公开(公告)号：US20030143849A1

公开(公告)日：2003-07-31

申请号：US10393975

申请日：2003-03-24

Applicant: ProMos Technologies Inc.

Inventor： Ming-Cheng Yang ,  Jiun-Fang Wang

IPC: H01L021/302 ,  H01L021/461

CPC classification number: H01L21/3212 ,  H01L21/76829 ,  H01L21/7684

Abstract: A method for avoiding defects produced in The CMP process has the following steps: sequentially depositing a first dielectric layer and a second dielectric layer on a semiconductor substrate, wherein the wet-etching rate of the first dielectric layer is greater than the wet-etching rate of the second dielectric layer; forming a plurality of first holes on a plurality of the predetermined contact window areas respectively; wet etching the first dielectric layer in each of the first holes to form a plurality of second holes on the plurality of the predetermined contact window areas respectively; forming a conductive layer to fill each of the second holes; and performing the CMP process to level off the conductive layer and the second dielectric layer.

公开(公告)号：US20030049935A1

公开(公告)日：2003-03-13

申请号：US10218626

申请日：2002-08-15

Applicant: PROMOS TECHNOLOGIES INC.

Inventor： Hou-Hong Chou ,  Jiun-Fang Wang

IPC: H01L021/302 ,  H01L021/461

CPC classification number: B08B1/04 ,  B08B3/08 ,  H01L21/02052 ,  H01L21/31053 ,  H01L21/31105

Abstract: The present invention provides a method of removing residual particles from a polished surface. The method comprises the steps of: providing a substrate, forming a dielectric layer on the substrate, brush-cleaning and etching the dielectric layer on the substrate with a liquid when residual particles are lodged therein, whereby the residual particles are loosened and then relocated to the dielectric layer, and finally cleaning the dielectric layer to remove the relocated residual particles.

Abstract translation: 本发明提供从抛光表面除去残留颗粒的方法。 该方法包括以下步骤：提供衬底，在衬底上形成电介质层，当剩余颗粒沉积在其中时，用液体刷洗和蚀刻衬底上的电介质层，由此残留的颗粒松动然后重新定位到 介电层，最后清洁电介质层以除去重新定位的残留颗粒。