Thin film transistor crystal liquid display device including plural conductive beads and manufacturing method thereof
    1.
    发明申请
    Thin film transistor crystal liquid display device including plural conductive beads and manufacturing method thereof 有权
    包括多个导电珠的薄膜晶体管晶体液晶显示装置及其制造方法

    公开(公告)号:US20030058378A1

    公开(公告)日:2003-03-27

    申请号:US10228981

    申请日:2002-08-27

    IPC分类号: G02F001/136

    CPC分类号: G02F1/133553 G02F1/133555

    摘要: A structure of a thin film transistor (TFT) liquid crystal display (LCD) device including plural conductive beads and a manufacturing method thereof are provided. The manufacturing method includes the steps of (a) providing an insulated substrate, (b) forming a TFT structure and a transparent electrode structure on the insulated substrate wherein the transparent electrode structure is connected to a source/drain region of the TFT structure, and (c) forming a thin film structure including plural conductive beads on the transparent electrode structure.

    摘要翻译: 提供了包括多个导电珠的薄膜晶体管(TFT)液晶显示器(LCD)器件的结构及其制造方法。 制造方法包括以下步骤:(a)提供绝缘基板,(b)在绝缘基板上形成TFT结构和透明电极结构,其中透明电极结构连接到TFT结构的源极/漏极区域,以及 (c)在透明电极结构上形成包括多个导电珠的薄膜结构。

    Method for fabricating an interference display unit
    2.
    发明申请
    Method for fabricating an interference display unit 有权
    制造干涉显示单元的方法

    公开(公告)号:US20040209192A1

    公开(公告)日:2004-10-21

    申请号:US10705824

    申请日:2003-11-13

    IPC分类号: G03C005/00

    摘要: A method for fabricating an interference display unit is provided. A first plate and a sacrificial layer are formed in order on a substrate and at least two openings are formed in the first plate and the sacrificial layer. A photoresist layer is spin-coated on the sacrificial layer and fills the openings. A photolithographic process patterns the photoresist layer to define a support with an arm. A second plate is formed on the sacrificial layer and posts. The arm's stress is released through a thermal process. The position of the arm is shifted and the distance between the first plate and the second plate is therefore defined. Finally, The sacrificial layer is removed.

    摘要翻译: 提供一种制造干涉显示单元的方法。 在基板上依次形成第一板和牺牲层,并且在第一板和牺牲层中形成至少两个开口。 将光致抗蚀剂层旋涂在牺牲层上并填充开口。 光刻工艺使光致抗蚀剂图案形成具有臂的支撑。 在牺牲层和柱上形成第二板。 手臂的压力通过热过程释放。 臂的位置移动,因此限定了第一板和第二板之间的距离。 最后,牺牲层被去除。

    Method for controlling profile formation of low taper angle in metal thin film electorde
    3.
    发明申请
    Method for controlling profile formation of low taper angle in metal thin film electorde 审中-公开
    控制金属薄膜电极中锥角低的方法

    公开(公告)号:US20020197875A1

    公开(公告)日:2002-12-26

    申请号:US09886361

    申请日:2001-06-21

    IPC分类号: H01L021/311

    摘要: Disclosed is a method for controlling profile formation of low taper angle in metal thin film electrode applicable to manufacture of thin film transistor liquid crystal display in order for insulator capably deposited on the metal thin film electrode with good step coverage, by which a double-layer structure for metal electrode is formed with two metals on a substrate and then etched with a wet etching solution having a higher etching rate to the upper layer metal than that to the lower layer metal of the double-layer structure. By employing different etching rate and thickness to the double-layer metals, a metal electrode is formed with a very low taper angle and thus can be deposited with insulator of good step coverage thereon.

    摘要翻译: 公开了一种用于控制适用于制造薄膜晶体管液晶显示器的金属薄膜电极中的低锥角的轮廓形成的方法,以便可靠地沉积在具有良好阶梯覆盖的金属薄膜电极上的绝缘体,通过该双层 金属电极的结构在基板上由两种金属形成,然后用比双层结构的下层金属具有比上层金属蚀刻速率更高的湿蚀刻溶液蚀刻。 通过对双层金属采用不同的蚀刻速率和厚度,形成具有非常低的锥角的金属电极,因此可以在其上沉积具有良好阶梯覆盖的绝缘体。

    Metal contact structure and method for thin film transistor array in liquid crystal display
    4.
    发明申请
    Metal contact structure and method for thin film transistor array in liquid crystal display 有权
    液晶显示器薄膜晶体管阵列的金属接触结构及方法

