公开(公告)号：US20240337920A1

公开(公告)日：2024-10-10

申请号：US18332773

申请日：2023-06-12

申请人： Powerchip Semiconductor Manufacturing Corporation

发明人： Kuei Yu Chien ,  Yung Ching Mai ,  Shin-Shing Yeh ,  Chia-Chi Lin ,  Jun-Cheng Lai

IPC分类号： G03F1/36

CPC分类号： G03F1/36 ,  G03F1/26

摘要： A design method of a photomask structure including the following steps is provided. A first layout pattern is provided. An assist pattern is added aside the first layout pattern. An optical proximity correction (OPC) is performed to convert the first layout pattern into a second layout pattern, wherein the assist pattern has an adjacent portion adjacent to the second layout pattern, a first distance between the adjacent portion and the second layout pattern is less than a safety distance, and the safety distance is a distance to prevent the assist pattern from being transferred to a photoresist layer during a lithography process. After the OPC is performed, the adjacent portion is shifted to increase the first distance to a second distance, wherein the second distance is greater than or equal to the safety distance.