公开(公告)号：US20240421128A1

公开(公告)日：2024-12-19

申请号：US18335532

申请日：2023-06-15

Applicant: QUALCOMM Incorporated

Inventor： Yangyang SUN ,  Yi-Hang LIN ,  Dongming HE ,  Lily ZHAO ,  Ryan LANE

IPC: H01L25/065 ,  H01L21/56 ,  H01L23/00 ,  H01L23/31 ,  H01L23/48 ,  H01L23/498 ,  H01L27/02

Abstract: Disclosed is a semiconductor device. In an aspect, a semiconductor device includes: a first-tier passive device including a substrate portion, a passive device portion, and a metallization portion disposed in a stacked configuration; and one or more second-tier passive devices disposed over the first-tier passive device. Each one of the one or more second-tier passive devices includes: a substrate portion, a passive device portion, and a metallization portion disposed in a stacked configuration; and a set of through substrate vias (TSVs) passing through a corresponding substrate portion and electrically coupled to a corresponding metallization portion. The semiconductor device comprises a passive component including the passive device portion of the first-tier passive device electrically coupled to one or more passive device portions of the one or more second-tier passive devices through the metallization portions of the first-tier passive device and the one or more second-tier passive devices.