公开(公告)号：US20200350906A1

公开(公告)日：2020-11-05

申请号：US16936021

申请日：2020-07-22

Applicant: QUALCOMM Incorporated

Inventor： Max Samuel AUBAIN ,  Clint KEMERLING

IPC: H03K17/16 ,  H03K17/693 ,  H03K17/10 ,  H03K17/30 ,  H03K3/01 ,  H03K17/687

Abstract: In some method and apparatus embodiments, an RF circuit comprises a switch transistor having a source, a drain, a gate, and a body. A gate control voltage is applied to the gate of the switch transistor. A body control voltage is applied to the body of the switch transistor. The body control voltage is a positive bias voltage when the switch transistor is in an on state. in some embodiments, an RE circuit comprises a control voltage applied to the gate of the switch transistor through a first resistance and applied to the body of the switch transistor through a second resistance. The first resistance is different from the second resistance.