公开(公告)号：US20040090734A1

公开(公告)日：2004-05-13

申请号：US10331612

申请日：2002-12-31

Applicant: ProMos Technologies, Inc.

Inventor： Yu-Ying Lian

IPC: H01G004/228

CPC classification number: H01L28/91 ,  H01L27/10829 ,  H01L27/10861 ,  H01L27/1087 ,  H01L29/66181

Abstract: A trench capacitor includes an electrode having a first conductive area formed in a trench provided in a substrate, and a second conductive area extending from a bottom of the trench, the second conductive area being electrically coupled to the first conductive area and spaced apart from the first conductive area; a storage node having a first conductive extension extending into a first dielectric space provided between the first conductive area and the second conductive area of the electrode, and a second conductive extension extending into a second dielectric space provided within the second conductive area of the electrode; and a dielectric layer electrically insulating the electrode from the storage node.

Abstract translation: 沟槽电容器包括电极，其具有形成在设置在基板中的沟槽中的第一导电区域和从沟槽的底部延伸的第二导电区域，第二导电区域电耦合到第一导电区域并与 第一导电区; 存储节点具有延伸到设置在电极的第一导电区域和第二导电区域之间的第一电介质空间的第一导电延伸部分，以及延伸到设置在电极的第二导电区域内的第二电介质空间的第二导电延伸部分; 以及将电极与存储节点电绝缘的电介质层。