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    LIGHT SENSOR HAVING IR CUT AND COLOR PASS INTERFERENCE FILTER INTEGRATED ON-CHIP
    1.
    发明申请
    LIGHT SENSOR HAVING IR CUT AND COLOR PASS INTERFERENCE FILTER INTEGRATED ON-CHIP 有权
    具有红外线切割和彩色通道干涉滤光片的光传感器集成片上

    公开(公告)号：US20120187513A1

    公开(公告)日：2012-07-26

    申请号：US13187729

    申请日：2011-07-21

    申请人： Prashanth Holenarsipur ,  Zhihai Wang ,  Nicole Dorene Kerness

    发明人： Prashanth Holenarsipur ,  Zhihai Wang ,  Nicole Dorene Kerness

    IPC分类号： H01L31/0232 ,  H01L31/18

    CPC分类号： H01L27/14625 ,  H01L27/14621 ,  H01L27/14645

    摘要： A light sensor is described that includes an IR cut interference filter and at least one color interference filter integrated on-chip. The light sensor comprises a semiconductor device (e.g., a die) that includes a substrate. Photodetectors are formed in the substrate proximate to the surface of the substrate. An IR cut interference filter is disposed over the photodetectors. The IR cut interference filter is configured to filter infrared light from light received by the light sensor to at least substantially block infrared light from reaching the photodetectors. At least one color interference filter is disposed proximate to the IR cut interference filter. The color interference filter is configured to filter visible light received by the light sensor to pass light in a limited spectrum of wavelengths (e.g., light having wavelengths between a first wavelength and a second wavelength) to at least one of the photo detectors.

    摘要翻译： 描述了一种光传感器，其包括IR切割干涉滤光器和集成在片上的至少一个颜色干涉滤光器。 光传感器包括包括衬底的半导体器件（例如，裸片）。 光电检测器形成在靠近衬底表面的衬底中。 红外截止干涉滤光片设置在光电探测器上。 IR切割干涉滤光器被配置为过滤由光传感器接收的光的红外光，以至少基本上阻挡红外光到达光电检测器。 至少一个颜色干涉滤光器设置在靠近IR切割干涉滤光器处。 颜色干涉滤光器被配置为对由光传感器接收的可见光进行滤光，以将有限的波长范围（例如，具有第一波长和第二波长之间的波长的光）照射到至少一个光检测器。

    Light sensor having IR cut and color pass interference filter integrated on-chip
    2.
    发明授权
    Light sensor having IR cut and color pass interference filter integrated on-chip 有权
    光传感器具有集成在片上的IR切割和色差干涉滤光片

    公开(公告)号：US08624341B2

    公开(公告)日：2014-01-07

    申请号：US13187729

    申请日：2011-07-21

    申请人： Prashanth Holenarsipur ,  Zhihai Wang ,  Nicole Dorene Kerness

    发明人： Prashanth Holenarsipur ,  Zhihai Wang ,  Nicole Dorene Kerness

    IPC分类号： H01L31/0232

    CPC分类号： H01L27/14625 ,  H01L27/14621 ,  H01L27/14645

    摘要： A light sensor is described that includes an IR cut interference filter and at least one color interference filter integrated on-chip. The light sensor comprises a semiconductor device (e.g., a die) that includes a substrate. Photodetectors are formed in the substrate proximate to the surface of the substrate. An IR cut interference filter is disposed over the photodetectors. The IR cut interference filter is configured to filter infrared light from light received by the light sensor to at least substantially block infrared light from reaching the photodetectors. At least one color interference filter is disposed proximate to the IR cut interference filter. The color interference filter is configured to filter visible light received by the light sensor to pass light in a limited spectrum of wavelengths (e.g., light having wavelengths between a first wavelength and a second wavelength) to at least one of the photodetectors.

