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1.发明申请X-RAY RADIATION DETECTOR FOR DETECTING IONIZING RADIATION, IN PARTICULAR FOR USE IN A CT SYSTEM 有权用于检测放射性的X射线辐射检测器，特别适用于CT系统公开(公告)号：US20100246758A1
公开(公告)日：2010-09-30
申请号：US12731179
申请日：2010-03-25
摘要： An X-ray radiation detector is disclosed for detecting ionizing radiation, in particular for use in a CT system, with a multiplicity of detector elements. In at least one embodiment, each detector element includes a semiconductor used as detector material with an upper side facing the radiation and a lower side facing away from the radiation, at least two electrodes, wherein one electrode is formed on the upper side of the semiconductor by a metallization layer, and the sum of all detector elements forms a base, which has a base normal at each point. In at least one embodiment, the invention is distinguished by the fact that the upper side of the semiconductor has a surface structure with a surface normal at each point, wherein the surface normal at least in part subtends an angle to the base normal. In at least one embodiment, the invention furthermore relates to a CT system provided with an X-ray radiation detector, which advantageously includes a multiplicity of detector elements structured according to at least one embodiment of the invention.
摘要翻译： 公开了一种用于检测电离辐射的X射线辐射检测器，特别是用于CT系统中的多个检测器元件。 在至少一个实施例中，每个检测器元件包括用作检测器材料的半导体，其具有面向辐射的上侧和背离辐射的下侧，至少两个电极，其中一个电极形成在半导体的上侧 通过金属化层，并且所有检测器元件的总和形成基部，其在每个点处具有基准法线。 在至少一个实施例中，本发明的区别在于，半导体的上侧具有在每个点处具有表面法线的表面结构，其中表面法线至少部分地对准与基准法线的角度。 在至少一个实施例中，本发明还涉及一种具有X射线辐射检测器的CT系统，其有利地包括根据本发明的至少一个实施例构造的多个检测器元件。
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2.发明授权X-ray radiation detector for detecting ionizing radiation, in particular for use in a CT system 有权用于检测电离辐射的X射线辐射检测器，特别用于CT系统中公开(公告)号：US08466423B2
公开(公告)日：2013-06-18
申请号：US12731179
申请日：2010-03-25
IPC分类号： G01T1/24
摘要： An X-ray radiation detector is disclosed for detecting ionizing radiation, in particular for use in a CT system, with a multiplicity of detector elements. In at least one embodiment, each detector element includes a semiconductor used as detector material with an upper side facing the radiation and a lower side facing away from the radiation, at least two electrodes, wherein one electrode is formed on the upper side of the semiconductor by a metallization layer, and the sum of all detector elements forms a base, which has a base normal at each point. In at least one embodiment, the invention is distinguished by the fact that the upper side of the semiconductor has a surface structure with a surface normal at each point, wherein the surface normal at least in part subtends an angle to the base normal. In at least one embodiment, the invention furthermore relates to a CT system provided with an X-ray radiation detector, which advantageously includes a multiplicity of detector elements structured according to at least one embodiment of the invention.