    公开(公告)号:US20020109796A1

    公开(公告)日:2002-08-15

    申请号:US09780774

    申请日:2001-02-09

    IPC分类号: G02F001/1343

    摘要: Disclosed is a metal contact structure and method for thin film transistor array in liquid crystal display in order to prevent source/drain electrode metal layer from plasma damage and oxide insulator formation thereon during contact hole process, such that low contact resistance is obtained between the source/drain electrode metal layer and top-ITO conductive layer, wherein a thin film transistor structure is formed on a substrate and a metal oxide conductive film is covered on the source/drain electrode metal layer of the thin film transistor structure before an insulative passivation layer is deposited over the thin film transistor structure. During the passivation layer is etched to form contact hole for the source/drain electrode metal layer to contact with the top-ITO conductive layer thereafter formed, the metal oxide conductive film prevents the underlying source/drain electrode metal layer from plasma damage and oxide insulator formation thereon, thereby obtaining good contact between the source/drain electrode metal layer and the top-ITO conductive layer.

    摘要翻译: 公开了一种液晶显示器中的薄膜晶体管阵列的金属接触结构和方法,以便在接触孔工艺期间防止源/漏电极金属层等离子体损伤和其上形成氧化物绝缘体,从而在源极之间获得低的接触电阻 漏极电极金属层和顶部ITO导电层,其中在基板上形成薄膜晶体管结构,并且在绝缘钝化层之前,在薄膜晶体管结构的源极/漏极金属层上覆盖金属氧化物导电膜 沉积在薄膜晶体管结构上。 在钝化层被蚀刻以形成用于源极/漏极金属层与其后形成的顶部ITO导电层接触的接触孔时,金属氧化物导电膜防止下面的源极/漏极金属层受到等离子体损伤和氧化物绝缘体 从而在源极/漏极金属层和顶部ITO导电层之间获得良好的接触。

    Thin film transistor crystal liquid display devices with convex structure and manufacturing method thereof
    6.
    发明申请
    Thin film transistor crystal liquid display devices with convex structure and manufacturing method thereof 审中-公开
    具有凸起结构的薄膜晶体管晶体液晶显示器件及其制造方法

    公开(公告)号:US20030089949A1

    公开(公告)日:2003-05-15

    申请号:US10138626

    申请日:2002-05-03

    摘要: A structure of a thin film transistor (TFT) liquid crystal display (LCD) device with a convex structure and a manufacturing method thereof are provided. The manufacturing method includes steps of: providing an insulation substrate; forming a first conductor layer on the insulation substrate; removing portions of the first conductor layer to define a first conductor structure and a first convex structure, wherein the first convex structure is posited on an area of pixel; forming an insulation layer and a semiconductor layer sequentially on the first conductor structure and the insulation substrate having the first conductor layer; removing portions of the semiconductor layer to define a semiconductor structure; forming a second conductor layer on the semiconductor structure; and removing portions of the second conductor layer to define a second conductor structure.

    摘要翻译: 提供具有凸结构的薄膜晶体管(TFT)液晶显示器(LCD)器件及其制造方法的结构。 该制造方法包括以下步骤:提供绝缘基板; 在所述绝缘基板上形成第一导体层; 去除第一导体层的部分以限定第一导体结构和第一凸起结构,其中第一凸起结构被放置在像素的区域上; 在第一导体结构和具有第一导体层的绝缘基板上依次形成绝缘层和半导体层; 去除半导体层的部分以限定半导体结构; 在所述半导体结构上形成第二导体层; 以及去除所述第二导体层的部分以限定第二导体结构。

    Optical-interference type display panel and method for making the same
    7.
    发明申请
    Optical-interference type display panel and method for making the same 有权
    光干涉式显示面板及其制造方法

    公开(公告)号:US20040147198A1

    公开(公告)日:2004-07-29

    申请号:US10752666

    申请日:2004-01-08

    IPC分类号: H01J009/00

    CPC分类号: G02B26/001

    摘要: An optical-interference type display panel and a method for making the same are disclosed, wherein the display panel has a substrate on which multiple first conductive optical film stacks, supporting layers and multiple second conductive optical film stacks are formed. The substrate further has a plurality of connecting pads consisting of a transparent conductive film of the first conductive optical film stacks. Since the transparent conductive film is made of indium tin oxide, these connecting pads have the excellent anti-oxidation ability at their surface.