    摘要翻译： 描述了一种光传感器，其包括IR切割干涉滤光器和集成在片上的至少一个颜色干涉滤光器。 光传感器包括包括衬底的半导体器件（例如，裸片）。 光电检测器形成在靠近衬底表面的衬底中。 红外截止干涉滤光片设置在光电探测器上。 IR切割干涉滤光器被配置为过滤由光传感器接收的光的红外光，以至少基本上阻挡红外光到达光电检测器。 至少一个颜色干涉滤光器设置在靠近IR切割干涉滤光器处。 颜色干涉滤光器被配置为过滤由光传感器接收的可见光，以将有限的波长范围（例如，具有第一波长和第二波长之间的波长的光）照射到至少一个光电检测器。

    Reflective proximity sensor with improved smudge resistance and reduced crosstalk
    3.
    发明授权
    Reflective proximity sensor with improved smudge resistance and reduced crosstalk 有权
    反光接近传感器，具有改善的防污染性和减少串扰

    公开(公告)号：US08507863B2

    公开(公告)日：2013-08-13

    申请号：US13350651

    申请日：2012-01-13

    申请人： Prashanth Holenarsipur

    发明人： Prashanth Holenarsipur

    IPC分类号： G01J5/00

    CPC分类号： G01S17/026 ,  G01S7/4811 ,  G06F1/1684 ,  G06F1/1694 ,  G06F1/182 ,  G06F3/041 ,  G06F2203/04101

    摘要： An electronic device includes a protective layer above a proximity sensor having a radiation emitter and a radiation detector. A groove, which may be wedge shaped, is formed in the bottom surface of the protective layer. A radiation barrier, which may be reflective or absorptive material, is placed in the groove in the bottom surface of the protective layer. A light blocking coating may be applied to the bottom surface and the groove of the protective layer to prevent the passage of visible radiation and permit the passage of infrared radiation. A radiation shield may be positioned between the emitter and the detector directly below the radiation barrier. Alignment features may be formed on the mating surfaces of the radiation barrier and radiation shield to align the protective layer with respect to the radiation shield and proximity sensor.

    摘要翻译： 电子设备包括在具有辐射发射器和辐射探测器的接近传感器之上的保护层。 在保护层的底面形成有可以是楔形的槽。 可以是反射或吸收材料的辐射屏障被放置在保护层的底表面中的凹槽中。 可以将遮光涂层施加到保护层的底表面和凹槽，以防止可见光辐射通过并允许红外辐射通过。 辐射屏蔽可以位于辐射屏障正下方的发射器和检测器之间。 对准特征可以形成在辐射屏障和辐射屏蔽的配合表面上，以使保护层相对于辐射屏蔽和接近传感器对准。

    REFLECTIVE PROXIMITY SENSOR WITH IMPROVED SMUDGE RESISTANCE AND REDUCED CROSSTALK
    5.
    发明申请
    REFLECTIVE PROXIMITY SENSOR WITH IMPROVED SMUDGE RESISTANCE AND REDUCED CROSSTALK 有权
    具有改进的抗电抗性和降低CROSSTALK的反射接近传感器

    公开(公告)号：US20130181131A1

    公开(公告)日：2013-07-18

    申请号：US13350651

    申请日：2012-01-13

    申请人： Prashanth Holenarsipur

    发明人： Prashanth Holenarsipur

    IPC分类号： G01J5/10

    CPC分类号： G01S17/026 ,  G01S7/4811 ,  G06F1/1684 ,  G06F1/1694 ,  G06F1/182 ,  G06F3/041 ,  G06F2203/04101

    摘要： An electronic device includes a protective layer above a proximity sensor having a radiation emitter and a radiation detector. A groove, which may be wedge shaped, is formed in the bottom surface of the protective layer. A radiation barrier, which may be reflective or absorptive material, is placed in the groove in the bottom surface of the protective layer. A light blocking coating may be applied to the bottom surface and the groove of the protective layer to prevent the passage of visible radiation and permit the passage of infrared radiation. A radiation shield may be positioned between the emitter and the detector directly below the radiation barrier. Alignment features may be formed on the mating surfaces of the radiation barrier and radiation shield to align the protective layer with respect to the radiation shield and proximity sensor.

    摘要翻译： 电子设备包括在具有辐射发射器和辐射探测器的接近传感器之上的保护层。 在保护层的底面形成有可以是楔形的槽。 可以是反射或吸收材料的辐射屏障被放置在保护层的底表面中的凹槽中。 可以将遮光涂层施加到保护层的底表面和凹槽，以防止可见光辐射通过并允许红外辐射通过。 辐射屏蔽可以位于辐射屏障正下方的发射器和检测器之间。 对准特征可以形成在辐射屏障和辐射屏蔽的配合表面上，以使保护层相对于辐射屏蔽和接近传感器对准。