RING OSCILLATOR ARCHITECTURE WITH CONTROLLED SENSITIVITY TO SUPPLY VOLTAGE
    1.
    发明申请
    RING OSCILLATOR ARCHITECTURE WITH CONTROLLED SENSITIVITY TO SUPPLY VOLTAGE 有权
    具有控制灵敏度的环形振荡器架构供电电压

    公开(公告)号:US20160336924A1

    公开(公告)日:2016-11-17

    申请号:US14711158

    申请日:2015-05-13

    CPC classification number: H03K3/0315 H03K3/011 H03L7/0995 H03L7/0997

    Abstract: A method and apparatus for controlling a supply sensitivity of a ring oscillator stage are provided. The apparatus is configured to generate, via a voltage biasing module, a first bias signal for a PMOS biasing module based on a supply voltage and a second bias signal for a NMOS biasing module based on the supply voltage, bias, via the PMOS biasing module, triode PMOS degeneration of the inverting module based on the first bias signal, bias, via the NMOS biasing module, triode NMOS degeneration of the inverting module based on the second bias signal, receive an input via an inverting module, and output, via the inverting module, an inverted version of the received input based on the biased triode NMOS degeneration and the biased triode PMOS degeneration.

    Abstract translation: 提供了一种用于控制环形振荡器级的供电灵敏度的方法和装置。 该装置被配置为经由电压偏压模块经由PMOS偏压模块基于供电电压和偏压,基于供电电压和用于NMOS偏置模块的第二偏置信号,经由电压偏压模块产生第一偏置信号 基于第一偏置信号的反相模块的三极管PMOS退化,经由NMOS偏置模块的偏置,基于第二偏置信号的反相模块的三极管NMOS退化,经由反相模块接收输入,并且经由反相模块输出 反相模块,基于偏置三极管NMOS退化和偏置三极管PMOS退化的接收输入的反相形式。

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