公开(公告)号：US11749487B2

公开(公告)日：2023-09-05

申请号：US17701298

申请日：2022-03-22

Applicant: Purdue Research Foundation

Inventor： Saeed Mohammadi ,  Shabnam Ghotbi

IPC: H01J21/20

CPC classification number: H01J21/20

Abstract: A field emitter array (FEA) vacuum transistor is disclosed which includes a substrate and a plurality of nanorods formed of a first polarity dopant on the substrate, wherein the dopant density is between about 1013 cm−3 to about 1015 cm−3.

公开(公告)号：US12080506B2

公开(公告)日：2024-09-03

申请号：US18242185

申请日：2023-09-05

Applicant: Purdue Research Foundation

Inventor： Saeed Mohammadi ,  Shabnam Ghotbi

IPC: H01J21/20

CPC classification number: H01J21/20

Abstract: A field emitter array (FEA) vacuum transistor is disclosed which includes a substrate and a plurality of nanorods formed of a first polarity dopant on the substrate.

公开(公告)号：US20220301805A1

公开(公告)日：2022-09-22

申请号：US17701298

申请日：2022-03-22

Applicant: Purdue Research Foundation

Inventor： Saeed Mohammadi ,  Shabnam Ghotbi

IPC: H01J21/20

Abstract: A field emitter array (FEA) vacuum transistor is disclosed which includes a substrate and a plurality of nanorods formed of a first polarity dopant on the substrate, wherein the dopant density is between about 1013 cm−3 to about 1015 cm−3.