公开(公告)号：US11424250B2

公开(公告)日：2022-08-23

申请号：US17004457

申请日：2020-08-27

Applicant: QUALCOMM Incorporated

Inventor： Kalyan Kumar Oruganti ,  Sreeram Gurram ,  Venkata Balakrishna Reddy Thumu ,  Pradeep Jayadev Kodlipet ,  Diwakar Singh ,  Channappa Desai ,  Sunil Sharma ,  Anne Srikanth ,  Yandong Gao

IPC: H01L27/11 ,  H01L27/088 ,  H01L29/423

Abstract: An IC includes a first memory block, a second memory block, and a first memory border cell between the first memory block and the second memory block. The first memory border cell includes a first memory core endcap to the first memory block on a first side of the cell. The first memory border cell further includes a second memory core endcap to the second memory block on a second side of the cell. The second side is opposite the first side. The first memory border cell further includes a memory gap portion between the first memory core endcap and the second memory core endcap. The memory gap portion provides a gap between the first memory core endcap and the second memory core endcap.

公开(公告)号：US11250924B1

公开(公告)日：2022-02-15

申请号：US17075002

申请日：2020-10-20

Applicant: QUALCOMM Incorporated

Inventor： Hochul Lee ,  Anil Chowdary Kota ,  Anne Srikanth

IPC: G11C17/00 ,  G11C17/18 ,  G11C17/16

Abstract: An OTP memory cell circuit includes a read access switch coupled to a fuse in a read current path to allow a read current to flow through the fuse during a read operation. The read access switch, which can be shut off in a write operation, is sized according to the read current to reduce leakage currents that can cause unreliable results. A diode circuit coupled to a node between the read access switch and the fuse provides a write current path through the fuse different from the read current path in the OTP memory cell circuit. The diode circuit is configured to drive, through the write current path including the fuse, a write current sufficient to blow the fuse in a write operation. The diode circuit occupies a smaller area than a write access transistor of comparable drive strength in the OTP memory cell circuit.

公开(公告)号：US11222706B1

公开(公告)日：2022-01-11

申请号：US17075002

申请日：2020-10-20

Applicant: QUALCOMM Incorporated

Inventor： Hochul Lee ,  Anil Chowdary Kota ,  Anne Srikanth

IPC: G11C17/00 ,  G11C17/18 ,  G11C17/16

Abstract: An OTP memory cell circuit includes a read access switch coupled to a fuse in a read current path to allow a read current to flow through the fuse during a read operation. The read access switch, which can be shut off in a write operation, is sized according to the read current to reduce leakage currents that can cause unreliable results. A diode circuit coupled to a node between the read access switch and the fuse provides a write current path through the fuse different from the read current path in the OTP memory cell circuit. The diode circuit is configured to drive, through the write current path including the fuse, a write current sufficient to blow the fuse in a write operation. The diode circuit occupies a smaller area than a write access transistor of comparable drive strength in the OTP memory cell circuit.

公开(公告)号：US11469239B1

公开(公告)日：2022-10-11

申请号：US17217067

申请日：2021-03-30

Applicant: QUALCOMM Incorporated

Inventor： Channappa Desai ,  Sunil Sharma ,  Anne Srikanth ,  Pradeep Jayadev Kodlipet ,  Yandong Gao

IPC: H01L27/11 ,  H01L27/092 ,  H01L23/482

Abstract: An SRAM array circuit in which a horizontal N-well of a well tap cell in a first row separated from a horizontal N-well of a well tap cell in a second row by a P-type substrate region is disclosed. The well tap cells include a bilateral P-type well tap disposed in the P-type substrate region between the horizontal N-wells in the first and second rows providing ground voltage to the P-type substrate on both sides of a column of well tap cells in the SRAM array circuit, rather than one P-type well tap for each side. Well tap cells without a vertical N-well reduces width, which corresponds to a reduction in width of the SRAM array circuit. The bilateral P-type well tap in a P-type implant region may include a plurality of folded fingers providing the ground voltage to the P-type substrate.

公开(公告)号：US20220320114A1

公开(公告)日：2022-10-06

申请号：US17217067

申请日：2021-03-30

Applicant: QUALCOMM Incorporated

Inventor： Channappa Desai ,  Sunil Sharma ,  Anne Srikanth ,  Pradeep Jayadev Kodlipet ,  Yandong Gao

IPC: H01L27/11 ,  H01L27/092 ,  H01L23/482

Abstract: An SRAM array circuit in which a horizontal N-well of a well tap cell in a first row separated from a horizontal N-well of a well tap cell in a second row by a P-type substrate region is disclosed. The well tap cells include a bilateral P-type well tap disposed in the P-type substrate region between the horizontal N-wells in the first and second rows providing ground voltage to the P-type substrate on both sides of a column of well tap cells in the SRAM array circuit, rather than one P-type well tap for each side. Well tap cells without a vertical N-well reduces width, which corresponds to a reduction in width of the SRAM array circuit. The bilateral P-type well tap in a P-type implant region may include a plurality of folded fingers providing the ground voltage to the P-type substrate.

公开(公告)号：US11177010B1

公开(公告)日：2021-11-16

申请号：US16927818

申请日：2020-07-13

Applicant: QUALCOMM Incorporated

Inventor： Hochul Lee ,  Anil Chowdary Kota ,  Anne Srikanth

IPC: G11C17/16 ,  G11C17/18 ,  G11C7/06 ,  G11C7/22 ,  G11C7/12

Abstract: The present disclosure provides bit cells with data redundancy according to various aspects. In certain aspects, a bit cell includes a first memory element coupled to a write bit line, and a first write-access switch coupled between the first memory element and a ground. The bit cell also includes a second memory element coupled to the write bit line, and a second write-access switch coupled between the second memory element and the ground. The bit cell further includes a read-access switch coupled between the first memory element and a read bit line, wherein a control input of the read-access switch is coupled to a read-select line.