公开(公告)号：US20150044806A1

公开(公告)日：2015-02-12

申请号：US14461070

申请日：2014-08-15

Applicant: QD Vision, Inc.

Inventor： CRAIG A. BREEN ,  MAYANK PURI

IPC: H01L51/56

CPC classification number: H01L51/56 ,  B82Y40/00 ,  H01L21/02469 ,  H01L21/02513 ,  H01L21/02551 ,  H01L21/02601 ,  H01L21/02628

Abstract: A method for preparing semiconductor nanocrystals including a core and an overcoating layer is disclosed. According to one aspect of the invention, the method comprises preparing more than one batch of cores comprising a first semiconductor material and having a maximum emission peak within a predetermined spectral region, wherein each batch of cores is characterized by a first excitonic absorption peak at an absorption wavelength and a maximum emission peak at an emission wavelength; selecting a batch of cores from the batches prepared wherein the selected batch is characterized by a difference between the absorption wavelength and the emission wavelength that is less than or equal to 13; and overcoating the cores of the selected batch with a layer comprising a second semiconductor material.

Abstract translation: 公开了一种制备包括芯和外涂层的半导体纳米晶体的方法。 根据本发明的一个方面，该方法包括制备包括第一半导体材料并且在预定光谱区内具有最大发射峰值的多于一批的核心，其中每批核心的特征在于第一激子吸收峰在 吸收波长和发射波长处的最大发射峰; 从制备的批次中选择一批核心，其中所选批次的特征在于吸收波长和发射波长之间的差小于或等于13; 以及用包括第二半导体材料的层覆盖所选批次的芯。

公开(公告)号：US20140284549A1

公开(公告)日：2014-09-25

申请号：US14215215

申请日：2014-03-17

Applicant: QD VISION, INC.

Inventor： WENHAO LIU ,  PETER M. ALLEN ,  ANNIE CHO WON ,  ZHIMING WANG ,  CRAIG A. BREEN

IPC: H01L33/24 ,  H01L33/26 ,  H01L33/06 ,  H01L33/00

CPC classification number: C09K11/883 ,  C09D11/52 ,  C09K11/025 ,  C09K11/565 ,  H01L33/06 ,  H01L33/24 ,  H01L33/26

Abstract: A semiconductor nanocrystal that emits green light having a peak emission with a full width at half maximum of about 30 nm or less at 100° C. and a method of making coated semiconductor nanocrystals are provided. Materials and other products including semiconductor nanocrystals described herein and materials and other products including semiconductor nanocrystals prepared by a method described herein are also disclosed.

Abstract translation: 提供了在100℃下发射半峰全宽为约30nm或更小的峰值发射的绿光的半导体纳米晶体，以及制备涂覆的半导体纳米晶体的方法。 还公开了包括本文所述的半导体纳米晶体的材料和其它产品以及通过本文所述的方法制备的包括半导体纳米晶体的材料和其它产品。