Abstract:
A device including an emissive material comprising quantum dots is disclosed. In one embodiment, the device includes a first electrode and a second electrode, a layer comprising quantum dots disposed between the first electrode and the second electrodes, and a first interfacial layer disposed at the interface between a surface of the layer comprising quantum dots and a first layer in the device. In certain embodiments, a second interfacial layer is optionally further disposed on the surface of the layer comprising quantum dots opposite to the first interfacial layer. In certain embodiments, a device comprises a light-emitting device. Other light emitting devices and methods are disclosed.
Abstract:
In one embodiment, a method for forming a coating comprising a semiconductor material on at least a portion of a population of semiconductor nanocrystals comprises providing a first mixture including semiconductor nanocrystals and an aromatic solvent, introducing one or more cation precursors and one or more anion precursors into the first mixture to form a reaction mixture for forming the semiconductor material, reacting the precursors in the reaction mixture, without the addition of an acid compound, under conditions sufficient to grow a coating comprising the semiconductor material on at least a portion of an outer surface of at least a portion of the semiconductor nanocrystals, and wherein an amide compound is formed in situ in the reaction mixture prior to isolating the coated semiconductor nanocrystals. In another embodiment, method for forming a coating comprising a semiconductor material on at least a portion of a population of semiconductor nanocrystals comprises providing a first mixture including semiconductor nanocrystals and a solvent, introducing an amide compound, one or more cation precursors and one or more anion precursors into the first mixture to form a reaction mixture for forming the semiconductor material, and reacting the precursors in the reaction mixture in the presence of the amide compound, under conditions sufficient to grow a coating comprising the semiconductor material on at least a portion of an outer surface of at least a portion of the semiconductor nanocrystals. Semiconductor nanocrystals including coatings grown in accordance with the above methods are also disclosed.
Abstract:
A light emitting device including a light emitting element having a light emitting surface and an optical component comprising an optical material comprising quantum dots sealed within an optically transparent structural member, the optical component being coupled to the light emitting element by a thermally conductive member is disclosed. A light emitting device including a light emitting element having a light emitting surface and an optical component comprising an optical material comprising quantum dots sealed within a structural member comprising single crystal sapphire, the optical component being coupled to the light emitting element by a thermally conductive member, is also disclosed.
Abstract:
A luminescent particle including a surface comprising glass that surrounds one or more particles of one or more light emissive materials is disclosed. Preferably the surface comprises a vitrified glass. Methods form making a luminescent particle including a surface comprising glass that surrounds one or more particles of one or more light emissive materials is also disclosed. Compositions and products including a luminescent particle are further disclosed.
Abstract:
A method for preparing semiconductor nanocrystals comprising indium arsenide is disclosed. The method includes heating a first mixture including nanocrystal seeds comprising indium arsenide with an absorbance in a range from about 700 to 800 nm and a liquid medium in a reaction vessel to a first temperature; and combining the nanocrystals seeds comprising indium arsenide with an indium-source mixture and an arsenic-source mixture under conditions suitable to increase the size of the seeds to form the semiconductor nanocrystals comprising indium arsenide, wherein the indium-source mixture includes an indium precursor, a coordinating solvent, and a carboxylic acid; and the arsenic-source mixture includes a liquid medium and an arsenic precursor represented by the formula As(Y(R)3)3, where Y is Ge, Sn, or Pb; and each R, independently, is alkyl, alkenyl, alkynyl, cycloalkyl, cycloalkenyl, heterocyclyl, aryl, or heteroaryl, wherein each R, independently, is optionally substituted by 1 to 6 substituents independently selected from hydrogen, halo, hydroxy, nitro, cyano, amino, alkyl, cycloalkyl, cycloalkenyl, alkoxy, acyl, thio, thioalkyl, alkenyl, alkynyl, cycloalkenyl, heterocyclyl, aryl, or heteroaryl. Semiconductor nanocrystals are also disclosed.
