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公开(公告)号:US20200044621A1
公开(公告)日:2020-02-06
申请号:US16050212
申请日:2018-07-31
Applicant: QUALCOMM Incorporated
Inventor: Stephen Alan FANELLI , Sinan GOKTEPELI , Alexandre Augusto SHIRAKAWA
IPC: H03H3/10 , H03H9/02 , H01L41/312 , H01L41/338
Abstract: In certain aspects, a thin film surface acoustic wave (SAW) die comprises a high-resistivity substrate, a bonding layer on the high-resistivity substrate, and a thin film piezoelectric island on the bonding layer, where an edge of the thin film piezoelectric island is offset from an edge of the bonding layer.