公开(公告)号：US20020182862A1

公开(公告)日：2002-12-05

申请号：US09999453

申请日：2001-12-03

Applicant: ProMOS Technologies, Inc.

Inventor： Shi-Chung Sun ,  Hao-Yi Tsai

IPC: C23C014/32 ,  H01L021/44

CPC classification number: H01L21/76843 ,  H01L21/2855 ,  H01L21/76864 ,  H01L23/485 ,  H01L2924/0002 ,  H01L2924/00

Abstract: A new method of forming a tantalum carbide nitride diffusion barrier layer having optimized nitrogen concentration for improved thermal stability is described. A contact region is provided in a substrate. A via is opened through an insulating layer to the contact region. A tantalum carbide nitride barrier layer is deposited within the via wherein the tantalum carbide nitride layer has an optimized nitrogen content of between about 17% and 24% by atomic percentage. A layer of copper is deposited overlying the tantalum carbide nitride barrier layer to complete copper metallization in the fabrication of an integrated circuit device.

Abstract translation: 描述了一种形成具有优化的氮浓度以改善热稳定性的碳化钽氮化物扩散阻挡层的新方法。 接触区域设置在基板中。 通孔通过绝缘层打开到接触区域。 在通孔内沉积氮化钽氮化物阻挡层，其中碳化钽氮化物层具有约17％至24％原子百分比的最佳氮含量。 沉积在碳化钽氮化物阻挡层上的铜层，以在集成电路器件的制造中完成铜金属化。