摘要:
A structure of a thin film transistor (TFT) liquid crystal display (LCD) device including plural conductive beads and a manufacturing method thereof are provided. The manufacturing method includes the steps of (a) providing an insulated substrate, (b) forming a TFT structure and a transparent electrode structure on the insulated substrate wherein the transparent electrode structure is connected to a source/drain region of the TFT structure, and (c) forming a thin film structure including plural conductive beads on the transparent electrode structure.
摘要:
A method for fabricating an interference display unit is provided. A first plate and a sacrificial layer are formed in order on a substrate and at least two openings are formed in the first plate and the sacrificial layer. A photoresist layer is spin-coated on the sacrificial layer and fills the openings. A photolithographic process patterns the photoresist layer to define a support with an arm. A second plate is formed on the sacrificial layer and posts. The arm's stress is released through a thermal process. The position of the arm is shifted and the distance between the first plate and the second plate is therefore defined. Finally, The sacrificial layer is removed.
摘要:
Disclosed is a method for controlling profile formation of low taper angle in metal thin film electrode applicable to manufacture of thin film transistor liquid crystal display in order for insulator capably deposited on the metal thin film electrode with good step coverage, by which a double-layer structure for metal electrode is formed with two metals on a substrate and then etched with a wet etching solution having a higher etching rate to the upper layer metal than that to the lower layer metal of the double-layer structure. By employing different etching rate and thickness to the double-layer metals, a metal electrode is formed with a very low taper angle and thus can be deposited with insulator of good step coverage thereon.
摘要:
Disclosed is a metal contact structure and method for thin film transistor array in liquid crystal display in order to prevent source/drain electrode metal layer from plasma damage and oxide insulator formation thereon during contact hole process, such that low contact resistance is obtained between the source/drain electrode metal layer and top-ITO conductive layer, wherein a thin film transistor structure is formed on a substrate and a metal oxide conductive film is covered on the source/drain electrode metal layer of the thin film transistor structure before an insulative passivation layer is deposited over the thin film transistor structure. During the passivation layer is etched to form contact hole for the source/drain electrode metal layer to contact with the top-ITO conductive layer thereafter formed, the metal oxide conductive film prevents the underlying source/drain electrode metal layer from plasma damage and oxide insulator formation thereon, thereby obtaining good contact between the source/drain electrode metal layer and the top-ITO conductive layer.
摘要:
An optical interference display plate at least comprises a light-incidence electrode and a light-reflection electrode. The light-incidence electrode at least comprises an absorption layer and a dielectric layer. A material of the absorption layer does not comprises metallic material.
摘要:
A structure of a thin film transistor (TFT) liquid crystal display (LCD) device with a convex structure and a manufacturing method thereof are provided. The manufacturing method includes steps of: providing an insulation substrate; forming a first conductor layer on the insulation substrate; removing portions of the first conductor layer to define a first conductor structure and a first convex structure, wherein the first convex structure is posited on an area of pixel; forming an insulation layer and a semiconductor layer sequentially on the first conductor structure and the insulation substrate having the first conductor layer; removing portions of the semiconductor layer to define a semiconductor structure; forming a second conductor layer on the semiconductor structure; and removing portions of the second conductor layer to define a second conductor structure.
摘要:
An optical-interference type display panel and a method for making the same are disclosed, wherein the display panel has a substrate on which multiple first conductive optical film stacks, supporting layers and multiple second conductive optical film stacks are formed. The substrate further has a plurality of connecting pads consisting of a transparent conductive film of the first conductive optical film stacks. Since the transparent conductive film is made of indium tin oxide, these connecting pads have the excellent anti-oxidation ability at their surface.
摘要:
An optical-interference type reflective panel and a method for making the same are disclosed, wherein the display panel has a substrate on which multiple supporting layers are firstly formed. Then, a plurality of first conductive optical film stacks, spacing layers and multiple second conductive optical film stacks are sequentially formed on the substrate. Finally, once the spacing layers are removed, optical-interference regulators are formed. Since said supporting layers forming step is prior to the first conductive optical film stacks, a precise back-side exposing step is not necessary so that the making procedure of the panel is simplified.
摘要:
There is provided a reflection type/transflection type thin film transistor liquid crystal display, including an insulating substrate, a thin film transistor formed on the insulating substrate, a transparent electrode made of indium-tin-oxide formed on the thin film transistor and electrically contacted with a source region and a drain region of the thin film transistor, and a curved conducting structure with an inclination of 3 to 20 degrees formed on the transparent electrode.
摘要:
A structure of a structure release and a manufacturing method are provided. The structure and manufacturing method are adapted for an interference display cell. The structure of the interference display cell includes a first electrode, a second electrode and at least one supporter. The second electrode has at least one hole and is arranged about parallel with the first electrode. The supporter is located between the first electrode and the second electrode and a cavity is formed. In the release etch process of manufacturing the structure, an etchant can pass through the hole to etch a sacrificial layer between the first and the second electrodes to form the cavity; therefore, the time needed for the process becomes shorter.