Fully valid-gated read and write for low power array
    1.
    发明授权
    Fully valid-gated read and write for low power array 有权
    低功耗阵列的完全有效门控读写

    公开(公告)号:US09384795B1

    公开(公告)日:2016-07-05

    申请号:US14698843

    申请日:2015-04-29

    Abstract: In an array that qualifies each row according to a valid/invalid state, each row may each include valid-gated read circuitry to conditionally block a read wordline from toggling unless the row stores a data word that has a valid state or a read force signal is asserted. Furthermore, in a write operation, each row may have valid-gated write circuitry that conditionally blocks a write wordline from toggling unless input data to be written to the row has a valid state or a write force signal is asserted. Moreover, output latch clocking may be blocked from toggling unless a row to be read stores a data word that has a valid state or the read force signal is asserted, and input latch clocking may also be blocked unless the input data to be written has a valid state or the write force signal is asserted.

    Abstract translation: 在根据有效/无效状态对每行进行限定的数组中,每行可以包括有效门控读取电路,以有条件地阻止读取字线切换,除非该行存储具有有效状态或读取强制信号的数据字 被断言。 此外,在写入操作中,每行可以具有有效门控写入电路,其有条件地阻止写入字线切换,除非要写入行的输入数据具有有效状态或写入强制信号被断言。 此外,除非要读取的行存储具有有效状态的数据字或读取强制信号被断言,否则输出锁存时钟可能被阻止,并且输入锁存时钟也可能被阻塞,除非要写入的输入数据具有 有效状态或写力信号被断言。

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