Abstract:
A lighting system is disclosed. The lighting system comprises at least one light source comprising a light emitting diode (LED) and one or more phosphors optically coupled to the LED to convert at least a portion of original light emitted by the LED to provide a modified LED light having a first predetermined spectral output, and an optical material that is optically coupled to at least a portion of a surface of a light guide plate and optically coupled to receive at least a portion of the modified LED light and to convert at least a portion of the modified LED light to at least one predetermined wavelength to provide modified light having a second predetermined spectral output, wherein the optical material comprises one or more types of quantum confined semiconductor nanoparticle. A device including a lighting system is also disclosed.
Abstract:
An optical component is disclosed that comprises a first substrate, an optical material comprising quantum confined semiconductor nanoparticles disposed over a predetermined region of a first surface of the first substrate, a layer comprising an adhesive material disposed over the optical material and any portion of the first surface of the first substrate not covered by the optical material, and a second substrate disposed over the layer comprising an adhesive material, wherein the first and second substrates are sealed together. In certain embodiments, the optical component further includes a second optical material comprising quantum confined semiconductor nanoparticles disposed between the layer comprising the adhesive material and the second substrate. Method are also disclosed. Also disclosed are products including the optical component.
Abstract:
A nanocrystal comprising a semiconductor material comprising one or more elements of Group IIIA of the Periodic Table of Elements and one or more elements of Group VA of the Periodic Table of Elements, wherein the nanocrystal is capable of emitting light having a photoluminescence quantum efficiency of at least about 30% upon excitation. Also disclosed is a nanocrystal including a core comprising a first semiconductor material comprising one or more elements of Group IIIA of the Periodic Table of Elements and one or more elements of Group VA of the Periodic Table of Elements, and a shell disposed over at least a portion of the core, the shell comprising a second semiconductor material, wherein the nanocrystal is capable of emitting light having a photoluminescence quantum efficiency of at least about 30% upon excitation. Also disclosed is a nanocrystal comprising a nanocrystal core and a shell comprising a semiconductor material disposed on at least a portion of the nanocrystal core, wherein the semiconductor material comprises at least three chemical elements and is obtainable by a process comprising adding a precursor for at least one of the chemical elements of the semiconductor material from a separate source to a nanocrystal core while simultaneously adding amounts of precursors for the other chemical elements of the semiconductor material. A population of nanocrystals, method for preparing nanocrystals, compositions, and devices including nanocrystals are also disclosed.
Abstract:
A semiconductor nanocrystal capable of emitting light with an improved photoluminescence quantum efficiency. The present invention further relates to compositions and devices including semiconductor nanocrystals capable of emitting light with an improved photoluminescence quantum efficiency. A semiconductor nanocrystal wherein the semiconductor nanocrystal is capable of emitting light with a photoluminescence quantum efficiency greater than about 50% upon excitation and including a maximum peak emission with a FWHM less than 20 nm is disclosed. Also disclosed are a device, a population of semiconductor nanocrystals, and a composition including a semiconductor nanocrystal wherein the semiconductor nanocrystal is capable of emitting light with a photoluminescence quantum efficiency greater than about 50% upon excitation and including a maximum peak emission with a FWHM less than 20 nm. A semiconductor nanocrystal that is capable of emitting light upon excitation with a photoluminescence quantum efficiency greater than about 90%. Also disclosed are a device, a population, and a composition including a semiconductor nanocrystal.
Abstract:
A composition useful for altering the wavelength of visible or invisible light is disclosed. The composition comprising a solid host material and quantum confined semiconductor nanoparticles, wherein the nanoparticles are included in the composition in amount in the range from about 0.001 to about 15 weight percent based on the weight of the host material. The composition can further include scatterers. An optical component including a waveguide component and quantum confined semiconductor nanoparticles is also disclosed. A device including an optical component is disclosed. A system including an optical component including a waveguide component and quantum confined semiconductor nanoparticles and a light source optically coupled to the waveguide component is also disclosed. A decal, kit, ink composition, and method are also disclosed. A TFEL including quantum confined semiconductor nanoparticles on a surface thereof is also disclosed.