公开(公告)号：US20090173944A1

公开(公告)日：2009-07-09

申请号：US12049362

申请日：2008-03-16

申请人： Po-Lin Chen ,  Ting Hsieh ,  Chun-Nan Lin ,  Wen-Ching Tsai

发明人： Po-Lin Chen ,  Ting Hsieh ,  Chun-Nan Lin ,  Wen-Ching Tsai

IPC分类号： H01L33/00 ,  H01L29/786

CPC分类号： H01L29/4908 ,  H01L29/41733 ,  H01L29/42384 ,  H01L29/458 ,  H01L29/78669

摘要： A thin film transistor (TFT) includes a substrate, a gate, a gate dielectric layer, a channel layer, a source and a drain. The gate and the gate dielectric layer are disposed on the substrate and the gate dielectric layer covers the gate. The channel layer is disposed on the gate dielectric layer over the gate, and the source and the drain are respectively disposed on a portion of the channel layer at both sides of the gate. At least one of the gate, the source and the drain has a lower conductive layer, an upper conductive layer and an intermediate conductive layer located between the lower conductive layer and the upper conductive layer. The material of the lower conductive layer is different from the material of the intermediate conductive layer, and the thickness of the lower conductive layer is less than or equal to about 150 Å.

摘要翻译： 薄膜晶体管（TFT）包括衬底，栅极，栅极电介质层，沟道层，源极和漏极。 栅极和栅极介电层设置在基板上，栅极电介质层覆盖栅极。 沟道层设置在栅极上的栅极介电层上，源极和漏极分别设置在栅极两侧的沟道层的一部分上。 栅极，源极和漏极中的至少一个具有位于下导电层和上导电层之间的下导电层，上导电层和中间导电层。 下导电层的材料与中间导电层的材料不同，下导电层的厚度小于或等于约150。