METHOD FOR PREPARING SEMICONDUCTOR NANOCRYSTALS
    1.
    发明申请
    METHOD FOR PREPARING SEMICONDUCTOR NANOCRYSTALS 有权
    制备半导体纳米晶体的方法

    公开(公告)号:US20150044806A1

    公开(公告)日:2015-02-12

    申请号:US14461070

    申请日:2014-08-15

    Abstract: A method for preparing semiconductor nanocrystals including a core and an overcoating layer is disclosed. According to one aspect of the invention, the method comprises preparing more than one batch of cores comprising a first semiconductor material and having a maximum emission peak within a predetermined spectral region, wherein each batch of cores is characterized by a first excitonic absorption peak at an absorption wavelength and a maximum emission peak at an emission wavelength; selecting a batch of cores from the batches prepared wherein the selected batch is characterized by a difference between the absorption wavelength and the emission wavelength that is less than or equal to 13; and overcoating the cores of the selected batch with a layer comprising a second semiconductor material.

    Abstract translation: 公开了一种制备包括芯和外涂层的半导体纳米晶体的方法。 根据本发明的一个方面,该方法包括制备包括第一半导体材料并且在预定光谱区内具有最大发射峰值的多于一批的核心,其中每批核心的特征在于第一激子吸收峰在 吸收波长和发射波长处的最大发射峰; 从制备的批次中选择一批核心,其中所选批次的特征在于吸收波长和发射波长之间的差小于或等于13; 以及用包括第二半导体材料的层覆盖所选批次的芯。

Patent Agency Ranking