公开(公告)号：US20120228260A1

公开(公告)日：2012-09-13

申请号：US13481680

申请日：2012-05-25

申请人： Pietro MONTANINI ,  Giovanna GERMANI ,  Ilaria GELMI ,  Marta MOTTURA

发明人： Pietro MONTANINI ,  Giovanna GERMANI ,  Ilaria GELMI ,  Marta MOTTURA

IPC分类号： B44C1/22 ,  H05H1/24

CPC分类号： H01L21/31144 ,  H01L21/0332 ,  H01L21/0334 ,  H01L21/31116

摘要： The described process allows trenches to be etched in a structure comprising a support substrate and a multilayer, formed on the substrate, for the definition of wave guides of an integrated optical device and comprises a selective plasma attack in the multilayer through a masking structure that leaves uncovered areas of the multilayer corresponding to the trenches to be etched. Such a masking structure is obtained by forming a mask of metallic material on the multilayer that leaves uncovered the areas corresponding to the trenches to be etched and forming a mask of non-metallic material, for example photoresist, on it that leaves uncovered regions comprising at least part of the areas and an edge portion of the mask of metallic material.

摘要翻译： 所描述的工艺允许在包括形成在衬底上的支撑衬底和多层的结构中蚀刻沟槽，用于定义集成光学器件的波导，并且包括通过掩蔽结构在多层中的选择性等离子体侵蚀 对应于要蚀刻的沟槽的多层的未覆盖区域。 这样的掩模结构是通过在多层上形成金属材料掩模而获得的，该多层不会覆盖与待蚀刻的沟槽相对应的区域，并且形成非金属材料（例如光致抗蚀剂）的掩模，其上留下未覆盖的区域， 至少部分区域和金属材料掩模的边缘部分。

公开(公告)号：US20130017676A1

公开(公告)日：2013-01-17

申请号：US13349416

申请日：2012-01-12

申请人： Pietro MONTANINI ,  Marta MOTTURA ,  Giuseppe CROCE

发明人： Pietro MONTANINI ,  Marta MOTTURA ,  Giuseppe CROCE

IPC分类号： H01L21/768 ,  H01L21/265

CPC分类号： H01L29/10 ,  H01L21/26586 ,  H01L21/743 ,  H01L29/1087 ,  H01L29/423 ,  H01L2924/0002 ,  H01L2924/00

摘要： An embodiment of an integrated circuit includes first and second semiconductor layers and a contact region disposed in the second layer. The first semiconductor layer is of a first conductivity, and the second semiconductor layer is disposed over the first layer and has a surface. The contact region is contiguous with the surface, contacts the first layer, includes a first inner conductive portion, and includes an outer conductive portion of the first conductivity. The contact region may extend deeper than conventional contact regions, because where the inner conductive portion is formed from a trench, doping the outer conductive portion via the trench may allow one to implant the dopants more deeply than conventional techniques allow.