公开(公告)号：US20170373175A1

公开(公告)日：2017-12-28

申请号：US15192773

申请日：2016-06-24

Applicant: QUALCOMM Incorporated

Inventor： Shiqun GU ,  Gengming TAI ,  Je-Hsiung LAN ,  Matthew Michael NOWAK ,  Miguel MIRANDA CORBALAN ,  Steve FANELLI

IPC: H01L29/737 ,  H01L23/31 ,  H01L29/08 ,  H01L29/66

Abstract: Disclosed is a heterojunction bipolar transistor, and method of manufacturing the same, including an emitter having a conductive emitter contact coupled to a first side of the emitter, a first side of a base coupled to a second side of the emitter opposite the first side of the emitter, a collector coupled to the base on a second side of the base opposite the emitter, wherein an area of a junction between the base and the collector is less than or equal to an area of a junction between the base and the emitter, a first conductive base contact coupled to the base, and a conductive collector contact coupled to the collector on the side of the collector opposite the emitter and substantially parallel to the first conductive base contact.