摘要翻译： 公开了一种用于检测电离辐射的X射线辐射检测器，特别是用于CT系统中的多个检测器元件。 在至少一个实施例中，每个检测器元件包括用作检测器材料的半导体，其具有面向辐射的上侧和背离辐射的下侧，至少两个电极，其中一个电极形成在半导体的上侧 通过金属化层，并且所有检测器元件的总和形成基部，其在每个点处具有基准法线。 在至少一个实施例中，本发明的区别在于，半导体的上侧具有在每个点处具有表面法线的表面结构，其中表面法线至少部分地对准与基准法线的角度。 在至少一个实施例中，本发明还涉及一种具有X射线辐射检测器的CT系统，其有利地包括根据本发明的至少一个实施例构造的多个检测器元件。
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3.发明申请Detector Material For A Detector For Use In CT Systems, Detector Element And Detector 有权检测器材料用于CT系统，检测器元件和检测器公开(公告)号：US20110200166A1
公开(公告)日：2011-08-18
申请号：US13124216
申请日：2009-04-16
CPC分类号： H01L27/14659 , H01L31/0296 , H01L31/115
摘要： A detector material for a detector is disclosed for use in CT systems, particularly in dual-energy CT systems, including a doped semiconductor. In at least one embodiment, the semiconductor is doped with a donator in a concentration, wherein the concentration of the donator corresponds to at least 50% of the maximum solubility thereof in the semiconductor material, and the donator produces flat imperfections having an excitation energy. The flat imperfections can be ionized and can provide additional freely moveable charge carriers. The freely moveable charge carriers can be captured by the spatially separated deep imperfections and thus reduce the number of the charged deep imperfections. In this way, pure time- and radiation-dependent effects, such as polarization, occur more often. The invention further more relates to the use of the detector material in a CT or dual-energy CT system for generating tomographic images of a test object.
摘要翻译： 公开了一种用于检测器的检测器材料，用于CT系统，特别是在包括掺杂半导体的双能CT系统中。 在至少一个实施方案中，半导体以浓度掺入捐赠者，其中捐赠者的浓度对应于其在半导体材料中的最大溶解度的至少50％，并且捐赠者产生具有激发能的平坦缺陷。 扁平的缺陷可以被电离并且可以提供额外的可自由移动的电荷载体。 可自由移动的电荷载体可以通过空间分离的深度缺陷捕获，从而减少带电深度缺陷的数量。 这样，纯粹的时间和辐射依赖的影响，如极化，更经常地发生。 本发明还涉及在用于产生测试对象的断层图像的CT或双能量CT系统中使用检测器材料。
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4.发明授权Radiation converter material, radiation converter, radiation detector, use of a radiation converter material and method for producing a radiation converter material 有权辐射转换器材料，辐射转换器，辐射探测器，辐射转换器材料的使用以及用于产生辐射转换器材料的方法公开(公告)号：US08920686B2
公开(公告)日：2014-12-30
申请号：US13016016
申请日：2011-01-28
IPC分类号： H01B1/06 , H01L31/0296 , H01L31/0272 , H01L31/0264 , H01L31/115 , G01T1/24
CPC分类号： G01T1/24 , H01L31/115
摘要： A radiation converter material includes a semiconductor material used for directly converting radiation quanta into electrical charge carriers. In at least one embodiment, the semiconductor material includes a dopant in a dopant concentration and defect sites produced in a process-dictated manner in such a way that the semiconductor material includes an ohmic resistivity in a range of between 5·107 Ω·cm and 2·109 Ω·cm. Such a radiation converter material is particularly well matched to the requirements in particular in human-medical applications with regard to the high flux rate present and the spectral distribution of the radiation quanta. In at least one embodiment, the invention additionally relates to a radiation converter and a radiation detector, and a use of and a method for producing such a radiation converter material.
摘要翻译： 辐射转换器材料包括用于将辐射量子直接转换成电荷载流子的半导体材料。 在至少一个实施例中，半导体材料包括掺杂剂浓度的掺杂剂和以工艺规定的方式产生的缺陷位置，使得半导体材料包括在介于5×10 7Ω·cm之间的欧姆电阻率 和2·109＆OHgr··cm。 关于高通量率和辐射量子谱的光谱分布，这种辐射转换器材料特别好地符合人类医疗应用中的要求。 在至少一个实施例中，本发明还涉及辐射转换器和辐射探测器，以及用于生产这种辐射转换器材料的用途和方法。
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5.发明申请Direct Radiation Converter, Radiation Detector, Medical Apparatus And Method For Producing A Direct Radiation Converter 有权直接辐射转换器，辐射检测器，用于生产直接辐射转换器的医疗设备和方法公开(公告)号：US20120193739A1
公开(公告)日：2012-08-02
申请号：US13359554
申请日：2012-01-27
IPC分类号： H01L31/0304 , H01L31/032 , H01L31/0296
CPC分类号： G01T1/24 , H01L31/085
摘要： A direct radiation converter is disclosed which includes a radiation detection material having an anode side and a cathode side in which the radiation detection material has a doping profile running in the anode-side to cathode-side direction. A radiation detector is further disclosed having such a direct radiation converter and having an anode array and a cathode array, and optionally having evaluation electronics for reading out a detector signal, as well as a medical apparatus having such a radiation detector. Also described is a method for producing a direct radiation converter which includes incorporating into a radiation detection material a doping profile running in the anode-side to cathode-side direction.
