公开(公告)号：US10217822B2

公开(公告)日：2019-02-26

申请号：US15241359

申请日：2016-08-19

Applicant: QUALCOMM Incorporated

Inventor： Paul A. Nygaard ,  Stuart B Molin ,  Michael A Stuber ,  Max Aubain

IPC: H01L29/78 ,  H01L29/10 ,  H01L29/06 ,  H01L21/78 ,  H01L21/84 ,  H01L23/36 ,  H01L23/367 ,  H01L29/786 ,  H01L27/12 ,  H01L23/00 ,  H01L21/762

Abstract: Embodiments of the present invention provide for the enhancement of transistors in a semiconductor structure using a strain layer. The structure comprises a patterned layer consisting of an excavated region and a pattern region, a strain layer located in the excavated region and on the pattern region, an active layer located above the strain layer, a field effect transistor formed in the active layer, and a handle layer located above the active layer. The field effect transistor comprises a source, a drain, and a channel. The channel lies completely within a lateral extent of the pattern region. The source and the drain each lie only partially within the lateral extent of the pattern region. The strain layer alters a carrier mobility of the channel. In some embodiments, the strain layer is introduced to the back side of a semiconductor-on-insulator structure.