公开(公告)号：US11424250B2

公开(公告)日：2022-08-23

申请号：US17004457

申请日：2020-08-27

Applicant: QUALCOMM Incorporated

Inventor： Kalyan Kumar Oruganti ,  Sreeram Gurram ,  Venkata Balakrishna Reddy Thumu ,  Pradeep Jayadev Kodlipet ,  Diwakar Singh ,  Channappa Desai ,  Sunil Sharma ,  Anne Srikanth ,  Yandong Gao

IPC: H01L27/11 ,  H01L27/088 ,  H01L29/423

Abstract: An IC includes a first memory block, a second memory block, and a first memory border cell between the first memory block and the second memory block. The first memory border cell includes a first memory core endcap to the first memory block on a first side of the cell. The first memory border cell further includes a second memory core endcap to the second memory block on a second side of the cell. The second side is opposite the first side. The first memory border cell further includes a memory gap portion between the first memory core endcap and the second memory core endcap. The memory gap portion provides a gap between the first memory core endcap and the second memory core endcap.