READ/WRITE ASSIST FOR MEMORIES
    1.
    发明申请
    READ/WRITE ASSIST FOR MEMORIES 有权
    用于记忆的读/写支援

    公开(公告)号:US20150085568A1

    公开(公告)日:2015-03-26

    申请号:US14038434

    申请日:2013-09-26

    CPC classification number: G11C11/419 G11C8/08 G11C8/14 H01L27/1104 H01L27/1116

    Abstract: An integrated circuit includes one or more bit cells, a word line coupled to the one or more bit cells, and a dummy word line arranged with the word line to have a capacitance therebetween. The capacitance provides a voltage boost or reduction of the word line to assist read and write operations.

    Abstract translation: 集成电路包括一个或多个位单元,耦合到所述一个或多个位单元的字线以及与所述字线布置以在其间具有电容的虚拟字线。 该电容提供了字线的升压或降压以辅助读和写操作。

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