Pulse shaper circuit for sense amplifier enable driver
    1.
    发明授权
    Pulse shaper circuit for sense amplifier enable driver 有权
    脉冲整形电路用于读出放大器使能驱动器

    公开(公告)号:US06977530B1

    公开(公告)日:2005-12-20

    申请号:US10771700

    申请日:2004-02-04

    CPC classification number: G11C7/06 G11C2207/065 H03K5/15 H03K2005/00195

    Abstract: A sense amplifier pulse shaping circuit maintains a relationship between a sense amplifier enable signal and a sense amplifier equalization enable signal while disabling equalization prior to evaluation and disabling evaluation prior to equalization. In some embodiments of the present invention, a sense amplifier pulse shaper circuit generates a sense amplifier equalization control signal and a sense amplifier enable signal. The sense amplifier equalization control signal has a rising transition effectively earlier than the rising transition of the sense amplifier enable signal. The sense amplifier enable signal has a falling transition effectively earlier than the falling transition of the sense amplifier equalization control signal. The sense amplifier equalization signal is discharged into the sense amplifier enable signal.

    Abstract translation: 读出放大器脉冲整形电路在感测放大器使能信号和读出放大器均衡使能信号之间保持关系,同时在评估之前禁用均衡并且在均衡之前禁用评估。 在本发明的一些实施例中,读出放大器脉冲整形器电路产生读出放大器均衡控制信号和读出放大器使能信号。 读出放大器均衡控制信号比读出放大器使能信号的上升沿有效地上升。 读出放大器使能信号有效地早于读出放大器均衡控制信号的下降转变。 读出放大器均衡信号被放大到读出放大器使能信号。

    ADVANCED GATE DRIVERS FOR SILICON CARBIDE BIPOLAR JUNCTION TRANSISTORS

    公开(公告)号:US20180367137A1

    公开(公告)日:2018-12-20

    申请号:US15990881

    申请日:2018-05-29

    Abstract: A gate driver circuit comprises a sensor, an amplifier, a regulator and a gate driver. The sensor is configured to sense a collector-emitter voltage and includes a first resistor and a second resistor connected in series, a high voltage diode connected between the series connected first and second resistors and a first capacitor connected parallel to the second resistor. The amplifier is configured to amplify a sensor output voltage and includes a non-inverting operational amplifier controlled by means of a plurality of resistors, a voltage follower connected to an output terminal of the non-inverting operational amplifier through a first diode and a third resistor connected across the first diode and the voltage follower. The regulator is configured to regulate a regulator output voltage based on an amplifier voltage. The gate driver is configured to connect/disconnect the regulator output voltage to the base terminal of the BJT.

    Advanced gate drivers for silicon carbide bipolar junction transistors

    公开(公告)号:US10715135B2

    公开(公告)日:2020-07-14

    申请号:US15990881

    申请日:2018-05-29

    Abstract: A gate driver circuit comprises a sensor, an amplifier, a regulator and a gate driver. The sensor is configured to sense a collector-emitter voltage and includes a first resistor and a second resistor connected in series, a high voltage diode connected between the series connected first and second resistors and a first capacitor connected parallel to the second resistor. The amplifier is configured to amplify a sensor output voltage and includes a non-inverting operational amplifier controlled by means of a plurality of resistors, a voltage follower connected to an output terminal of the non-inverting operational amplifier through a first diode and a third resistor connected across the first diode and the voltage follower. The regulator is configured to regulate a regulator output voltage based on an amplifier voltage. The gate driver is configured to connect/disconnect the regulator output voltage to the base terminal of the BJT.

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