摘要翻译： 公开了一种直接辐射转换器，其包括具有阳极侧和阴极侧的放射线检测材料，其中放射线检测材料具有在阳极侧至阴极侧方向上运行的掺杂分布。 还公开了具有这种直接辐射转换器并且具有阳极阵列和阴极阵列以及可选地具有用于读出检测器信号的评估电子装置的放射线检测器以及具有这种放射线检测器的医疗装置。 还描述了一种用于生产直接辐射转换器的方法，其包括在辐射检测材料中并入在阳极侧至阴极侧方向上运行的掺杂分布。
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公开(公告)号：US08135109B2
公开(公告)日：2012-03-13
申请号：US12588244
申请日：2009-10-08
IPC分类号： H05G1/60
CPC分类号： G01T1/244
摘要： A direct radiation converter is disclosed. In at least one embodiment, the direct radiation converter is operated using a direct conversion element having a temperature of at least 38° C. and at most 55° C., and designed for detecting X-ray radiation.
摘要翻译： 公开了一种直接辐射转换器。 在至少一个实施例中，使用具有至少38℃和至多55℃的温度的直接转换元件来操作直接辐射转换器，并被设计用于检测X射线辐射。
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公开(公告)号：US20100098210A1
公开(公告)日：2010-04-22
申请号：US12588244
申请日：2009-10-08
CPC分类号： G01T1/244
摘要： A direct radiation converter is disclosed. In at least one embodiment, the direct radiation converter is operated using a direct conversion element having a temperature of at least 38° C. and at most 55° C., and designed for detecting X-ray radiation.
摘要翻译： 公开了一种直接辐射转换器。 在至少一个实施例中，使用具有至少38℃和至多55℃的温度的直接转换元件来操作直接辐射转换器，并被设计用于检测X射线辐射。
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8.发明授权X-ray detector comprising a directly converting semiconductor layer and calibration method for such an X-ray detector 有权X射线检测器包括直接转换半导体层和用于这种X射线检测器的校准方法公开(公告)号：US08389928B2
公开(公告)日：2013-03-05
申请号：US13088448
申请日：2011-04-18
IPC分类号： G01D18/00
摘要： An X-ray detector includes a directly converting semiconductor layer for converting an incident radiation into electrical signals with a band gap energy characteristic of the semiconductor layer, and at least one light source for coupling light into the semiconductor layer, wherein the generated light, for the simulation of incident X-ray quanta, has an energy above the band gap energy of the semiconductor layer. One embodiment includes at least one evaluation unit for calculating an evaluation signal from the electrical signals generated when the light is coupled into the semiconductor layer, and at least one calibration unit for calibrating at least one pulse discriminator on the basis of the evaluation signal. This provides the prerequisites for a rapidly repeatable calibration of the X-ray detector taking into account of the present polarization state without using X-ray radiation. Another embodiment additionally relates to a calibration method for such an X-ray detector.
