公开(公告)号：US20210391451A1

公开(公告)日：2021-12-16

申请号：US17000371

申请日：2020-08-24

申请人： Powerchip Semiconductor Manufacturing Corporation

发明人： Chun-Sheng Chen ,  Yen-Cheng Fang ,  Zih-Han Chen

IPC分类号： H01L29/739 ,  H01L29/06 ,  H01L29/08 ,  H01L29/10 ,  H01L29/40 ,  H01L29/423 ,  H01L29/66

摘要： An insulated gate bipolar transistor (IGBT) structure including a substrate and a first gated PNPN diode is provided. The first gated PNPN diode is located on the substrate. The first gated PNPN diode includes a first gate, a first source/drain extension (SDE) region, and a second SDE region. The first gate is located on the substrate. The first SDE region and the second SDE region are located in the substrate on two sides of the first gate.

公开(公告)号：US11316036B2

公开(公告)日：2022-04-26

申请号：US17000371

申请日：2020-08-24

申请人： Powerchip Semiconductor Manufacturing Corporation

发明人： Chun-Sheng Chen ,  Yen-Cheng Fang ,  Zih-Han Chen

IPC分类号： H01L29/739 ,  H01L29/06 ,  H01L29/66 ,  H01L29/10 ,  H01L29/40 ,  H01L29/423 ,  H01L29/08

摘要： An insulated gate bipolar transistor (IGBT) structure including a substrate and a first gated PNPN diode is provided. The first gated PNPN diode is located on the substrate. The first gated PNPN diode includes a first gate, a first source/drain extension (SDE) region, and a second SDE region. The first gate is located on the substrate. The first SDE region and the second SDE region are located in the substrate on two sides of the first gate.