Sintered transformer or inductor core of nizn ferrite material
    1.
    发明授权
    Sintered transformer or inductor core of nizn ferrite material 失效
    铁素体烧结变压器或电感芯

    公开(公告)号:US5871662A

    公开(公告)日:1999-02-16

    申请号:US978963

    申请日:1997-11-26

    IPC分类号: H01F1/34 H01F27/255 C04B35/30

    CPC分类号: H01F27/255 H01F1/344

    摘要: The invention describes a transformer core of NiZn ferrite material. Said transformer core exhibits low overall losses when it is used in a transformer. Said low losses are attained if the majority of the grains of the sintered ferrite material have a monodomain structure. This is the case if the average grain size is smaller than 2.8 microns. The average grain size of the sintered material preferably ranges of from 1.3 to 2.6 microns. The .delta.-value is preferably less than 4 nm.

    摘要翻译: 本发明描述了NiZn铁氧体材料的变压器芯。 所述变压器铁芯在变压器中使用时总体损耗较小。 如果烧结铁氧体材料的大部分晶粒具有单畴结构,则可获得所述低损耗。 如果平均晶粒尺寸小于2.8微米,则是这种情况。 烧结材料的平均晶粒尺寸优选为1.3至2.6微米。 Δ值优选小于4nm。

    Method of manufacturing a permanent magnet on the basis of NdFeB
    2.
    发明授权
    Method of manufacturing a permanent magnet on the basis of NdFeB 失效
    基于钕铁硼制造永久磁铁的方法

    公开(公告)号:US6045751A

    公开(公告)日:2000-04-04

    申请号:US105820

    申请日:1993-08-11

    CPC分类号: B22F1/0003 H01F1/0577

    摘要: A description is given of a method of manufacturing a permanent magnet on the basis of NdFeB. In this method a powder of NdFeB and a powder of a Ga alloy, consisting mainly of Ga and one or more than one rare earth metals (RE), is mixed to form a mixture which is subsequently aligned, compressed and sintered. Such alloys can be ground into homogeneous, fine-grain powders in a simple manner. The composition of the alloy preferably corresponds to the formula REGa.sub.x, where x=1 or x=2. Alloys which are very suitable contain Dy and/or Tb as the rare earth metal.

    摘要翻译: 以NdFeB为基础制造永久磁铁的方法进行说明。 在该方法中,将主要由Ga和一种或多于一种稀土金属(RE)组成的NdFeB粉末和Ga合金粉末混合形成随后对准,压缩和烧结的混合物。 这种合金可以以简单的方式研磨成均匀的细粒粉末。 合金的组成优选对应于式REGax,其中x = 1或x = 2。 非常合适的合金含有Dy和/或Tb作为稀土金属。

    Method of manufacturing a semiconductor diode laser
    3.
    发明授权
    Method of manufacturing a semiconductor diode laser 失效
    制造半导体二极管激光器的方法

    公开(公告)号:US5915163A

    公开(公告)日:1999-06-22

    申请号:US759666

    申请日:1996-12-06

    摘要: Method of manufacturing a laser which is provided with a metal layer and a solder layer as early as in the wafer stage, and which is particularly suitable for so-called epi-down final mounting. An individual laser is obtained in that first a block comprising a row of lasers is formed from the wafer by cleaving, and subsequently the individual lasers are separated from the block. Strip-shaped openings are formed in the metal layer at the areas of end faces to be formed before the block is formed, and subsequently a score is provided in the surface of the semiconductor body in each opening in the longitudinal direction thereof, whereupon the solder layer is provided over the metal layer and over at least part of the openings therein, and the block is subsequently formed through cleaving at the areas of and in the direction of the scores.

    摘要翻译: 制造激光器的方法,该激光器早在晶片台设置有金属层和焊料层,并且特别适用于所谓的下放最终安装。 获得单个激光器,其中首先,通过切割从晶片形成包括一排激光器的块,随后将各个激光器与块分离。 在形成块之前在形成的端面区域的金属层中形成带状开口,随后在其长度方向上的每个开口中的半导体本体的表面上设置刻痕,由此焊料 层设置在金属层之上并且在其中的至少部分开口的上方,并且块随后通过在刻痕的方向和区域上的分裂而形成。