摘要翻译： X射线检测器包括用于将入射辐射转换成具有半导体层的带隙能量特性的电信号的直接转换半导体层和用于将光耦合到半导体层中的至少一个光源，其中所产生的光用于 入射X射线量子点的模拟具有高于半导体层带隙能量的能量。 一个实施例包括至少一个评估单元，用于根据当光耦合到半导体层中时产生的电信号计算评估信号;以及至少一个校准单元，用于基于评估信号校准至少一个脉冲鉴别器。 这提供了在不使用X射线辐射的情况下考虑到目前的极化状态来快速重复地校准X射线检测器的先决条件。 另一个实施例另外涉及这种X射线检测器的校准方法。
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9.发明授权Direct radiation converter, radiation detector, medical apparatus and method for producing a direct radiation converter 有权直接辐射转换器，放射线检测器，用于生产直接辐射转换器的医疗装置和方法公开(公告)号：US09097810B2
公开(公告)日：2015-08-04
申请号：US13359554
申请日：2012-01-27
IPC分类号： H01L31/102 , G01T1/24 , H01L31/08
CPC分类号： G01T1/24 , H01L31/085
摘要： A direct radiation converter is disclosed which includes a radiation detection material having an anode side and a cathode side in which the radiation detection material has a doping profile running in the anode-side to cathode-side direction. A radiation detector is further disclosed having such a direct radiation converter and having an anode array and a cathode array, and optionally having evaluation electronics for reading out a detector signal, as well as a medical apparatus having such a radiation detector. Also described is a method for producing a direct radiation converter which includes incorporating into a radiation detection material a doping profile running in the anode-side to cathode-side direction.
摘要翻译： 公开了一种直接辐射转换器，其包括具有阳极侧和阴极侧的放射线检测材料，其中放射线检测材料具有在阳极侧至阴极侧方向上运行的掺杂分布。 还公开了具有这种直接辐射转换器并且具有阳极阵列和阴极阵列以及可选地具有用于读出检测器信号的评估电子装置的放射线检测器以及具有这种放射线检测器的医疗装置。 还描述了一种用于生产直接辐射转换器的方法，其包括在辐射检测材料中并入在阳极侧至阴极侧方向上运行的掺杂分布。
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10.发明授权Detector material for a detector for use in CT systems, detector element and detector 有权用于CT系统，检测器元件和检测器的检测器的检测器材料公开(公告)号：US08502156B2
公开(公告)日：2013-08-06
申请号：US13124216
申请日：2009-04-16
IPC分类号： H01L31/0296
CPC分类号： H01L27/14659 , H01L31/0296 , H01L31/115
摘要： A detector material for a detector is disclosed for use in CT systems, particularly in dual-energy CT systems, including a doped semiconductor. In at least one embodiment, the semiconductor is doped with a donator in a concentration, wherein the concentration of the donator corresponds to at least 50% of the maximum solubility thereof in the semiconductor material, and the donator produces flat imperfections having an excitation energy. The flat imperfections can be ionized and can provide additional freely moveable charge carriers. The freely moveable charge carriers can be captured by the spatially separated deep imperfections and thus reduce the number of the charged deep imperfections. In this way, pure time- and radiation-dependent effects, such as polarization, occur more often. The invention further more relates to the use of the detector material in a CT or dual-energy CT system for generating tomographic images of a test object.
摘要翻译： 公开了一种用于检测器的检测器材料，用于CT系统，特别是在包括掺杂半导体的双能CT系统中。 在至少一个实施方案中，半导体以浓度掺入捐赠者，其中捐赠者的浓度对应于其在半导体材料中的最大溶解度的至少50％，并且捐赠者产生具有激发能的平坦缺陷。 扁平的缺陷可以被电离并且可以提供额外的可自由移动的电荷载体。 可自由移动的电荷载体可以通过空间分离的深度缺陷捕获，从而减少带电深度缺陷的数量。 这样，纯粹的时间和辐射依赖的影响，如极化，更经常地发生。 本发明还涉及在用于产生测试对象的断层图像的CT或双能量CT系统中使用检测器材料。
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