公开(公告)号：US20170237138A1

公开(公告)日：2017-08-17

申请号：US15386173

申请日：2016-12-21

Applicant: QINGDAO HAIER ELECTRONICS CO., LTD.

Inventor： Biao Peng ,  Shufang Li ,  Shuai Wang ,  Ling Wang ,  Yili Zhai ,  Xijia Hu

IPC: H01P1/201 ,  H01P3/08 ,  H01P3/02

CPC classification number: H01P1/2016 ,  H01P1/203 ,  H01P1/20381 ,  H01P3/023 ,  H01P3/08 ,  H01P3/081 ,  H01P7/08 ,  H01P7/082 ,  H01Q1/38

Abstract: The present invention discloses a four-mode defected ground structure resonator, comprising a metal dielectric substrate and a defected ground unit which is etched in one surface of the metal dielectric substrate; the shape of the defected ground unit is axially symmetric about a first central axis of the defected ground unit, and also the shape of the defected ground unit is axially symmetric about a second central axis of the defected ground unit; the first defected ground unit is provided with H-shape or quasi H-shape, the second defected ground unit is provided with L-shape, quasi L-shape, U-shape or quasi U-shape. The four-mode defected ground structure resonator of the present invention is provided with four types of resonant modes, and the four types of resonant modes are provided with good tunability.

公开(公告)号：US10211499B2

公开(公告)日：2019-02-19

申请号：US15386173

申请日：2016-12-21

Applicant: QINGDAO HAIER ELECTRONICS CO., LTD.

Inventor： Biao Peng ,  Shufang Li ,  Shuai Wang ,  Ling Wang ,  Yili Zhai ,  Xijia Hu

IPC: H01P1/203 ,  H01P3/08 ,  H01P7/08 ,  H01P1/201 ,  H01P3/02 ,  H01Q1/38

Abstract: The present invention discloses a four-mode defected ground structure resonator, comprising a metal dielectric substrate and a defected ground unit which is etched in one surface of the metal dielectric substrate; the shape of the defected ground unit is axially symmetric about a first central axis of the defected ground unit, and also the shape of the defected ground unit is axially symmetric about a second central axis of the defected ground unit; the first defected ground unit is provided with H-shape or quasi H-shape, the second defected ground unit is provided with L-shape, quasi L-shape, U-shape or quasi U-shape. The four-mode defected ground structure resonator of the present invention is provided with four types of resonant modes, and the four types of resonant modes are provided with good tunability.

公开(公告)号：US10170814B2

公开(公告)日：2019-01-01

申请号：US15386520

申请日：2016-12-21

Applicant: QINGDAO HAIER ELECTRONICS CO., LTD.

Inventor： Biao Peng ,  Shufang Li ,  Shuai Wang ,  Ling Wang ,  Yili Zhai ,  Xijia Hu

IPC: H01P1/203 ,  H01P3/08 ,  H01Q1/38

Abstract: Disclosed is a four-mode defected ground structure filter, including a four-mode defected ground structure resonator and two microstrip feed lines. The four-mode defected ground structure resonator comprises a metal dielectric substrate and a defected ground unit which is etched in one surface of the metal dielectric substrate; the microstrip feed lines are arranged at another surface of the metal dielectric substrate; shape of the defected ground unit is axially symmetric about a first central axis of the defected ground unit, and is axially symmetric about a second central axis of the defected ground unit; the first defected ground unit is provided with H-shape or quasi H-shape, the second defected ground unit is provided with L-shape, quasi L-shape, U-shape or quasi U-shape.

公开(公告)号：US20170237136A1

公开(公告)日：2017-08-17

申请号：US15386520

申请日：2016-12-21

Applicant: QINGDAO HAIER ELECTRONICS CO., LTD.

Inventor： Biao Peng ,  Shufang Li ,  Shuai Wang ,  Ling Wang ,  Yili Zhai ,  Xijia Hu

IPC: H01P1/203

CPC classification number: H01P1/203 ,  H01P1/20381 ,  H01P3/08 ,  H01P3/081 ,  H01Q1/38

Abstract: Disclosed is a four-mode defected ground structure filter, including a four-mode defected ground structure resonator and two microstrip feed lines. The four-mode defected ground structure resonator comprises a metal dielectric substrate and a defected ground unit which is etched in one surface of the metal dielectric substrate; the microstrip feed lines are arranged at another surface of the metal dielectric substrate; shape of the defected ground unit is axially symmetric about a first central axis of the defected ground unit, and is axially symmetric about a second central axis of the defected ground unit; the first defected ground unit is provided with H-shape or quasi H-shape, the second defected ground unit is provided with L-shape, quasi L-shape, U-shape or quasi U-shape.