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    Perforated MOS Structure for Single Biomolecule Detection
    3.
    发明申请
    Perforated MOS Structure for Single Biomolecule Detection 有权
    单生物分子检测的穿孔MOS结构

    公开(公告)号：US20150083597A1

    公开(公告)日：2015-03-26

    申请号：US14497864

    申请日：2014-09-26

    Applicant: Purdue Research Foundation

    Inventor： Saeed Mohammadi ,  Mojgan Sarmadi ,  Hossein Pajouhi

    IPC: G01N27/414 ,  G01N33/487

    CPC classification number: G01N27/4145 ,  G01N33/48721

    Abstract: A perforated metal oxide semiconductor (MOS) structure for single biomolecule, virus, or single cell detection is disclosed. The structure includes a nanochannel formed through a sensing region configured to allow a solution containing particles to pass through the perforated MOS sensor. First and second terminals are configured to measure electrical parameters representative of change of electrical characteristics of the solution as the particle passes through the perforated MOS structure.

    Abstract translation: 公开了用于单一生物分子，病毒或单细胞检测的穿孔金属氧化物半导体（MOS）结构。 该结构包括通过感测区域形成的纳米通道，其被配置为允许含有颗粒的溶液通过穿孔的MOS传感器。 第一和第二端子被配置为测量代表当颗粒通过穿孔的MOS结构时溶液的电特性变化的电参数。

    NANOELECTROMECHANICAL RESONATORS
    5.
    发明申请
    NANOELECTROMECHANICAL RESONATORS 审中-公开
    纳米电子谐振器

    公开(公告)号：US20140203796A1

    公开(公告)日：2014-07-24

    申请号：US13968836

    申请日：2013-08-16

    Applicant: Purdue Research Foundation

    Inventor： Saeed Mohammadi ,  Hossein Pajouhi ,  Jeffrey Frederick Rhoads ,  Lin Yu

    IPC: H01L27/12 ,  G01R19/00 ,  H01L29/02

    CPC classification number: H01L27/1203 ,  B82Y10/00 ,  B82Y15/00 ,  H01L29/0673 ,  H01L29/16 ,  H01L29/775 ,  H03H3/0072 ,  H03H3/0073 ,  H03H9/02409 ,  H03H9/2463 ,  H03H2009/02314

    Abstract: A silicon device, e.g., a nanoelectromechanical resonator, has a silicon substrate; an oxide layer having a trench therein; a silicon device layer over the oxide layer; and a nanowire disposed at least partly over the trench. Substantially no oxide or polysilicon is over the nanowire in the trench. A polyimide layer over the silicon device layer includes an opening over the trench. A silicon device can include silicon-on-insulator layers and at least one complementary metal-oxide semiconductor transistor in addition to a nanowire substantially suspended over a trench. A system for measurement of a nanoresonator includes an AC source in series with the nanoresonator to provide an electrical signal thereto at a selected first frequency. Electrode(s) adjacent to and spaced apart from the nanoresonator are driven by voltage source. A detector detects a current through the nanoresonator.

    Abstract translation: 硅器件，例如纳米机电谐振器，具有硅衬底; 其中具有沟槽的氧化物层; 氧化物层上的硅器件层; 以及至少部分地布置在沟槽上的纳米线。 在沟槽中的纳米线上基本上没有氧化物或多晶硅。 硅器件层上的聚酰亚胺层包括在沟槽上的开口。 除了基本上悬在沟槽上的纳米线之外，硅器件可以包括绝缘体上硅层和至少一个互补金属氧化物半导体晶体管。 纳米谐振器的测量系统包括与纳米谐振器串联的AC源，以选定的第一频率向其提供电信号。 与纳米谐振器相邻并间隔开的电极由电压源驱动。 检测器检测通过纳米谐振器的电流。

    Silicon-on-insulator high power amplifiers
    6.
    发明授权
    Silicon-on-insulator high power amplifiers 有权
    绝缘体上的绝缘体大功率放大器

    公开(公告)号：US09190269B2

    公开(公告)日：2015-11-17

    申请号：US13797111

    申请日：2013-03-12

    Applicant: Purdue Research Foundation

    Inventor： Saeed Mohammadi ,  Sultan R. Helmi ,  Jing-Hwa Chen ,  Hossein Pajouhi

    IPC: H03F3/16 ,  H03F3/14 ,  H01L21/02 ,  H03F3/21 ,  H03F3/42 ,  H03F3/45 ,  H03F1/02 ,  H01L27/12

    CPC classification number: H01L21/0254 ,  H01L27/1203 ,  H03F1/0272 ,  H03F3/21 ,  H03F3/426 ,  H03F3/45179 ,  H03F2200/537 ,  H03F2203/45394 ,  H03F2203/45731

    Abstract: Illustrative embodiments of power amplifiers and associated methods are disclosed. In at least one embodiment, a method may include fabricating a power amplifier in a first silicon layer of a silicon-on-insulator (SOI) substrate, wherein the SOI substrate comprises the first silicon layer, a second silicon layer, and a buried oxide layer disposed between the first and second silicon layers; removing at least some of the second silicon layer from the SOI substrate, after fabricating the power amplifier; and securing the SOI substrate, after removing at least some of the second silicon layer, to an electrically non-conductive and thermally conductive substrate.

    Abstract translation: 公开了功率放大器和相关方法的说明性实施例。 在至少一个实施例中，一种方法可以包括在绝缘体上硅（SOI）衬底的第一硅层中制造功率放大器，其中SOI衬底包括第一硅层，第二硅层和掩埋氧化物 层，设置在第一和第二硅层之间; 在制造功率放大器之后，从SOI衬底去除至少一些第二硅层; 以及在将至少一些所述第二硅层去除之后将所述SOI衬底固定到非导电和导热的基底上。

    Silicon-on-insulator high power amplifiers
    7.
    发明授权
    Silicon-on-insulator high power amplifiers 有权
    绝缘体上的绝缘体大功率放大器

    公开(公告)号：US08558619B2

    公开(公告)日：2013-10-15

    申请号：US13733889

    申请日：2013-01-04

    Applicant: Purdue Research Foundation

    Inventor： Saeed Mohammadi ,  Sultan R. Helmi ,  Jing-Hwa Chen ,  Andrew J. Robison

    IPC: H03F3/16

    CPC classification number: H03F3/426 ,  H01L27/1203 ,  H03F1/0272 ,  H03F3/21 ,  H03F3/45179 ,  H03F2200/537 ,  H03F2203/45394 ,  H03F2203/45731

    Abstract: Illustrative embodiments of power amplifiers are disclosed. In one embodiment, a power amplifier includes a plurality of transistors formed on a silicon-on-insulator (SOI) substrate such that the plurality of transistors are each electrically isolated from one another within the SOI substrate. The power amplifier also includes a plurality of biasing networks, each biasing network being configured to dynamically bias at least one of the plurality of transistors. The plurality of transistors are electrically coupled in a series stack, with an output of the power amplifier being provided across the series stack.

    Abstract translation: 公开了功率放大器的说明性实施例。 在一个实施例中，功率放大器包括形成在绝缘体上硅（SOI）衬底上的多个晶体管，使得多个晶体管在SOI衬底内彼此电隔离。 功率放大器还包括多个偏置网络，每个偏置网络被配置为动态地偏置多个晶体管中的至少一个。 多个晶体管以串联堆叠电耦合，功率放大器的输出跨越串联堆叠提供。

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