公开(公告)号：US20020197875A1

公开(公告)日：2002-12-26

申请号：US09886361

申请日：2001-06-21

申请人： Prime View International Co., Ltd.

发明人： Wen-Jian Lin ,  Hung-Heui Hsu

IPC分类号： H01L021/311

CPC分类号： H01L29/42384 ,  H01L21/32134 ,  H01L29/4908

摘要： Disclosed is a method for controlling profile formation of low taper angle in metal thin film electrode applicable to manufacture of thin film transistor liquid crystal display in order for insulator capably deposited on the metal thin film electrode with good step coverage, by which a double-layer structure for metal electrode is formed with two metals on a substrate and then etched with a wet etching solution having a higher etching rate to the upper layer metal than that to the lower layer metal of the double-layer structure. By employing different etching rate and thickness to the double-layer metals, a metal electrode is formed with a very low taper angle and thus can be deposited with insulator of good step coverage thereon.

摘要翻译： 公开了一种用于控制适用于制造薄膜晶体管液晶显示器的金属薄膜电极中的低锥角的轮廓形成的方法，以便可靠地沉积在具有良好阶梯覆盖的金属薄膜电极上的绝缘体，通过该双层 金属电极的结构在基板上由两种金属形成，然后用比双层结构的下层金属具有比上层金属蚀刻速率更高的湿蚀刻溶液蚀刻。 通过对双层金属采用不同的蚀刻速率和厚度，形成具有非常低的锥角的金属电极，因此可以在其上沉积具有良好阶梯覆盖的绝缘体。