可收回的卷轴，并且其连接在汽车的门框上。 每个可伸缩卷轴设置在可缩回管中。 拉杆附接到轿厢的门接收框架的边缘部分。 雨刷屏幕包括外边缘，内边缘，前边缘和后边缘。 外边缘连接到可伸缩管的可伸缩卷轴上。 内边缘连接到拉杆上。 前边缘连接内边缘和外边缘的前部。 后边缘连接内边缘和外边缘的后部。 滴水收集器收集从雨淋屏幕滴下的水，并且设置在轿厢门的内部。

    LINE WIDTH ROUGHNESS CONTROL WITH ARC LAYER OPEN
    9.
    发明申请
    LINE WIDTH ROUGHNESS CONTROL WITH ARC LAYER OPEN 有权
    线宽宽度控制与弧层开放

    公开(公告)号：US20090087996A1

    公开(公告)日：2009-04-02

    申请号：US12210777

    申请日：2008-09-15

    申请人： Kyeong-Koo Chi ,  Jonathan Kim

    发明人： Kyeong-Koo Chi ,  Jonathan Kim

    IPC分类号： H01L21/3065

    CPC分类号： H01L21/31116 ,  H01L21/31144

    摘要： To achieve the foregoing and in accordance with the purpose of the present invention a method for etching an etch layer disposed below an antireflective coating (ARC) layer below a patterned mask is provided. The ARC layer is opened, and features are etched into the etch layer through the patterned mask. The opening the ARC layer includes (1) providing an ARC opening gas comprising a halogen containing gas, COS, and an oxygen containing gas, (2) forming a plasma from the ARC opening gas to open the ARC layer, and (3) stopping providing the ARC opening gas to stop the plasma. The patterned mask may be a photoresist (PR) mask having a line-space pattern. COS in the ARC opening gas reduces line width roughness (LWR) of the patterned features of the etch layer.

    摘要翻译： 为了实现上述目的，并且根据本发明的目的，提供了一种用于蚀刻设置在图案化掩模下面的抗反射涂层（ARC）层下方的蚀刻层的方法。 ARC层被打开，并且通过图案化掩模将特征蚀刻到蚀刻层中。 ARC层的开口包括（1）提供包含含卤素气体COS和含氧气体的ARC开口气体，（2）从ARC开口气体形成等离子体以打开ARC层，以及（3）停止 提供ARC打开的气体来停止等离子体。 图案化掩模可以是具有线间隔图案的光致抗蚀剂（PR）掩模。 ARC打开气体中的COS降低蚀刻层的图案化特征的线宽粗糙度（LWR）。

    METHOD AND APPARATUS FOR PROVIDING MASK IN SEMICONDUCTOR PROCESSING
    10.
    发明申请
    METHOD AND APPARATUS FOR PROVIDING MASK IN SEMICONDUCTOR PROCESSING 有权
    用于在半导体处理中提供掩模的方法和装置

    公开(公告)号：US20070269721A1

    公开(公告)日：2007-11-22

    申请号：US11383835

    申请日：2006-05-17

    申请人： Yoojin Kim ,  Camelia Rusu ,  Jonathan Kim

    发明人： Yoojin Kim ,  Camelia Rusu ,  Jonathan Kim

    IPC分类号： C03C15/00 ,  C03C25/68 ,  B44C1/22 ,  C23F1/00 ,  G03F1/00

    CPC分类号： H01L21/31144 ,  H01J37/32082 ,  H01J2237/3342 ,  H01L21/0273 ,  H01L21/31122 ,  H01L21/32139

    摘要： Disclosed is a method for processing a two layer mask for use in fabrication of semiconductor devices whereby the critical dimension (CD) of a semiconductor device being fabricated with the mask can be controlled. After forming a carbon mask layer and a silicon containing photoresist layer on the carbon mask, a two-step process forms openings in the carbon mask layer, as required for subsequent device fabrication. The structure is placed in a plasma processing chamber, and an oxygen plasma is employed to partially etch the carbon layer. The oxygen plasma reacts with silicon in the photoresist to form a hard silicon oxide layer on the surface of the photoresist. A hydrogen plasma is then employed to complete the etch through the carbon layer with a reduced critical dimension. Damage to the silicon containing photoresist layer is kept to a minimum during the plasma etch process by limiting the low frequency RF power.

    摘要翻译： 公开了一种用于制造半导体器件的双层掩模的处理方法，由此可以控制用掩模制造的半导体器件的临界尺寸（CD）。 在碳掩模上形成碳掩模层和含硅光致抗蚀剂层之后，根据随后的器件制造的需要，两步法在碳掩模层中形成开口。 将该结构放置在等离子体处理室中，并且使用氧等离子体来部分蚀刻碳层。 氧等离子体与光致抗蚀剂中的硅反应，在光致抗蚀剂的表面上形成硬的氧化硅层。 然后使用氢等离子体来完成通过具有减小的临界尺寸的碳层的蚀刻。 通过限制低频RF功率，在等离子体蚀刻工艺期间，使含硅光致抗蚀剂层的损伤保持最小。