公开(公告)号：US09300295B1

公开(公告)日：2016-03-29

申请号：US14626920

申请日：2015-02-19

Applicant: QUALCOMM Incorporated

Inventor： Yaojun Zhang ,  Wenqing Wu ,  Kendrick Hoy Leong Yuen ,  Karim Arabi

IPC: H03K19/18 ,  H03K19/20 ,  H03K19/003

CPC classification number: H03K19/00346 ,  G11C11/1675 ,  G11C11/18 ,  H01L27/22 ,  H01L43/08 ,  H03K3/45 ,  H03K19/18

Abstract: Systems and methods pertain to avoiding undesirable current paths or sneak paths in spintronic logic gates formed from Giant Spin Hall Effect (GSHE) magnetic tunnel junction (MTJ) elements. Sneak path prevention logic is coupled to the GSHE MTJ elements, to prevent the sneak paths. The sneak path prevention logic may include one or more transistors coupled to the one or more GSHE MTJ elements, to restrict write current from flowing from an intended pipeline stage to an unintended pipeline stage during a write operation. The sneak path prevention logic may also include one or more diodes coupled to the one or more GSHE MTJ elements to prevent a preset current from flowing into input circuitry or a charge current generation circuit. A preset line may be coupled to the one or more GSHE MTJ elements to divert preset current from flowing into unintended paths.

Abstract translation: 系统和方法涉及避免由巨型旋转霍尔效应（GSHE）磁性隧道结（MTJ）元件形成的自旋电子逻辑门中的不必要的电流路径或潜行路径。 潜行路径预防逻辑耦合到GSHE MTJ元素，以防止潜行路径。 潜行路径预防逻辑可以包括耦合到一个或多个GSHE MTJ元件的一个或多个晶体管，以在写入操作期间限制写入电流从预期流水线级流到非预期流水线级。 潜行路径预防逻辑还可以包括耦合到一个或多个GSHE MTJ元件的一个或多个二极管，以防止预设电流流入输入电路或充电电流产生电路。 预设线可以耦合到一个或多个GSHE MTJ元件，以将预设电流从流入非预期路径转移。