公开(公告)号：US20170066050A1

公开(公告)日：2017-03-09

申请号：US15180656

申请日：2016-06-13

Applicant: QD VISION, INC.

Inventor： JUSTIN W. KAMPLAIN ,  KEEVE GURKIN ,  PETER ALLEN

IPC: B22F1/00 ,  B22F9/24

CPC classification number: C22C1/007 ,  C01G28/026 ,  C01P2006/60

Abstract: A method for preparing semiconductor nanocrystals comprising indium arsenide is disclosed. The method includes heating a first mixture including nanocrystal seeds comprising indium arsenide with an absorbance in a range from about 700 to 800 nm and a liquid medium in a reaction vessel to a first temperature; and combining the nanocrystals seeds comprising indium arsenide with an indium-source mixture and an arsenic-source mixture under conditions suitable to increase the size of the seeds to form the semiconductor nanocrystals comprising indium arsenide, wherein the indium-source mixture includes an indium precursor, a coordinating solvent, and a carboxylic acid; and the arsenic-source mixture includes a liquid medium and an arsenic precursor represented by the formula As(Y(R)3)3, where Y is Ge, Sn, or Pb; and each R, independently, is alkyl, alkenyl, alkynyl, cycloalkyl, cycloalkenyl, heterocyclyl, aryl, or heteroaryl, wherein each R, independently, is optionally substituted by 1 to 6 substituents independently selected from hydrogen, halo, hydroxy, nitro, cyano, amino, alkyl, cycloalkyl, cycloalkenyl, alkoxy, acyl, thio, thioalkyl, alkenyl, alkynyl, cycloalkenyl, heterocyclyl, aryl, or heteroaryl. Semiconductor nanocrystals are also disclosed.

Abstract translation: 公开了一种制备包含砷化铟的半导体纳米晶体的方法。 该方法包括将包含砷化砷的纳米晶体种子的第一混合物加热至约700至800nm范围内的吸光度，将反应容器中的液体介质加热至第一温度; 以及在适于增加种子大小以形成包括砷化铟的半导体纳米晶体的条件下，将包含砷化铟的纳米晶体种子与铟 - 源混合物和砷源混合物组合，其中所述铟 - 源混合物包括铟前体， 配位溶剂和羧酸; 砷源混合物包括由式As（Y（R）3）3表示的液体介质和砷前体，其中Y是Ge，Sn或Pb; 并且每个R独立地是烷基，烯基，炔基，环烷基，环烯基，杂环基，芳基或杂芳基，其中每个R独立地任选被1至6个独立地选自氢，卤素，羟基，硝基，氰基 ，氨基，烷基，环烷基，环烯基，烷氧基，酰基，硫代，硫代烷基，烯基，炔基，环烯基，杂环基，芳基或杂芳基。 还公开了半导体纳米晶体。