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    SEMICONDUCTOR NANOCRYSTALS AND METHOD OF PREPARATION
    1.
    发明申请
    SEMICONDUCTOR NANOCRYSTALS AND METHOD OF PREPARATION 审中-公开
    半导体纳米晶体及其制备方法

    公开(公告)号：US20170066050A1

    公开(公告)日：2017-03-09

    申请号：US15180656

    申请日：2016-06-13

    Applicant: QD VISION, INC.

    Inventor： JUSTIN W. KAMPLAIN ,  KEEVE GURKIN ,  PETER ALLEN

    IPC: B22F1/00 ,  B22F9/24

    CPC classification number: C22C1/007 ,  C01G28/026 ,  C01P2006/60

    Abstract: A method for preparing semiconductor nanocrystals comprising indium arsenide is disclosed. The method includes heating a first mixture including nanocrystal seeds comprising indium arsenide with an absorbance in a range from about 700 to 800 nm and a liquid medium in a reaction vessel to a first temperature; and combining the nanocrystals seeds comprising indium arsenide with an indium-source mixture and an arsenic-source mixture under conditions suitable to increase the size of the seeds to form the semiconductor nanocrystals comprising indium arsenide, wherein the indium-source mixture includes an indium precursor, a coordinating solvent, and a carboxylic acid; and the arsenic-source mixture includes a liquid medium and an arsenic precursor represented by the formula As(Y(R)3)3, where Y is Ge, Sn, or Pb; and each R, independently, is alkyl, alkenyl, alkynyl, cycloalkyl, cycloalkenyl, heterocyclyl, aryl, or heteroaryl, wherein each R, independently, is optionally substituted by 1 to 6 substituents independently selected from hydrogen, halo, hydroxy, nitro, cyano, amino, alkyl, cycloalkyl, cycloalkenyl, alkoxy, acyl, thio, thioalkyl, alkenyl, alkynyl, cycloalkenyl, heterocyclyl, aryl, or heteroaryl. Semiconductor nanocrystals are also disclosed.

    Abstract translation: 公开了一种制备包含砷化铟的半导体纳米晶体的方法。 该方法包括将包含砷化砷的纳米晶体种子的第一混合物加热至约700至800nm范围内的吸光度，将反应容器中的液体介质加热至第一温度; 以及在适于增加种子大小以形成包括砷化铟的半导体纳米晶体的条件下，将包含砷化铟的纳米晶体种子与铟 - 源混合物和砷源混合物组合，其中所述铟 - 源混合物包括铟前体， 配位溶剂和羧酸; 砷源混合物包括由式As（Y（R）3）3表示的液体介质和砷前体，其中Y是Ge，Sn或Pb; 并且每个R独立地是烷基，烯基，炔基，环烷基，环烯基，杂环基，芳基或杂芳基，其中每个R独立地任选被1至6个独立地选自氢，卤素，羟基，硝基，氰基 ，氨基，烷基，环烷基，环烯基，烷氧基，酰基，硫代，硫代烷基，烯基，炔基，环烯基，杂环基，芳基或杂芳基。 还公开了半导体纳米晶体。

    SEMICONDUCTOR NANOCRYSTALS, A METHOD FOR PREPARING A SEMICONDUCTOR NANOCRYSTAL, AND PRODUCT INCLUDING SAME
    2.
    发明申请
    SEMICONDUCTOR NANOCRYSTALS, A METHOD FOR PREPARING A SEMICONDUCTOR NANOCRYSTAL, AND PRODUCT INCLUDING SAME 审中-公开
    半导体纳米晶体，制备半导体纳米晶体的方法和包括其的产品

    公开(公告)号：US20170069786A1

    公开(公告)日：2017-03-09

    申请号：US15180630

    申请日：2016-06-13

    Applicant: QD VISION, INC.

    Inventor： JUSTIN W. KAMPLAIN

    IPC: H01L33/06 ,  C22C1/00 ,  H01L33/26 ,  C22C30/06

    CPC classification number: H01L33/06 ,  C22C1/00 ,  C22C30/06 ,  H01L33/26

    Abstract: Disclosed are a semiconductor nanocrystal comprising an alloy comprising an alloy including a Group III element, a Group II element, antimony, and a Group VI element; a method for preparing a semiconductor nanocrystal comprising an alloy comprising an alloy including a Group III element, a Group II element, antimony, and a Group VI element, and a light emitting device including an emissive material comprising a semiconductor nanocrystal comprising an alloy comprising an alloy including a Group III element, a Group II element, antimony, and a Group VI element.

    Abstract translation: 公开了一种半导体纳米晶体，其包括合金，其包含包含III族元素，II族元素，锑和VI族元素的合金; 一种制备半导体纳米晶体的方法，包括含有包含III族元素，II族元素，锑和VI族元素的合金的合金，以及包含发光材料的发光器件，该发光器件包括半导体纳米晶体，该半导体纳米晶体包括合金， 合金，包括III族元素，II族元素，锑和VI族元素。

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