公开(公告)号：US10217822B2

公开(公告)日：2019-02-26

申请号：US15241359

申请日：2016-08-19

Applicant: QUALCOMM Incorporated

Inventor： Paul A. Nygaard ,  Stuart B Molin ,  Michael A Stuber ,  Max Aubain

IPC: H01L29/78 ,  H01L29/10 ,  H01L29/06 ,  H01L21/78 ,  H01L21/84 ,  H01L23/36 ,  H01L23/367 ,  H01L29/786 ,  H01L27/12 ,  H01L23/00 ,  H01L21/762

Abstract: Embodiments of the present invention provide for the enhancement of transistors in a semiconductor structure using a strain layer. The structure comprises a patterned layer consisting of an excavated region and a pattern region, a strain layer located in the excavated region and on the pattern region, an active layer located above the strain layer, a field effect transistor formed in the active layer, and a handle layer located above the active layer. The field effect transistor comprises a source, a drain, and a channel. The channel lies completely within a lateral extent of the pattern region. The source and the drain each lie only partially within the lateral extent of the pattern region. The strain layer alters a carrier mobility of the channel. In some embodiments, the strain layer is introduced to the back side of a semiconductor-on-insulator structure.

公开(公告)号：US20180109252A1

公开(公告)日：2018-04-19

申请号：US15845549

申请日：2017-12-18

Applicant: QUALCOMM Incorporated

Inventor： Max Aubain ,  Clint KEMERLING

IPC: H03K17/16 ,  H03K17/687 ,  H03K3/01 ,  H03K17/693

CPC classification number: H03K17/162 ,  H03K3/01 ,  H03K17/102 ,  H03K17/30 ,  H03K17/687 ,  H03K17/6871 ,  H03K17/693 ,  H03K2217/0018

Abstract: In some method and apparatus embodiments, an RF circuit comprises a switch transistor having a source, a drain, a gate, and a body. A gate control voltage is applied to the gate of the switch transistor. A body control voltage is applied to the body of the switch transistor. The body control voltage is a positive bias voltage when the switch transistor is in an on state. In some embodiments, an RF circuit comprises a control voltage applied to the gate of the switch transistor through a first resistance and applied to the body of the switch transistor through a second resistance. The first resistance is different from the second resistance.

公开(公告)号：US10326439B2

公开(公告)日：2019-06-18

申请号：US15845549

申请日：2017-12-18

Applicant: QUALCOMM Incorporated

Inventor： Max Aubain ,  Clint Kemerling

IPC: H03K17/687 ,  H03K17/16 ,  H03K3/01 ,  H03K17/693 ,  H03K17/10 ,  H03K17/30

Abstract: In some method and apparatus embodiments, an RF circuit comprises a switch transistor having a source, a drain, a gate, and a body. A gate control voltage is applied to the gate of the switch transistor. A body control voltage is applied to the body of the switch transistor. The body control voltage is a positive bias voltage when the switch transistor is in an on state. In some embodiments, an RF circuit comprises a control voltage applied to the gate of the switch transistor through a first resistance and applied to the body of the switch transistor through a second resistance. The first resistance is different from the second resistance.

公开(公告)号：US20160359002A1

公开(公告)日：2016-12-08

申请号：US15241359

申请日：2016-08-19

Applicant: QUALCOMM Incorporated

Inventor： Paul A. Nygaard ,  Stuart B. Molin ,  Michael A. Stuber ,  Max Aubain

IPC: H01L29/10 ,  H01L23/367 ,  H01L29/78 ,  H01L29/06

CPC classification number: H01L29/1054 ,  H01L21/76256 ,  H01L21/78 ,  H01L21/84 ,  H01L23/36 ,  H01L23/3675 ,  H01L23/3677 ,  H01L24/03 ,  H01L24/08 ,  H01L24/11 ,  H01L24/13 ,  H01L24/29 ,  H01L24/32 ,  H01L24/48 ,  H01L24/80 ,  H01L24/83 ,  H01L24/94 ,  H01L27/1203 ,  H01L29/0649 ,  H01L29/1033 ,  H01L29/78 ,  H01L29/7843 ,  H01L29/7849 ,  H01L29/78603 ,  H01L29/78606 ,  H01L29/78654 ,  H01L2221/6834 ,  H01L2221/6835 ,  H01L2221/68377 ,  H01L2224/03845 ,  H01L2224/05572 ,  H01L2224/08225 ,  H01L2224/13022 ,  H01L2224/131 ,  H01L2224/13144 ,  H01L2224/13147 ,  H01L2224/16227 ,  H01L2224/29186 ,  H01L2224/29188 ,  H01L2224/2919 ,  H01L2224/32225 ,  H01L2224/48 ,  H01L2224/80006 ,  H01L2224/8022 ,  H01L2224/80801 ,  H01L2224/80894 ,  H01L2224/83005 ,  H01L2224/8322 ,  H01L2224/83801 ,  H01L2224/8385 ,  H01L2224/9202 ,  H01L2224/9212 ,  H01L2224/92142 ,  H01L2224/94 ,  H01L2924/00014 ,  H01L2924/1305 ,  H01L2924/3011 ,  H01L2924/014 ,  H01L2924/00 ,  H01L2924/053 ,  H01L2924/00012 ,  H01L2224/83 ,  H01L2224/80 ,  H01L2224/11 ,  H01L2224/03 ,  H01L2224/45099

Abstract: Embodiments of the present invention provide for the enhancement of transistors in a semiconductor structure using a strain layer. The structure comprises a patterned layer consisting of an excavated region and a pattern region, a strain layer located in the excavated region and on the pattern region, an active layer located above the strain layer, a field effect transistor formed in the active layer, and a handle layer located above the active layer. The field effect transistor comprises a source, a drain, and a channel. The channel lies completely within a lateral extent of the pattern region. The source and the drain each lie only partially within the lateral extent of the pattern region. The strain layer alters a carrier mobility of the channel. In some embodiments, the strain layer is introduced to the back side of a semiconductor-on-insulator structure.

Abstract translation: 本发明的实施例提供了使用应变层的半导体结构中的晶体管的增强。 该结构包括由挖掘区域和图案区域构成的图案层，位于挖掘区域和图案区域上的应变层，位于应变层上方的有源层，形成在有源层中的场效应晶体管，以及 位于有源层上方的手柄层。 场效应晶体管包括源极，漏极和沟道。 通道完全位于图案区域的横向范围内。 源极和漏极各自仅部分地位于图案区域的横向范围内。 应变层改变通道的载流子迁移率。 在一些实施例中，将应变层引入到绝缘体上半导体结构的背面。