公开(公告)号：US11694982B2

公开(公告)日：2023-07-04

申请号：US17185244

申请日：2021-02-25

Applicant: QUALCOMM Incorporated

Inventor： Wei Hu ,  Dongming He ,  Wen Yin ,  Zhe Guan ,  Lily Zhao

IPC: H01L23/00

CPC classification number: H01L24/13 ,  H01L24/05 ,  H01L24/11 ,  H01L2224/11013 ,  H01L2224/11622 ,  H01L2224/11849 ,  H01L2224/13147 ,  H01L2224/13584 ,  H01L2224/13655

Abstract: Disclosed are examples of integrated circuit (IC) structures and techniques to fabricate IC structures. Each IC package may include a die (e.g., a flip-chip (FC) die) and one or more die interconnects to electrically couple the die to a substrate. The die interconnect may include a pillar, a wetting barrier on the pillar, and a solder cap on the wetting barrier. The wetting barrier may be wider than the pillar. The die interconnect may also include a low wetting layer formed on the wetting barrier.