    摘要翻译: 公开了一种光干涉型显示面板及其制造方法,其中显示面板具有形成有多个第一导电光学膜叠层,支撑层和多个第二导电光学膜叠层的基板。 基板还具有由第一导电光学膜叠层的透明导电膜构成的多个连接焊盘。 由于透明导电膜由氧化铟锡制成,这些连接焊盘在其表面具有优异的抗氧化能力。

    Optical-interference type reflective panel and method for making the same
    8.
    发明申请
    Optical-interference type reflective panel and method for making the same 有权
    光干涉型反射板及其制造方法

    公开(公告)号:US20040145811A1

    公开(公告)日:2004-07-29

    申请号:US10752811

    申请日:2004-01-08

    IPC分类号: G02B001/10

    CPC分类号: G02B5/288 G02B26/001

    摘要: An optical-interference type reflective panel and a method for making the same are disclosed, wherein the display panel has a substrate on which multiple supporting layers are firstly formed. Then, a plurality of first conductive optical film stacks, spacing layers and multiple second conductive optical film stacks are sequentially formed on the substrate. Finally, once the spacing layers are removed, optical-interference regulators are formed. Since said supporting layers forming step is prior to the first conductive optical film stacks, a precise back-side exposing step is not necessary so that the making procedure of the panel is simplified.

    摘要翻译: 公开了一种光干涉型反射板及其制造方法,其中显示面板具有首先形成有多个支撑层的基板。 然后,在衬底上依次形成多个第一导电光学膜堆叠,间隔层和多个第二导电光学膜堆叠。 最后,一旦间隔层被去除,就形成光干涉调节器。 由于所述支撑层形成步骤在第一导电光学膜堆叠之前,因此不需要精确的背面曝光步骤,从而简化了面板的制作步骤。

    Thin film transistor liquid crystal display and method for manufacturing the same
    9.
    发明申请
    Thin film transistor liquid crystal display and method for manufacturing the same 有权
    薄膜晶体管液晶显示器及其制造方法

    公开(公告)号:US20030038899A1

    公开(公告)日:2003-02-27

    申请号:US10139852

    申请日:2002-05-07

    发明人: Wen-Jian Lin

    IPC分类号: G02F001/136

    CPC分类号: G02F1/133553

    摘要: There is provided a reflection type/transflection type thin film transistor liquid crystal display, including an insulating substrate, a thin film transistor formed on the insulating substrate, a transparent electrode made of indium-tin-oxide formed on the thin film transistor and electrically contacted with a source region and a drain region of the thin film transistor, and a curved conducting structure with an inclination of 3 to 20 degrees formed on the transparent electrode.

    摘要翻译: 提供一种反射型/转换型薄膜晶体管液晶显示器,包括绝缘基板,形成在绝缘基板上的薄膜晶体管,形成在薄膜晶体管上的由氧化铟锡形成的透明电极,并电接触 具有薄膜晶体管的源极区域和漏极区域,以及在透明电极上形成具有3至20度倾斜度的弯曲导电结构。

    Structure of a structure release and a method for manufacturing the same
    10.
    发明申请
    Structure of a structure release and a method for manufacturing the same 失效
    结构释放的结构及其制造方法

    公开(公告)号:US20040240027A1

    公开(公告)日:2004-12-02

    申请号:US10725585

    申请日:2003-12-03

    IPC分类号: G02F001/03 G02F001/07

    CPC分类号: G02B26/001

    摘要: A structure of a structure release and a manufacturing method are provided. The structure and manufacturing method are adapted for an interference display cell. The structure of the interference display cell includes a first electrode, a second electrode and at least one supporter. The second electrode has at least one hole and is arranged about parallel with the first electrode. The supporter is located between the first electrode and the second electrode and a cavity is formed. In the release etch process of manufacturing the structure, an etchant can pass through the hole to etch a sacrificial layer between the first and the second electrodes to form the cavity; therefore, the time needed for the process becomes shorter.

    摘要翻译: 提供了结构释放的结构和制造方法。 该结构和制造方法适用于干涉显示单元。 干涉显示单元的结构包括第一电极,第二电极和至少一个支撑件。 第二电极具有至少一个孔并且与第一电极大致平行地布置。 支撑件位于第一电极和第二电极之间,并且形成空腔。 在制造结构的释放蚀刻工艺中,蚀刻剂可以穿过该孔以蚀刻第一和第二电极之间的牺牲层以形成空腔; 因此,该过程所需的时间变短。