公开(公告)号：US20240106201A1

公开(公告)日：2024-03-28

申请号：US18534810

申请日：2023-12-11

Applicant: QUANZHOU SAN'AN SEMICONDUCTOR TECHNOLOGY CO., LTD.

Inventor： Zhibai ZHONG ,  Tao YE ,  Min ZHANG ,  Shao-Hua HUANG ,  Shuiqing LI

IPC: H01S5/22 ,  H01S5/042 ,  H01S5/32

CPC classification number: H01S5/222 ,  H01S5/04256 ,  H01S5/3211 ,  H01S5/168

Abstract: A laser diode includes a substrate, an epitaxial structure, an electrode contacting layer and an optical cladding layer. The epitaxial structure is disposed on the substrate, and is formed with a ridge structure opposite to the substrate. The electrode contacting layer is disposed on a top surface of the ridge structure. The optical cladding layer has a refractive index smaller than that of the electrode contacting layer. The optical cladding layer includes a first cladding portion which covers side walls of the ridge structure, and a second cladding portion which is disposed on a portion of the top surface of the ridge structure. A method for manufacturing the abovementioned laser diode is also disclosed.